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公开(公告)号:US20220068863A1
公开(公告)日:2022-03-03
申请号:US17500079
申请日:2021-10-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: JISEOK HONG , HYUEKJAE LEE , JONGPA HONG , JIHWAN HWANG , TAEHUN KIM
IPC: H01L23/00 , H01L23/48 , H01L25/065
Abstract: A semiconductor package includes a first semiconductor chip having a through-electrode and an upper connection pad on an upper surface of the first semiconductor chip that is connected to the through-electrode; a second semiconductor chip stacked on the first semiconductor chip, and having a lower connection pad on a lower surface of the second semiconductor chip; a non- conductive film between the first semiconductor chip and the second semiconductor chip, with the non-conductive film including voids having an average diameter of 1μm to 100 um, the voids having a volume fraction of 0.1 to 5 vol %; and a connection conductor that penetrates the non- conductive film and connects the upper connection pad and the lower connection pad.
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公开(公告)号:US20210125955A1
公开(公告)日:2021-04-29
申请号:US16992895
申请日:2020-08-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: JIHWAN SUH , UN-BYOUNG KANG , TAEHUN KIM , HYUEKJAE LEE , JIHWAN HWANG , SANG CHEON PARK
IPC: H01L23/00 , H01L25/065 , H01L25/18
Abstract: A semiconductor package includes a substrate, a first semiconductor chip disposed on the substrate, and a second semiconductor chip disposed on a top surface of the first semiconductor chip. The first semiconductor chip includes a conductive pattern disposed on the top surface of the first semiconductor chip and a first protective layer covering the top surface of the first semiconductor chip and at least partially surrounds the conductive pattern. The second semiconductor chip includes a first pad that contacts a first through electrode on a bottom surface of the second semiconductor chip. A second protective layer surrounds the first pad and covers the bottom surface of the second semiconductor chip. A third protection layer fills a first recess defined in the second protective layer to face the inside of the second protective layer. The first protective layer and the third protective layer contact each other.
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