公开(公告)号：US20220190266A1

公开(公告)日：2022-06-16

申请号：US17675387

申请日：2022-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Young KIM ,  Byong Gwon SONG ,  Jeong Il PARK ,  Jiyoung JUNG

IPC: H01L51/05 ,  H01L27/28 ,  H01L51/00 ,  H01L51/10 ,  H01L29/423

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer overlapped with the gate electrode, a gate insulating layer between the gate electrode and the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a plurality of holes. The gate insulating layer may include a plurality of recess portions at a surface of the gate insulating layer facing the semiconductor layer. A method of manufacturing the thin film transistor is provided. A thin film transistor array panel and an electronic device may include the thin film transistor.

公开(公告)号：US20220030705A1

公开(公告)日：2022-01-27

申请号：US17336755

申请日：2021-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeongjun LEE ,  Gae Hwang LEE ,  Jong Won CHUNG ,  Joo Young KIM ,  Youngjun YUN

IPC: H05K1/02 ,  H01L51/00 ,  H01L27/12 ,  H05K1/03

Abstract: A stretchable substrate includes a first elastomer, a plurality of unit devices on the stretchable substrate, a connecting wire configured to electrically connect adjacent unit devices, and a plurality of auxiliary structures each including a second elastomer and each at least partially overlapping with at least one unit device or the connecting wire, wherein the first elastomer and the second elastomer are separate, respective polymers that commonly include at least one structural unit.

公开(公告)号：US20210013435A1

公开(公告)日：2021-01-14

申请号：US16747901

申请日：2020-01-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Young KIM ,  Byong Gwon SONG ,  Jeong II PARK ,  Jiyoung JUNG

IPC: H01L51/05 ,  G02F1/1368 ,  H01L51/00 ,  H01L27/28

Abstract: Disclosed are a thin film transistor including a source electrode and a drain electrode facing each other, a channel region between the source electrode and the drain electrode, and a gate electrode overlapped with the channel region, wherein the channel region includes a plurality of semiconductor stripes extending in a direction from the source electrode to the drain electrode, a method of manufacturing the same, a thin film transistor array panel, and an electronic device.

公开(公告)号：US20170153801A1

公开(公告)日：2017-06-01

申请号：US15164232

申请日：2016-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joo Young KIM ,  Keum Yong OH

IPC: G06F3/0484 ,  A61B5/00 ,  A61B5/055 ,  G06F17/22 ,  G06F3/0482

CPC classification number: G06F3/04847 ,  A61B5/055 ,  A61B5/7435 ,  A61B5/7475 ,  A61B6/465 ,  A61B8/465 ,  G01R33/543 ,  G01R33/546 ,  G06F3/0482 ,  G06F17/2247 ,  G16H40/63

Abstract: A medical imaging apparatus and a method of controlling the medical imaging apparatus are provided. The medical imaging apparatus includes a display configured to display a list of protocols, each of the protocols having one or more parameters for acquiring a medical image. The medical imaging apparatus further includes an interface configured to receive an input of a parameter for acquiring the medical image, and a controller configured to group the protocols based on the input parameter, and control the display to display the list of the grouped protocols.

公开(公告)号：US20150123100A1

公开(公告)日：2015-05-07

申请号：US14479845

申请日：2014-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Youl LEE ,  Joo Young KIM ,  Jong Won CHUNG ,  Sang Yoon LEE ,  Jeong Il PARK

IPC: H01L51/05 ,  H01L51/00

CPC classification number: H01L51/0545 ,  H01L51/0007 ,  H01L51/0017 ,  H01L51/0018 ,  H01L51/0074 ,  H01L51/0558

Abstract: A thin film transistor includes a gate electrode and an organic semiconductor overlapping the gate electrode. A gate insulating layer is disposed between the gate electrode and the organic semiconductor. A source electrode and a drain electrode are disposed on and electrically connected to the organic semiconductor. A solvent selective photosensitive pattern is disposed on the organic semiconductor and between the source electrode and the drain electrode. An electronic device may include the thin film transistor.

Abstract translation: 薄膜晶体管包括栅电极和与栅电极重叠的有机半导体。 栅极绝缘层设置在栅电极和有机半导体之间。 源电极和漏电极设置在有机半导体上并与其电连接。 溶剂选择性感光图案设置在有机半导体上，并且在源电极和漏电极之间。 电子设备可以包括薄膜晶体管。

公开(公告)号：US20140175414A1

公开(公告)日：2014-06-26

申请号：US14134651

申请日：2013-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye Yeon YANG ,  Bang Lin LEE ,  Bon Won KOO ,  Joo Young KIM ,  Jeong Il PARK ,  Eun Kyung LEE ,  Ji Youl LEE ,  Jong Won CHUNG ,  Ji Young JUNG

IPC: H01L51/00 ,  H01L51/05

CPC classification number: H01L51/0036 ,  C08G2261/1412 ,  C08G2261/3223 ,  C08G2261/3229 ,  C08G2261/3246 ,  C08G2261/344 ,  C08G2261/364 ,  C08G2261/90 ,  C08G2261/92 ,  C08G2261/94 ,  C08L65/00 ,  H01L51/0043 ,  H01L51/0545 ,  Y02E10/549

Abstract: An organic semiconductor polymer includes a moiety represented by the following Chemical Formula 1 and a heteroaromatic moiety having at least one of sulfur (S) and selenium (Se). In the Chemical Formula 1, R1, R2, R3a, R3b, R4a, R4b, R5a, and R5b, a1, a2, b1, and b2 are the same as described in the detailed description.

Abstract translation: 有机半导体聚合物包括由以下化学式1表示的部分和具有硫（S）和硒（Se）中的至少一种的杂芳族部分。 在化学式1中，R1，R2，R3a，R3b，R4a，R4b，R5a和R5b，a1，a2，b1和b2与详细描述中相同。