Abstract:
A method of fabricating a display apparatus includes providing a substrate having a first thin film transistor region and a second thin film transistor region; forming a first oxide semiconductor layer on the substrate; forming a first gate insulating layer covering the first oxide semiconductor layer; forming a second oxide semiconductor layer on the substrate; forming a second gate insulating layer on the substrate; forming a first gate electrode in the first thin film transistor region and forming a second gate electrode in the second thin film transistor region, over the second gate insulating layer; and forming a first gate electrode stack and a second gate electrode stack by etching the first gate insulating layer and etching the second gate insulating layer by using the first gate electrode and the second gate electrode as etching masks.
Abstract:
A display apparatus includes: a substrate including a display area and a peripheral area around the display area, the substrate having a bent portion; a plurality of display elements in the display area; and a thin film encapsulation layer over the plurality of display elements and including a first encapsulation layer, a second encapsulation layer over the first encapsulation layer, and an organic encapsulation layer between the first encapsulation layer and the second encapsulation layer, wherein the second encapsulation layer includes a plurality of inorganic thin layers and a plurality of organic thin layers alternately arranged, and a thickness of the second encapsulation layer is equal to or less than a thickness of the first encapsulation layer.
Abstract:
Provided is an organic light-emitting display apparatus in which a dead space may be reduced. The organic light-emitting display apparatus includes: a substrate including a first display area, a second display area disposed outside of the first display area, and a third display area disposed outside of the second display area; a first thin-film transistor disposed in the first display area on the substrate; a second thin-film transistor and a third thin-film transistor each arranged in the second display area on the substrate; a first pixel electrode arranged in the first display area on the substrate and electrically connected to the first thin-film transistor; a second pixel electrode arranged in the second display area on the substrate and electrically connected to the second thin-film transistor; and a third pixel electrode arranged in the third display area on the substrate and electrically connected to the third thin-film transistor.
Abstract:
A display device which is solid against an external impact is provided. The display device includes: a substrate; a thin film transistor arranged over the substrate; a first organic insulating layer arranged over the thin film transistor; and a first crack induction layer located inside the first organic insulating layer. The first crack induction layer may include an inorganic insulating material and may not overlap the thin film transistor as viewed from a direction perpendicular to the substrate.
Abstract:
Provided are a compound of Formula 1 and an organic electric element including a first electrode, a second electrode, and an organic material layer between the first and the second electrodes, where the organic material layer contains the compound of Formula 1 and improves luminous efficiency, stability, and life span of the element.
Abstract:
A display apparatus capable of preventing (or protecting from) permeation of moisture. The apparatus includes a substrate comprising a display area and a peripheral area surrounding the display area; a pad unit located on the peripheral area; an organic insulating layer covering the display area and a part of the peripheral area adjacent to the display area; and an inorganic insulating layer that covers at least a first area when the first area is a part between the organic insulating layer and the pad unit.
Abstract:
Disclosed is a compound represented by Formula 1, an organic electric element comprising a first electrode, a second electrode, and an organic material layer between the first electrode and the second electrode, and an electronic device comprising the organic electric element, wherein the organic material layer comprises the compound of Formula 1 to reduce driving voltage and improve luminous efficiency, and life span.
Abstract:
A compound represented by Formula 1. An organic electric element includes a first electrode, a second electrode, and an organic material layer between the first electrode and the second electrode. The organic material layer includes the compound. When the organic electric element includes the compound in an organic material layer, luminous efficiency, stability, and life span can be improved.
Abstract:
A display apparatus includes a first pixel disposed on a substrate and including a first pixel electrode, a first emission layer disposed on the first pixel electrode, and a first opposite electrode disposed on the first emission layer, a second pixel disposed on the substrate and including a second pixel electrode, a second emission layer disposed on the second pixel electrode, and a second opposite electrode disposed on the second emission layer, a pixel defining layer disposed on the first pixel electrode and the second pixel electrode and including an opening, the opening exposing each of at least a portion of the first pixel electrode and at least a portion of the second pixel electrode, a trench formed in the pixel defining layer, and a connection electrode electrically connecting the first opposite electrode to the second opposite electrode.
Abstract:
A display device includes a substrate, a first oxide semiconductor layer on the substrate, a first gate insulating layer on the substrate and covering an upper surface of the first oxide semiconductor layer, a second oxide semiconductor layer on the first gate insulating layer, and a second gate insulating layer covering an upper surface of the second oxide semiconductor layer. The first oxide semiconductor layer includes a channel region between a source region and a drain region The second oxide semiconductor layer includes a channel region between a source region and a drain region. A difference between a thickness of the first gate insulating layer and a thickness of the second gate insulating layer is 500 Å or less.