公开(公告)号：US20210328039A1

公开(公告)日：2021-10-21

申请号：US17112357

申请日：2020-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun Hye LEE ,  Sung Soo KIM ,  Ik Soo KIM ,  Woong Sik NAM ,  Dong Hyun ROH

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/10

Abstract: A semiconductor device includes first and second active patterns each extending in a first direction and are spaced apart from each other in a second direction that is perpendicular to the first direction. A field insulating layer is disposed between the first active pattern and the second active pattern. A first gate structure is disposed on the first active pattern and extends in the second direction. An interlayer insulating layer is disposed between the first gate structure and the field insulating layer. The interlayer insulating layer includes a first part disposed below the first gate structure. A spacer is disposed between the first gate structure and the first part of the interlayer insulating layer.

公开(公告)号：US20200075399A1

公开(公告)日：2020-03-05

申请号：US16386704

申请日：2019-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo KIM ,  Chae Ho NA ,  Gyu Hwan AHN ,  Dong Hyun ROH ,  Sang Jin HYUN

IPC: H01L21/762 ,  H01L29/66 ,  H01L27/088

Abstract: A semiconductor device includes a substrate having first fin and a second fin spaced apart and extending lengthwise in parallel. A fin remnant is disposed between the first fin and the second fin, extends lengthwise in parallel with the first and second fins, and has a height lower than a height of each of the first fin and the second fin. A first field insulation layer is disposed between a sidewall of the first fin and a first sidewall of the fin remnant and a second field insulating layer is disposed on a sidewall of the second fin. A blocking liner conforms to a sidewall and a bottom surface of a trench bounded by a second sidewall of the fin remnant and a sidewall of the second field insulating layer. A trench insulation layer is disposed on the blocking liner in the trench.

公开(公告)号：US20240153948A1

公开(公告)日：2024-05-09

申请号：US18415863

申请日：2024-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo KIM ,  Gi Gwan PARK ,  Jung Hun CHOI ,  Koung Min RYU ,  Sun Jung LEE

IPC: H01L27/088 ,  H01L21/8234 ,  H01L23/485 ,  H01L23/528 ,  H01L29/423

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823456 ,  H01L21/823475 ,  H01L23/485 ,  H01L23/5283 ,  H01L29/42364 ,  H01L29/42372 ,  H01L27/0924

Abstract: A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.

公开(公告)号：US20220262673A1

公开(公告)日：2022-08-18

申请号：US17740095

申请日：2022-05-09

Applicant: Samsung Electronics Co., LTD.

Inventor： Chae Ho NA ,  Sung Soo KIM ,  Gyu Hwan AHN ,  Dong Hyun ROH

IPC: H01L21/762 ,  H01L29/78 ,  H01L29/06 ,  H01L27/088

Abstract: A semiconductor device includes a substrate, a first fin, and a second fin. The first and second fins are spaced apart from each other in a first direction on the substrate and extend in a second direction intersecting the first direction. The semiconductor device further includes a first shallow trench formed between the first and second fins, and a field insulating film which fills at least a part of the first shallow trench. The field insulating film includes a first portion, a second portion adjacent to the first portion, and a third portion adjacent to the second portion and adjacent to a side wall of the first shallow trench. The first portion includes a central portion of an upper surface of the field insulating film in the first direction. The upper surface of the field insulating film is in a shape of a brace recessed toward the substrate.