公开(公告)号：US20220367520A1

公开(公告)日：2022-11-17

申请号：US17380999

申请日：2021-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： BYOUNGHAK HONG ,  SEUNGHYUN SONG ,  KI-IL KIM ,  GUNHO JO ,  KANG-ILL SEO

IPC: H01L27/12 ,  H01L27/088 ,  H01L21/84 ,  H01L21/822 ,  H01L21/8234

Abstract: Nanosheet transistor devices are provided. A nanosheet transistor device includes a transistor stack that includes a lower nanosheet transistor having a first nanosheet width and a lower gate width. The transistor stack also includes an upper nanosheet transistor that is on the lower nanosheet transistor and that has a second nanosheet width and an upper gate width that are different from the first nanosheet width and the lower gate width, respectively. Related methods of forming a nanosheet transistor device are also provided.