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公开(公告)号:US11101298B2
公开(公告)日:2021-08-24
申请号:US16884182
申请日:2020-05-27
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Jinwoo Lee , Waljun Kim , Kiwan Ahn , Yongjae Jang , Jaehyuk Jang , Yugwang Jeong
IPC: H01L27/12 , H01L29/423 , G09G3/3266 , G09G3/3275 , H01L29/417 , G09G3/3233 , H01L29/786 , H01L27/32
Abstract: A thin film transistor array substrate includes: a first conductive layer including first lines for transmitting data signals to the thin film transistors; a second conductive layer disposed on the first conductive layer and including second lines for supplying a driving voltage to the thin film transistors; a first insulating layer disposed between a semiconductor layer and the first conductive layer and including a first material layer; a second insulating layer disposed between the first conductive layer and the second conductive layer and including a second material layer having a dielectric constant greater than that of the first material layer; and a contact plug penetrating the second insulating layer and the first insulating layer, and connecting the second conductive layer to the semiconductor layer. A taper angle of the contact plug in the second material layer is greater than that of the contact plug in the first material layer.
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公开(公告)号:US20190189941A1
公开(公告)日:2019-06-20
申请号:US16220033
申请日:2018-12-14
Applicant: Samsung Display Co., Ltd.
Inventor: Jintaek Kim , Kiwan Ahn , Jinwoo Lee , Donghyun Kim , Pilsuk Lee
CPC classification number: H01L51/0537 , H01L27/1214 , H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L27/3265 , H01L27/3276 , H01L51/5218 , H01L51/5234 , H01L51/56
Abstract: A display apparatus includes a plurality of pixels each including a substrate on which are disposed: an interlayer insulating layer; a driving thin film transistor in which a driving semiconductor layer and a driving gate electrode are each disposed between the substrate and the first interlayer insulating layer; a first capacitor in which a first electrode, a first dielectric pattern and a second electrode are sequentially stacked, the first electrode being connected to the driving gate electrode; and a plurality of contact plugs extended through a thickness of the interlayer insulating layer, with which the driving thin film transistor and the first capacitor are respectively connected to electrodes outside thereof. Lateral surfaces of the first dielectric pattern are covered by the interlayer insulating layer, and the first dielectric pattern within the first capacitor is disposed spaced apart from each of the contact plugs.
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