Organic light-emitting display apparatus

    公开(公告)号:US11877477B2

    公开(公告)日:2024-01-16

    申请号:US17358087

    申请日:2021-06-25

    CPC classification number: H10K59/122 H10K59/126 H10K59/1213 H10K59/353

    Abstract: Provided is an organic light-emitting display apparatus in which a dead space may be reduced. The organic light-emitting display apparatus includes: a substrate including a first display area, a second display area disposed outside of the first display area, and a third display area disposed outside of the second display area; a first thin-film transistor disposed in the first display area on the substrate; a second thin-film transistor and a third thin-film transistor each arranged in the second display area on the substrate; a first pixel electrode arranged in the first display area on the substrate and electrically connected to the first thin-film transistor; a second pixel electrode arranged in the second display area on the substrate and electrically connected to the second thin-film transistor; and a third pixel electrode arranged in the third display area on the substrate and electrically connected to the third thin-film transistor.

    DISPLAY DEVICE
    14.
    发明申请
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20190267573A1

    公开(公告)日:2019-08-29

    申请号:US16286039

    申请日:2019-02-26

    Abstract: A display device which is solid against an external impact is provided. The display device includes: a substrate; a thin film transistor arranged over the substrate; a first organic insulating layer arranged over the thin film transistor; and a first crack induction layer located inside the first organic insulating layer. The first crack induction layer may include an inorganic insulating material and may not overlap the thin film transistor as viewed from a direction perpendicular to the substrate.

    DISPLAY APPARATUS
    16.
    发明申请
    DISPLAY APPARATUS 有权
    显示设备

    公开(公告)号:US20170025637A1

    公开(公告)日:2017-01-26

    申请号:US15150246

    申请日:2016-05-09

    Abstract: A display apparatus capable of preventing (or protecting from) permeation of moisture. The apparatus includes a substrate comprising a display area and a peripheral area surrounding the display area; a pad unit located on the peripheral area; an organic insulating layer covering the display area and a part of the peripheral area adjacent to the display area; and an inorganic insulating layer that covers at least a first area when the first area is a part between the organic insulating layer and the pad unit.

    Abstract translation: 能够防止(或防止)水分渗透的显示装置。 该装置包括:基板,包括显示区域和围绕显示区域的外围区域; 位于周边区域上的垫单元; 覆盖所述显示区域和与所述显示区域相邻的所述周边区域的一部分的有机绝缘层; 以及当所述第一区域是所述有机绝缘层和所述垫单元之间的部分时,至少覆盖第一区域的无机绝缘层。

    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240324316A1

    公开(公告)日:2024-09-26

    申请号:US18613363

    申请日:2024-03-22

    CPC classification number: H10K59/122 H10K59/1201 G09G3/3233 G09G2300/0842

    Abstract: A display apparatus includes a first pixel disposed on a substrate and including a first pixel electrode, a first emission layer disposed on the first pixel electrode, and a first opposite electrode disposed on the first emission layer, a second pixel disposed on the substrate and including a second pixel electrode, a second emission layer disposed on the second pixel electrode, and a second opposite electrode disposed on the second emission layer, a pixel defining layer disposed on the first pixel electrode and the second pixel electrode and including an opening, the opening exposing each of at least a portion of the first pixel electrode and at least a portion of the second pixel electrode, a trench formed in the pixel defining layer, and a connection electrode electrically connecting the first opposite electrode to the second opposite electrode.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240321895A1

    公开(公告)日:2024-09-26

    申请号:US18528823

    申请日:2023-12-05

    Abstract: A display device includes a substrate, a first oxide semiconductor layer on the substrate, a first gate insulating layer on the substrate and covering an upper surface of the first oxide semiconductor layer, a second oxide semiconductor layer on the first gate insulating layer, and a second gate insulating layer covering an upper surface of the second oxide semiconductor layer. The first oxide semiconductor layer includes a channel region between a source region and a drain region The second oxide semiconductor layer includes a channel region between a source region and a drain region. A difference between a thickness of the first gate insulating layer and a thickness of the second gate insulating layer is 500 Å or less.

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