Abstract:
A method of operating an electronic device includes selecting, by at least one processor, M first sample-label pairs (M being a positive integer); obtaining, by the at least one processor, M K-values; selecting, by the at least one processor, M second sample-label pairs respectively corresponding to the M first sample-label pairs based on the M K-values, generating, by the at least one processor, M third sample-label pairs based on the M first sample-label pairs and the M second sample-label pairs, and training, by the at least one processor, a regression analysis module based on the M third sample-label pairs, and the regression analysis module is trained to predict labels, which are associated with the semiconductor device, from the M third sample-label pairs.
Abstract:
A light source uniformity adjusting device is provided, which easily and exactly performs a coiling task of an optical fiber. The light source uniformity adjusting device includes a base plate including a plurality of holes therein; a first fixing portion on one side of the base plate, fixing a first portion of an optical fiber; a second fixing portion disposed on another side of the base plate, fixing a second portion of the optical fiber; and a post portion inserted into at least one hole from among the plurality of holes, the post portion routing the optical fiber on the base plate such that the optical fiber has at least one curved shape between the first portion and the second portion.
Abstract:
A method for measuring a semiconductor device is provided. A method for measuring a semiconductor device includes defining an interest area and an acceptable area in a chip area on a wafer; performing a first measurement of the chip area with a spectral imaging device to acquire spectrum data of the chip area; assuming the distribution of the spectrum data of a first pixel in the acceptable area is a normal distribution; calculating a distance from a central point on the normal distribution to second pixels in the interest area; selecting a position of a second pixel having a distance from the central point on the normal distribution greater than a predetermined range, among the second pixels, as a candidate position; and performing a second measurement of the candidate position.
Abstract:
An optical module includes: a diffraction grating configured to rotate and focus a beam, which is incident thereon from an incident path, onto a Fourier plane, a digital micromirror array (DMD) configured to assign a frequency for each wavelength of the focused beam received at the Fourier plane, and perform a Fourier transform for each frequency, and a first optical fiber configured to receive a beam that is reflected back from the DMD back and the diffraction grating, and along the incident path.
Abstract:
Disclosed are mass flow controllers, apparatuses for manufacturing semiconductor devices, and methods of maintenance thereof. The mass flow controller may control an amount of a gas provided into a chamber. The mass flow controller may be configured to obtain an absolute volume of the gas provided into the chamber at a standard flow rate when the mass flow controller is initially used. The mass flow controller may be configured to obtain a detected flow rate of the gas provided at a measured flow rate after the mass flow controller has been used for a predetermined time. The mass flow controller may be configured to compare the detected flow rate and the standard flow rate to verify a full-scale error in the measured flow rate.
Abstract:
A method of inspecting a substrate includes irradiating light onto a substrate that has experienced a first process, obtaining spectral data of the light reflected from the substrate, detecting a defect region of the substrate from the spectral data, and extracting a first defect site that occurred in or during the first process from the defect region. Extracting the first defect site includes establishing an effective area where the first process affects the substrate, and extracting a superimposed area that is overlapped with the effective area from the defect region. The superimposed area is defined as the first defect site.
Abstract:
A substrate transferring apparatus includes a support plate including an upper surface on which a substrate is configured to be seated, and a vacuum pad detachably coupled to the support plate and configured to vacuum suction the substrate to fix the substrate on the upper surface of the support plate, wherein the vacuum pad includes a suction area and a support protrusion surrounding the suction area, an upper surface of the support protrusion is at a higher vertical level than an upper surface of the suction area to support the substrate, and the upper surface of the support protrusion is inclined relative to horizontal.
Abstract:
A scanning probe inspector comprises: a probe that includes a cantilever and a tip whose length corresponds to a depth of a trench that is formed in a wafer; a trench detector that acquires location information of the trench using the probe, where the location information includes depth information of the trench; a controller that inserts the tip into a first point where there exists a trench based on the location information of the trench, and moves the tip through the trench using the location information of the trench; and a defect detector that detects a presence of a defect in a sidewall of the trench as the tip is moved through the trench.
Abstract:
A method includes loading a substrate into a sensing chamber; while the substrate is in the sensing chamber, performing a spectral analysis of the substrate; transferring the substrate between the sensing chamber and a processing chamber coupled to the sensing chamber; processing the substrate in the processing chamber to form at least a first layer and/or pattern on the substrate; and based on at least the spectral analysis, determining whether a parameter resulting from the formation of first layer and/or pattern is satisfied.
Abstract:
Disclosed are methods of inspecting semiconductor wafers, inspection systems for performing the same, and methods of fabricating semiconductor devices using the same. A method of inspecting a semiconductor wafer including preparing a wafer including zones each having patterns, obtaining representative values for the patterns, scanning the patterns under an optical condition to obtain optical signals for the patterns, each of the optical signals including optical parameters, selecting a representative optical parameter that is one of the optical parameters that has a correlation with the representative values, obtaining a reference value of the representative optical parameter for a reference pattern, and obtaining a defect of an inspection pattern by comparing the reference value with an inspection value of the representative optical parameter for the inspection pattern.