Method of manufacturing a semiconductor device using semiconductor measurement system
    8.
    发明授权
    Method of manufacturing a semiconductor device using semiconductor measurement system 有权
    使用半导体测量系统制造半导体器件的方法

    公开(公告)号:US09583402B2

    公开(公告)日:2017-02-28

    申请号:US14794813

    申请日:2015-07-09

    IPC分类号: H01L21/66 H01L21/67

    摘要: A method includes loading a substrate into a sensing chamber; while the substrate is in the sensing chamber, performing a spectral analysis of the substrate; transferring the substrate between the sensing chamber and a processing chamber coupled to the sensing chamber; processing the substrate in the processing chamber to form at least a first layer and/or pattern on the substrate; and based on at least the spectral analysis, determining whether a parameter resulting from the formation of first layer and/or pattern is satisfied.

    摘要翻译: 一种方法包括将衬底加载到感测室中; 同时衬底在感测室中,对衬底进行光谱分析; 在所述感测室和耦合到所述感测室的处理室之间传送所述衬底; 在所述处理室中处理所述衬底以在所述衬底上形成至少第一层和/或图案; 并且至少基于光谱分析,确定是否满足形成第一层和/或图案所引起的参数。