公开(公告)号：US10199413B2

公开(公告)日：2019-02-05

申请号：US15839292

申请日：2017-12-12

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Axel Crocherie ,  Jean-Pierre Oddou ,  Stéphane Allegret-Maret ,  Hugues Leininger

IPC: H01L31/0232 ,  H01L27/146

Abstract: A color image sensor including an array of pixels is formed in a semiconductor layer having a back side that receives an illumination. Insulated conductive walls penetrate into the semiconductor layer from the back side and separate the pixels from one another. For each pixel, a color pixel penetrates into from 5 to 30% of a thickness of the semiconductor layer from the back side and occupies at least 90% of the surface area delimited by the walls. An electrically-conductive layer extends from the lateral wall of the filter all the way to the walls.

公开(公告)号：US20180158861A1

公开(公告)日：2018-06-07

申请号：US15866995

申请日：2018-01-10

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sebastien Lagrasta ,  Delia Ristoiu ,  Jean-Pierre Oddou ,  Cécile Jenny

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14654 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor substrate includes a photodiode region, a charge storage region electrically coupled to the photodiode region and a capacitive deep trench isolation (CDTI) structure including a conductive region positioned between the photodiode region and the charge storage region. A contact etch stop layer overlies the semiconductor substrate and a premetallization dielectric layer overlies the contact etch stop layer. A first trench, filled with a metal material, extends through the premetallization dielectric layer and bottoms out at or in the contact etch stop layer. A second trench, also filled with the metal material, extends through the premetallization dielectric layer and the contact etch stop layer and bottoms out at or in the conductive region of the CDTI structure. The metal filled first trench forms an optical shield between the photodiode region and the charge storage region. The metal filled second trench forms a contact for biasing the CDTI structure.

公开(公告)号：US09917126B1

公开(公告)日：2018-03-13

申请号：US15263922

申请日：2016-09-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sebastien Lagrasta ,  Delia Ristoiu ,  Jean-Pierre Oddou ,  Cécile Jenny

IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14654 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor substrate includes a photodiode region, a charge storage region electrically coupled to the photodiode region and a capacitive deep trench isolation (CDTI) structure including a conductive region positioned between the photodiode region and the charge storage region. A contact etch stop layer overlies the semiconductor substrate and a premetallization dielectric layer overlies the contact etch stop layer. A first trench, filled with a metal material, extends through the premetallization dielectric layer and bottoms out at or in the contact etch stop layer. A second trench, also filled with the metal material, extends through the premetallization dielectric layer and the contact etch stop layer and bottoms out at or in the conductive region of the CDTI structure. The metal filled first trench forms an optical shield between the photodiode region and the charge storage region. The metal filled second trench forms a contact for biasing the CDTI structure.

公开(公告)号：US09859319B2

公开(公告)日：2018-01-02

申请号：US14923799

申请日：2015-10-27

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Axel Crocherie ,  Jean-Pierre Oddou ,  Stéphane Allegret-Maret ,  Hugues Leininger

IPC: H01L31/0232 ,  H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14607 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685

Abstract: A color image sensor including an array of pixels is formed in a semiconductor layer having a back side that receives an illumination. Insulated conductive walls penetrate into the semiconductor layer from the back side and separate the pixels from one another. For each pixel, a color pixel penetrates into from 5 to 30% of a thickness of the semiconductor layer from the back side and occupies at least 90% of the surface area delimited by the walls. An electrically-conductive layer extends from the lateral wall of the filter all the way to the walls.

公开(公告)号：US20160099278A1

公开(公告)日：2016-04-07

申请号：US14847391

申请日：2015-09-08

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Guyader ,  Jean-Pierre Oddou ,  Stephane Allegret-Maret ,  Mickael Gros-Jean

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1203 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464

Abstract: A back-illuminated integrated imaging device is formed from a semiconductor substrate including a zone of pixels bounded by capacitive deep trench isolations. A peripheral zone is located outside the zone of pixels. A continuous electrically conductive layer forms, in the zone of pixels, an electrode in a trench for each capacitive deep trench isolation, and forms, in the peripheral zone, a redistribution layer for electrically coupling the electrode to a biasing contact pad. The electrode is located in the trench between a trench dielectric and at least one material for filling the trench.

Abstract translation: 背照式集成成像装置由包括由电容深沟槽隔离限制的像素区域的半导体衬底形成。 外围区域位于像素区域之外。 连续导电层在像素区域中形成用于每个电容深沟槽隔离的沟槽中的电极，并且在周边区域中形成用于将电极电耦合到偏置接触焊盘的再分布层。 电极位于沟槽电介质和用于填充沟槽的至少一种材料之间的沟槽中。