公开(公告)号：US20200234966A1

公开(公告)日：2020-07-23

申请号：US16540726

申请日：2019-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chong Kwang Chang ,  Dong Hoon KHANG ,  Sug Hyun SUNG ,  Min Hwan JEON

IPC: H01L21/308 ,  H01L21/8234 ,  H01L29/66

Abstract: A method of fabricating a semiconductor device is provided. The method includes: forming mask patterns on a substrate, the mask patterns including a first mask fin pattern, a second mask fin pattern and a dummy mask pattern between the first mask fin pattern and the second mask fin pattern; forming a first fin pattern, a second fin pattern and a dummy fin pattern by etching the substrate using the mask patterns; and removing the dummy fin pattern, wherein the dummy mask pattern is wider than each of the first mask fin pattern and the second mask fin pattern.

公开(公告)号：US12074031B2

公开(公告)日：2024-08-27

申请号：US17303062

申请日：2021-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chong Kwang Chang ,  Dong Hoon Khang ,  Sug Hyun Sung ,  Min Hwan Jeon

IPC: H01L21/308 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L21/3086 ,  H01L21/823431 ,  H01L21/823468 ,  H01L29/6681

Abstract: A method of fabricating a semiconductor device is provided. The method includes: forming mask patterns on a substrate, the mask patterns including a first mask fin pattern, a second mask fin pattern and a dummy mask pattern between the first mask fin pattern and the second mask fin pattern; forming a first fin pattern, a second fin pattern and a dummy fin pattern by etching the substrate using the mask patterns; and removing the dummy fin pattern, wherein the dummy mask pattern is wider than each of the first mask fin pattern and the second mask fin pattern.

公开(公告)号：US11024509B2

公开(公告)日：2021-06-01

申请号：US16540726

申请日：2019-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chong Kwang Chang ,  Dong Hoon Khang ,  Sug Hyun Sung ,  Min Hwan Jeon

IPC: H01L21/8234 ,  H01L21/308 ,  H01L29/66

Abstract: A method of fabricating a semiconductor device is provided. The method includes: forming mask patterns on a substrate, the mask patterns including a first mask fin pattern, a second mask fin pattern and a dummy mask pattern between the first mask fin pattern and the second mask fin pattern; forming a first fin pattern, a second fin pattern and a dummy fin pattern by etching the substrate using the mask patterns; and removing the dummy fin pattern, wherein the dummy mask pattern is wider than each of the first mask fin pattern and the second mask fin pattern.

公开(公告)号：US11670657B2

公开(公告)日：2023-06-06

申请号：US17003224

申请日：2020-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Hwan Jeon ,  Doo Won Kwon ,  Chan Ho Park ,  Kyung Rae Byun ,  Dong-Chul Lee ,  Chong Kwang Chang

IPC: H01L27/146 ,  H04N23/10

CPC classification number: H01L27/14621 ,  H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14685 ,  H04N23/10

Abstract: An image sensor includes; a photoelectric conversion element disposed on a substrate, a fence structure disposed on the substrate and including a low refractive index layer stacked on a barrier layer, wherein the barrier layer includes at least one metal, and a color filter disposed inwardly lateral with respect to a sidewall of the fence structure, wherein the barrier layer includes an inward lateral protrusion.

公开(公告)号：US20210272815A1

公开(公告)日：2021-09-02

申请号：US17303062

申请日：2021-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chong Kwang Chang ,  Dong Hoon Khang ,  Sug Hyun Sung ,  Min Hwan Jeon

IPC: H01L21/308 ,  H01L21/8234 ,  H01L29/66

Abstract: A method of fabricating a semiconductor device is provided. The method includes: forming mask patterns on a substrate, the mask patterns including a first mask fin pattern, a second mask fin pattern and a dummy mask pattern between the first mask fin pattern and the second mask fin pattern; forming a first fin pattern, a second fin pattern and a dummy fin pattern by etching the substrate using the mask patterns; and removing the dummy fin pattern, wherein the dummy mask pattern is wider than each of the first mask fin pattern and the second mask fin pattern.