公开(公告)号：US11670657B2

公开(公告)日：2023-06-06

申请号：US17003224

申请日：2020-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Hwan Jeon ,  Doo Won Kwon ,  Chan Ho Park ,  Kyung Rae Byun ,  Dong-Chul Lee ,  Chong Kwang Chang

IPC: H01L27/146 ,  H04N23/10

CPC classification number: H01L27/14621 ,  H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14685 ,  H04N23/10

Abstract: An image sensor includes; a photoelectric conversion element disposed on a substrate, a fence structure disposed on the substrate and including a low refractive index layer stacked on a barrier layer, wherein the barrier layer includes at least one metal, and a color filter disposed inwardly lateral with respect to a sidewall of the fence structure, wherein the barrier layer includes an inward lateral protrusion.

公开(公告)号：US11482564B2

公开(公告)日：2022-10-25

申请号：US16941958

申请日：2020-07-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Yoon ,  Doo Won Kwon ,  Kwan Sik Kim ,  In Gyu Baek ,  Tae Young Song

IPC: H01L27/32 ,  H01L27/146 ,  H01L21/56 ,  H01L21/683 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L31/18 ,  H01L23/00

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.

公开(公告)号：US20210057478A1

公开(公告)日：2021-02-25

申请号：US16826455

申请日：2020-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Min Lee ,  Doo Won Kwon ,  Seok Jin Kwon ,  Kyoung Won Na ,  In Gyu Baek

IPC: H01L27/146

Abstract: An image sensor includes a substrate, first and second insulating structures, a first wiring structure, a through via, and first and second connection patterns. The substrate includes a sensor array region and a pad region. The first insulating structure is disposed on a second surface of the substrate. The first wiring structure is formed in the first insulating structure and includes first conductive layers and first vias. The through via passes through the substrate in the pad region and connects to the first wiring structure. The first connection pattern is connected to the first wiring structure. The second insulating structure is disposed on a fourth surface of the first insulating structure. The second connection pattern is connected to the first connection pattern. The first conductive layers include a first wiring, and a second wiring spaced farther from the substrate than the first wiring. The through via contacts the second wiring.

公开(公告)号：US10741607B2

公开(公告)日：2020-08-11

申请号：US15968954

申请日：2018-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Yoon ,  Doo Won Kwon ,  Kwan Sik Kim ,  In Gyu Baek ,  Tae Young Song

IPC: H01L27/32 ,  H01L27/146 ,  H01L21/56 ,  H01L21/683 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L31/18 ,  H01L23/00

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.

公开(公告)号：US20180069046A1

公开(公告)日：2018-03-08

申请号：US15450451

申请日：2017-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Gu JIN ,  Doo Won Kwon

IPC: H01L27/146 ,  H04N5/33 ,  H04N9/04

CPC classification number: H01L27/14647 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14652 ,  H04N5/332 ,  H04N9/04

Abstract: A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.