公开(公告)号：US20140097404A1

公开(公告)日：2014-04-10

申请号：US13943006

申请日：2013-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： David SEO ,  Ho-jung KIM ,  Hyun-jong CHUNG ,  Seong-jun PARK ,  Kyung-eun BYUN ,  Hyun-jae SONG ,  Jin-seong HEO

IPC: H01L29/16

CPC classification number: H01L29/1606 ,  H01L29/407 ,  H01L29/66977 ,  H01L29/772 ,  H01L29/872 ,  H01L29/88

Abstract: A memory device includes a graphene switching device having a source electrode, a drain electrode and a gate electrode. The graphene switching device includes a Schottky barrier formed between the drain electrode and a channel in a direction from the source electrode toward the drain electrode. The memory device need not include additional storage element.

Abstract translation: 存储器件包括具有源电极，漏电极和栅电极的石墨烯开关器件。 石墨烯开关装置包括形成在漏电极和沟道之间的从源电极朝向漏电极的方向上的肖特基势垒。 存储器件不需要包括额外的存储元件。

公开(公告)号：US20140097403A1

公开(公告)日：2014-04-10

申请号：US13906657

申请日：2013-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong HEO ,  Seong-jun PARK ,  Kyung-eun BYUN ,  David SEO ,  Hyun-jae SONG ,  Jae-ho LEE ,  Hyun-jong CHUNG

IPC: H01L29/16 ,  H01L29/78

CPC classification number: H01L29/16 ,  B82Y99/00 ,  H01L29/0895 ,  H01L29/1606 ,  H01L29/7391 ,  H01L29/78 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696

Abstract: According to example embodiments, a tunneling field-effect transistor (TFET) includes a first electrode on a substrate, a semiconductor layer on a portion of the first electrode, a graphene channel on the semiconductor layer, a second electrode on the graphene channel, a gate insulating layer on the graphene channel, and a gate electrode on the gate insulating layer. The first electrode may include a portion that is adjacent to the first area of the substrate. The semiconductor layer may be between the graphene channel and the portion of the first electrode. The graphene channel may extend beyond an edge of at least one of the semiconductor layer and the portion of the first electrode to over the first area of the substrate.

Abstract translation: 根据示例性实施例，隧道场效应晶体管（TFET）包括衬底上的第一电极，第一电极的一部分上的半导体层，半导体层上的石墨烯通道，石墨烯通道上的第二电极， 栅极绝缘层，栅极绝缘层上的栅电极。 第一电极可以包括与衬底的第一区域相邻的部分。 半导体层可以在石墨烯通道和第一电极的部分之间。 石墨烯通道可以延伸超过半导体层和第一电极的至少一个的边缘到衬底的第一区域之上。

公开(公告)号：US20130098540A1

公开(公告)日：2013-04-25

申请号：US13659131

申请日：2012-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joo-ho LEE ,  Chang-seung LEE ,  Yong-sung KIM ,  Hyun-jae SONG

IPC: B32B3/14 ,  B32B15/04 ,  B32B37/02 ,  B32B9/04

CPC classification number: H01L29/78603 ,  H01L29/1606 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/7781 ,  H01L29/78684 ,  Y10T428/24917

Abstract: Graphene transferring members, graphene transferrer, methods of transferring graphene, and methods of fabricating a graphene device, may include a metal thin-film layer pattern and a graphene layer sequentially stacked on an adhesive member. The metal thin-film layer and the graphene layer may have the same shape. After transferring the graphene layer onto a transfer-target substrate during the fabrication of a graphene device, the metal thin-film layer is patterned to form electrodes on respective ends of the graphene layer by removing a portion of the metal thin-film layer.

Abstract translation: 石墨烯转移剂，石墨烯转移剂，转移石墨烯的方法和制造石墨烯装置的方法可以包括金属薄膜层图案和依次层叠在粘合剂构件上的石墨烯层。 金属薄膜层和石墨烯层可以具有相同的形状。 在制造石墨烯装置期间将石墨烯层转印到转印对象基板上之后，通过去除金属薄膜层的一部分，对金属薄膜层进行图案化以在石墨烯层的各个端部上形成电极。