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公开(公告)号：US10163518B2
公开(公告)日：2018-12-25
申请号：US15716404
申请日：2017-09-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyun-jun Yoon , Il-han Park , Na-young Choi , Seung-hwan Song
Abstract: Provided is a read method for a nonvolatile memory device for reading data with an optimum read voltage. The read method includes reading data of a first set of memory cells connected to a first word line, by dividing the data of the first set of memory cells into M pages and individually reading data from the M pages. The reading data includes performing an on-chip valley search (OVS) operation on a first valley of two adjacent threshold voltage distributions of the first set of memory cells when reading each of the M pages, and performing a data recover read operation via a read operation on a second word line adjacent to the first word line, based on a result of the OVS operation. In the data recover read operation, a read operation on the first word line is not performed.
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公开(公告)号：US10700079B2
公开(公告)日：2020-06-30
申请号：US16193007
申请日：2018-11-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： June-hong Park , Bong-soon Lim , Il-han Park
IPC: H01L27/11556 , H01L27/06 , H01L23/535 , H01L21/8234 , G11C16/04 , H01L27/11582 , H01L27/11531 , H01L27/11573 , H01L27/112
Abstract: A nonvolatile memory device and a method of manufacturing the device, the device including a first semiconductor layer, the first semiconductor layer including an upper substrate, and a memory cell array, the memory cell array including a plurality of gate conductive layers stacked on the upper substrate and a plurality of pillars passing through the plurality of gate conductive layers and extending in a direction perpendicular to a top surface of the upper substrate; and a second semiconductor layer under the first semiconductor layer, the second semiconductor layer including a lower substrate, at least one contact plug between the lower substrate and the upper substrate, and a common source line driver on the lower substrate and configured to output a common source voltage for the plurality of pillars through the at least one contact plug.
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公开(公告)号：US10366769B2
公开(公告)日：2019-07-30
申请号：US15810741
申请日：2017-11-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yong-sung Cho , Il-han Park , Jung-yun Yun , Youn-ho Hong
Abstract: Provided is a programming method of a nonvolatile memory device, the method comprising the steps of a first programming loop including applying a first verifying voltage to word lines of a plurality of first memory cells for being programmed in a first programming state of a first target threshold voltage and detecting, from among the plurality of first memory cells, a first slow memory cell whose threshold voltage is less than the first verifying voltage, a second programming loop including applying a first program pulse to the first memory cells and applying a second program pulse to the first slow memory cell, a voltage level of the second program pulse of the second program loop being greater than a voltage level of the first program pulse of the second program loop, and a third programming loop.
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公开(公告)号：US10163513B2
公开(公告)日：2018-12-25
申请号：US15425315
申请日：2017-02-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Il-han Park , Seung-jae Lee
Abstract: A program method of a memory device include determining whether valid data is stored in memory cells of a word line adjacent to a selection word line upon which a program operation is to be performed; when the valid data is not stored in the memory cells of the word line adjacent to the selection word line, performing, based on data to be written to the selection word line, a pre-program operation on the word line adjacent to the selection word line; and after the performing of the pre-program operation, performing, based on a program command, the program operation on the selection word line.
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