MASS FLOW CONTROLLER, APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR MAINTENANCE THEREOF

    公开(公告)号:US20190170563A1

    公开(公告)日:2019-06-06

    申请号:US16013199

    申请日:2018-06-20

    Abstract: Disclosed are mass flow controllers, apparatuses for manufacturing semiconductor devices, and methods of maintenance thereof. The mass flow controller may control an amount of a gas provided into a chamber. The mass flow controller may be configured to obtain an absolute volume of the gas provided into the chamber at a standard flow rate when the mass flow controller is initially used. The mass flow controller may be configured to obtain a detected flow rate of the gas provided at a measured flow rate after the mass flow controller has been used for a predetermined time. The mass flow controller may be configured to compare the detected flow rate and the standard flow rate to verify a full-scale error in the measured flow rate.

    Scanning probe inspector
    8.
    发明授权

    公开(公告)号:US10585115B2

    公开(公告)日:2020-03-10

    申请号:US16130699

    申请日:2018-09-13

    Abstract: A scanning probe inspector comprises: a probe that includes a cantilever and a tip whose length corresponds to a depth of a trench that is formed in a wafer; a trench detector that acquires location information of the trench using the probe, where the location information includes depth information of the trench; a controller that inserts the tip into a first point where there exists a trench based on the location information of the trench, and moves the tip through the trench using the location information of the trench; and a defect detector that detects a presence of a defect in a sidewall of the trench as the tip is moved through the trench.

    Method of manufacturing a semiconductor device using semiconductor measurement system
    9.
    发明授权
    Method of manufacturing a semiconductor device using semiconductor measurement system 有权
    使用半导体测量系统制造半导体器件的方法

    公开(公告)号:US09583402B2

    公开(公告)日:2017-02-28

    申请号:US14794813

    申请日:2015-07-09

    CPC classification number: H01L22/12 H01L21/67173 H01L22/20

    Abstract: A method includes loading a substrate into a sensing chamber; while the substrate is in the sensing chamber, performing a spectral analysis of the substrate; transferring the substrate between the sensing chamber and a processing chamber coupled to the sensing chamber; processing the substrate in the processing chamber to form at least a first layer and/or pattern on the substrate; and based on at least the spectral analysis, determining whether a parameter resulting from the formation of first layer and/or pattern is satisfied.

    Abstract translation: 一种方法包括将衬底加载到感测室中; 同时衬底在感测室中,对衬底进行光谱分析; 在所述感测室和耦合到所述感测室的处理室之间传送所述衬底; 在所述处理室中处理所述衬底以在所述衬底上形成至少第一层和/或图案; 并且至少基于光谱分析,确定是否满足形成第一层和/或图案所引起的参数。

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