SEMICONDUCTOR MEASUREMENT APPARATUS
    11.
    发明公开

    公开(公告)号:US20230186460A1

    公开(公告)日:2023-06-15

    申请号:US18060830

    申请日:2022-12-01

    CPC classification number: G06T7/001 H04N23/56 H04N23/10 H01L27/108

    Abstract: A semiconductor measurement device may include an illumination apparatus having a polarizer on a propagation path of light output from a light source; an optical assembly including an objective lens configured to allow light passing through the polarizer to be incident on a sample and a beam splitter configured to transmit light reflected from the sample to first and second sensors; and a controller. The controller may be configured to determine an alignment state of patterns in a first region of the sample using a first original image output by the first sensor and an alignment state of patterns in a second region of the sample using a second original image output by the second sensor. The first sensor includes a first image sensor and a self-interference generator in a path along which light is incident on the first image sensor. The second sensor includes a second image sensor.

    SEMICONDUCTOR MEASUREMENT APPARATUS

    公开(公告)号:US20230114817A1

    公开(公告)日:2023-04-13

    申请号:US17857291

    申请日:2022-07-05

    Abstract: A semiconductor measurement apparatus includes an illumination unit including a light source, and a polarizer disposed on a propagation path of light emitted from the light source; an optical unit configured to direct the light passing through the polarizer to be incident onto a sample, and to transmit the light, reflected from the sample, to an image sensor; and a controller configured to process an original image, output by the image sensor, to determine a critical dimension of a structure included in a region of the sample on which the light is incident. The controller acquires a two-dimensional image. The controller orthogonally decomposes the two-dimensional image corresponding to a selected wavelength into a plurality of bases, generates one-dimensional data including a plurality of weights corresponding to the plurality of bases, and uses the one-dimensional data to determine a selected critical dimension among critical dimensions of the structure.

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