公开(公告)号：US20150008871A1

公开(公告)日：2015-01-08

申请号：US14320999

申请日：2014-07-01

Applicant: STMicroelectronics Design and Application s.r.o.

Inventor： Sandor Petenyi

IPC: G05F1/625 ,  H02J7/00

CPC classification number: G05F1/625 ,  G05F1/569 ,  H02H7/1213 ,  H02J7/0072

Abstract: The reversal of the flow of output current in a voltage regulator is prevented by equipping the voltage regulator of a regulation transistor controlled by an analog voltage control, having its current terminals connected between the control terminal of the fifth transistor power of the regulator and the power supply line or the common ground node of the regulator. The regulation transistor is configured to provide an electrical path of conduction between the control terminal and the power supply line or the ground node and is controlled by an analog voltage control that varies in a continuous manner between a first level, suitable to extinguish the regulation transistor, and a second level suitable for biasing it in an operating condition of deep conduction, as the difference between the supply voltage and the regulated output voltage approaching an offset voltage.

Abstract translation: 通过装配由模拟电压控制器控制的调节晶体管的电压调节器来防止电压调节器中的输出电流的反转，其电流端子连接在调节器的第五晶体管功率的控制端和功率 供电线路或调节器的公共接地节点。 调节晶体管被配置为提供控制端与电源线或接地节点之间的导通电路，并且通过模拟电压控制来控制，该模拟电压控制以连续的方式在适于熄灭调节晶体管的第一电平之间变化 以及适于在深导通的操作条件下偏置它的第二电平，因为电源电压和调节的输出电压之间的差接近偏移电压。

公开(公告)号：US11082018B2

公开(公告)日：2021-08-03

申请号：US16786182

申请日：2020-02-10

Applicant: STMicroelectronics Design and Application S.R.O.

Inventor： Sandor Petenyi

IPC: H03F3/45 ,  H03F1/02 ,  H03F1/30

Abstract: A MOSFET has a current conduction path between source and drain terminals. A gate terminal of the MOSFET receives an input signal to facilitate current conduction in the current conduction path as a result of a gate-to-source voltage reaching a threshold voltage. A body terminal of the MOSFET is coupled to body voltage control circuitry that is sensitive to the voltage at the gate terminal of the MOSFET. The body voltage control circuitry responds to a reduction in the voltage at the gate terminal of the MOSFET by increasing the body voltage of the MOSFET at the body terminal of the MOSFET. As a result, there is reduction in the threshold voltage. The circuit configuration is applicable to amplifier circuits, comparator circuits and current mirror circuits.

公开(公告)号：US11005483B2

公开(公告)日：2021-05-11

申请号：US16987833

申请日：2020-08-07

Applicant: STMicroelectronics Design and Application S.R.O.

Inventor： Sandor Petenyi

IPC: H02M3/04 ,  H02M3/07 ,  G05F1/10 ,  G05F3/26 ,  H03L7/089 ,  H02M3/335 ,  G11C11/4074 ,  G11C5/14

Abstract: A circuit includes a current controlled oscillator (CCO), and a charge pump circuit boosting a supply voltage to produce a charge pump output voltage at a charge pump output node in response to output from the CCO. A current sensing circuit includes a first resistor coupled between the charge pump output node and an output node, a first transistor having a first conduction terminal coupled to the charge pump output node through a second resistor, and a second conduction terminal coupled to an input of the CCO. A second transistor has a first conduction terminal coupled to the output node, a second conduction terminal coupled to a reference current source, and a control terminal coupled to the control terminal of the first transistor and to the second conduction terminal of the second transistor.

公开(公告)号：US09742270B2

公开(公告)日：2017-08-22

申请号：US14986425

申请日：2015-12-31

Applicant: STMicroelectronics Design and Application S.R.O.

Inventor： Sandor Petenyi

IPC: H02M3/156 ,  H02M1/44 ,  G05F1/625

CPC classification number: G05F1/625

Abstract: A voltage regulator is controlled to improve supply voltage rejection by cancelling an alternating component of a supply voltage signal that is capacitively coupled to a high-impedance node within the voltage regulator. This cancellation is done by capacitively coupling an inverted version of the alternating component to the high-impedance node to thereby substantially cancel the alternating component present on the high-impedance node. The high-impedance node may be a high-impedance voltage reference node of the voltage regulator.

公开(公告)号：US20170220058A1

公开(公告)日：2017-08-03

申请号：US15014320

申请日：2016-02-03

Applicant: STMicroelectronics Design and Application S.R.O. ,  STMicroelectronics S.r.l.

Inventor： Sandor Petenyi ,  Calogero Ribellino

IPC: G05F1/575

CPC classification number: G05F1/575

Abstract: A significant reduction of the amplitude of the transient response is obtained by keeping a low dropout regulator circuit in a closed loop condition. This is achieved by manipulation of the reference voltage level when an open loop condition arises due to a falling input voltage. In this case, the reference voltage level is tracked with the input voltage level, keeping the output voltage regulated. As a consequence, the power pass element of the regulator is not forced into the linear region (in the case of a MOSFET) or deep saturation (in the case of a bipolar transistor).