Display device and method of manufacturing display device

    公开(公告)号:US12256616B2

    公开(公告)日:2025-03-18

    申请号:US18441694

    申请日:2024-02-14

    Abstract: A display device includes an active layer in a display area, a first gate insulation layer on the active layer, a first gate line on the first gate insulation layer in the display area, a first signal line in the same layer as the first gate line in a non-display area and including the same material as that of the first gate line including molybdenum, a second gate insulation layer on the first gate line and the first signal line, a second gate line on the second gate insulation layer in the display area, and a second signal line in the same layer as the second gate line in the non-display area and including the same material as that of the second gate line including aluminum or an aluminum alloy. A width of the first signal line is greater than a width of the second signal line.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240179998A1

    公开(公告)日:2024-05-30

    申请号:US18517168

    申请日:2023-11-22

    CPC classification number: H10K59/80517 H10K59/1201

    Abstract: A display device includes a substrate, a pixel circuit layer disposed on the substrate and including at least one thin film transistor, and a pixel electrode disposed on the pixel circuit layer and electrically connected to the at least one thin film transistor, wherein the pixel electrode includes a lower layer including aluminum, an intermediate layer disposed on the lower layer and including a tungsten oxide, and an upper layer disposed on the intermediate layer and including a transparent conductive oxide.

    Display apparatus with electrodes having lowered resistance

    公开(公告)号:US11538881B2

    公开(公告)日:2022-12-27

    申请号:US17029843

    申请日:2020-09-23

    Abstract: A display apparatus includes a thin film transistor on the substrate, the thin film transistor including a first semiconductor layer and a first gate electrode overlapping the first semiconductor layer wherein a first gate insulating layer is disposed between the first semiconductor layer and the first gate electrode, and a storage capacitor including a lower electrode including a first lower layer and a first upper layer stacked each other and an upper electrode including a second lower layer and a second upper layer stacked each other, wherein the upper electrode overlaps the lower electrode, and a second gate insulating layer is disposed between the upper electrode and the lower electrode, a display element electrically connected to the thin film transistor, wherein the second upper layer has a thickness greater than a thickness of the first upper layer.

Patent Agency Ranking