公开(公告)号：US20170092578A1

公开(公告)日：2017-03-30

申请号：US15375567

申请日：2016-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongmin BAEK ,  Sangho RHA ,  Sanghoon AHN ,  Wookyung YOU ,  Naein LEE

IPC: H01L23/528 ,  H01L23/532

CPC classification number: H01L23/528 ,  H01L21/7682 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices are provided. A semiconductor device includes gaps between conductive patterns. Moreover, the semiconductor device includes a permeable layer on the conductive patterns. Methods of fabricating semiconductor devices are also provided.

公开(公告)号：US20140225251A1

公开(公告)日：2014-08-14

申请号：US14134043

申请日：2013-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang-Hee LEE ,  Jongmin BAEK ,  Kyu-Hee HAN ,  Gilheyun CHOI ,  Jongwon HONG

IPC: H01L23/28 ,  H01L23/48

CPC classification number: H01L23/4821 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/28 ,  H01L23/48 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/0001

Abstract: Semiconductor devices, and methods of fabricating the same, include first conductive lines on a substrate, and a first molding layer covering the first conductive lines. The first conductive lines have air gaps between adjacent first conductive lines. Sidewalls of the first conductive lines and a bottom surface of the first molding layer collectively define a first gap region of each of the air gaps. The sidewalls of the first conductive lines and a top surface of the first molding layer collectively define a second air gap region of each of the air gaps.

Abstract translation: 半导体器件及其制造方法包括在基板上的第一导线和覆盖第一导线的第一成型层。 第一导线在相邻的第一导线之间具有气隙。 第一导电线的侧壁和第一模制层的底表面共同限定每个气隙的第一间隙区域。 第一导电线的侧壁和第一模制层的顶表面共同限定每个气隙的第二气隙区域。