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公开(公告)号:US20190170788A1
公开(公告)日:2019-06-06
申请号:US16130699
申请日:2018-09-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Duck Mahn Oh , Sung Yoon Ryu , Young Hoon Sohn , Chung Sam Jun , Yun Jung Jee
CPC classification number: G01Q60/16 , G01Q10/06 , G01Q60/30 , G01Q80/00 , G02B21/002
Abstract: A scanning probe inspector comprises: a probe that includes a cantilever and a tip whose length corresponds to a depth of a trench that is formed in a wafer; a trench detector that acquires location information of the trench using the probe, where the location information includes depth information of the trench; a controller that inserts the tip into a first point where there exists a trench based on the location information of the trench, and moves the tip through the trench using the location information of the trench; and a defect detector that detects a presence of a defect in a sidewall of the trench as the tip is moved through the trench.
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公开(公告)号:US10269111B2
公开(公告)日:2019-04-23
申请号:US15597262
申请日:2017-05-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Joonseo Song , Sung Yoon Ryu , Wahseng Yap , Yunjung Jee , Yusin Yang , Chungsam Jun , Yoo Jin Jeoung , Jaehyung Ahn , Janghee Lee
IPC: G06T7/00
Abstract: A method of inspecting a semiconductor wafer is provided, the method includes scanning a plurality of inspection swaths on a wafer to obtain a plurality of image sets and producing a plurality of reference images from the plurality of image sets, respectively. The method of inspecting a semiconductor wafer further includes selecting a plurality of target images from the plurality of image sets, respectively. The method of inspecting a semiconductor wafer additionally includes comparing each reference image of the plurality of reference images with each target image of the plurality of target images to detect a defect image from each of the plurality of target images. A reference image being compared and a target image being compared are images scanned from the same inspection swath.
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公开(公告)号:US10088297B2
公开(公告)日:2018-10-02
申请号:US15464896
申请日:2017-03-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sung Yoon Ryu , Younghoon Sohn , Yusin Yang , Chungsam Jun , Yunjung Jee
Abstract: Disclosed are apparatuses and methods for measuring a thickness. The apparatus for measuring a thickness including a light source that emits a femto-second laser, an optical coupler through which a portion of the femto-second laser is incident onto a target and other portion of the femto-second laser is incident onto a reference mirror, a detector configured to receive a reflection signal reflected on the reference mirror and a sample signal generated from the target and configured to measure a thickness of the target based on an interference signal between the reflection signal and the sample signal, and a plurality of optical fiber lines configured to connect the light source, the optical coupler, and the detector to each other may be provided.
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公开(公告)号:US20180053292A1
公开(公告)日:2018-02-22
申请号:US15597262
申请日:2017-05-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Joonseo Song , Sung Yoon Ryu , Wahseng Yap , Yunjung Jee , Yusin Yang , Chungsam Jun , Yoo Jin Jeoung , Jaehyung Ahn , Janghee Lee
IPC: G06T7/00
CPC classification number: G06T7/001 , G06T2207/30148
Abstract: A method of inspecting a semiconductor wafer is provided, the method includes scanning a plurality of inspection swaths on a wafer to obtain a plurality of image sets and producing a plurality of reference images from the plurality of image sets, respectively. The method of inspecting a semiconductor wafer further includes selecting a plurality of target images from the plurality of image sets, respectively. The method of inspecting a semiconductor wafer additionally includes comparing each reference image of the plurality of reference images with each target image of the plurality of target images to detect a defect image from each of the plurality of target images. A reference image being compared and a target image being compared are images scanned from the same inspection swath.
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