公开(公告)号：US20220293730A1

公开(公告)日：2022-09-15

申请号：US17479424

申请日：2021-09-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinbum KIM ,  Gyeom KIM ,  Hyojin KIM ,  Haejun YU ,  Seunghun LEE ,  Kyungin CHOI

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/786

Abstract: An integrated circuit device includes: a fin-type active region extending in a first horizontal direction on a substrate, a channel region on the fin-type active region, a gate line surrounding the channel region on the fin-type active region and extending in a second horizontal direction crossing the first horizontal direction, an insulating spacer covering a sidewall of the gate line, a source/drain region connected to the channel region on the fin-type active region and including a first portion facing the sidewall of the gate line with the insulating spacer therebetween, an air gap between the insulating spacer and the first portion of the source/drain region, and an insulating liner including a portion in contact with the source/drain region and a portion defining a size of the air gap.

公开(公告)号：US20190393303A1

公开(公告)日：2019-12-26

申请号：US16243415

申请日：2019-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungin CHOI ,  Hyunchul SONG ,  Sunjung KIM ,  Taegon KIM ,  Seong Hoon JEONG

IPC: H01L29/06 ,  H01L21/02 ,  H01L29/08 ,  H01L27/092 ,  H01L21/762 ,  H01L21/3115 ,  H01L21/3105 ,  H01L21/8238 ,  H01L27/11

Abstract: A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.