公开(公告)号：US10374699B2

公开(公告)日：2019-08-06

申请号：US15889449

申请日：2018-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho-Chul Ji ,  Keun Yeong Cho

IPC: H04Q11/00 ,  H04B10/032

Abstract: A photonic integrated circuit includes a main light source, a redundant light source, a controller, an optical switch, and a modulator. The main light source outputs main light through a main light input waveguide. The redundant light source outputs redundant light through a redundant light transmission waveguide. The controller generates a first switch signal based on a fault state of the main light source. The optical switch selectively provides the redundant light from the redundant light transmission waveguide to a redundant light input waveguide based on the first switch signal. The modulator modulates main light from the main light input waveguide or redundant light from the redundant light input waveguide and outputs a first optical signal.

公开(公告)号：US20130092980A1

公开(公告)日：2013-04-18

申请号：US13650947

申请日：2012-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoung Won Na ,  Pil-Kyu Kang ,  Seong Gu Kim ,  Yong Hwack Shin ,  Ho-Chul Ji ,  Jung Hyung Pyo ,  Kyoung Ho Ha

IPC: H01L31/0352

CPC classification number: H01L31/02327 ,  G02B6/12004 ,  G02B6/132 ,  G02B6/136 ,  G02B6/30 ,  G02B6/305 ,  H01L31/103 ,  H01L31/1804 ,  H01L31/1808 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photodetector structure can include a silicon substrate and a silicon layer on the silicon substrate, that can include a first portion of an optical transmission medium that further includes a silicon cross-sectional transmission face. A germanium layer can be on the silicon substrate and can include a second portion of the optical transmission medium, adjacent to the first portion can include a germanium cross-sectional transmission face butt-coupled to the silicon cross-sectional transmission face.

Abstract translation: 光电检测器结构可以包括硅衬底和硅衬底上的硅层，其可以包括进一步包括硅横截面透射面的光传输介质的第一部分。 锗层可以在硅衬底上，并且可以包括光传输介质的第二部分，邻近第一部分可以包括与硅横截面透射面对接的锗横截面透射面。