公开(公告)号：US20120163818A1

公开(公告)日：2012-06-28

申请号：US13280103

申请日：2011-10-24

Applicant: Dong Soo LEE ,  Jong Deog KIM ,  Sung Chang KIM ,  Hark YOO ,  Mun Seob LEE ,  Geun Yong KIM ,  Young Suk LEE ,  Sim Kwon YOON ,  Sang Soo LEE ,  Han Hyub LEE

Inventor： Dong Soo LEE ,  Jong Deog KIM ,  Sung Chang KIM ,  Hark YOO ,  Mun Seob LEE ,  Geun Yong KIM ,  Young Suk LEE ,  Sim Kwon YOON ,  Sang Soo LEE ,  Han Hyub LEE

IPC: H04J14/02 ,  H04J14/08

CPC classification number: H04B10/272 ,  H04J14/0232 ,  H04J14/0238 ,  H04J14/0246 ,  H04J14/0247 ,  H04J14/025 ,  H04J14/0252 ,  H04J14/0282

Abstract: Disclosed herein are a remote node and a telephone station terminal in a passive optical network (PON). The remote node includes an optical circulator that transmits downlink signals input from a downlink optical backbone network to a wavelength distributor and transmits uplink signals input from the wavelength distributor to an uplink optical backbone network different from a downlink optical backbone network; and a wavelength distributor that distributes the downlink signal input from the optical circulator into a plurality of wavelengths to be connected to an optical distribution network and connects the uplink signals input from the optical distribution network to the optical circulator.

Abstract translation: 这里公开了无源光网络（PON）中的远程节点和电话站终端。 远程节点包括光环行器，其将从下行链路光骨干网输入的下行链路信号发送到波长分配器，并将从波长分配器输入的上行链路信号发送到不同于下行光纤骨干网络的上行光纤骨干网络; 以及波长分配器，其将从光循环器输入的下行链路信号分配成多个波长以连接到光分配网络，并将从光分配网络输入的上行链路信号连接到光循环器。

公开(公告)号：US20100219473A1

公开(公告)日：2010-09-02

申请号：US12495578

申请日：2009-06-30

Applicant: Sang Soo LEE

Inventor： Sang Soo LEE

IPC: H01L27/12 ,  H01L21/336

CPC classification number: H01L27/1203 ,  H01L21/743

Abstract: Disclosed herein is a fabrication method of a semiconductor device to order to increase an operation liability of the semiconductor device. A method for fabricating a semiconductor device comprises forming a buried-type wordline in an active region defined on a SOI substrate, forming a silicon connection region for connecting an upper silicon layer to a lower silicon layer between neighboring buried type wordlines, and recovering the upper silicon layer on the silicon connection region.

Abstract translation: 这里公开了半导体器件的制造方法，以增加半导体器件的操作负担。 一种制造半导体器件的方法，包括：在SOI衬底上形成的有源区中形成掩埋型字线，形成用于将上硅层连接到相邻掩埋型字线之间的下硅层的硅连接区域， 硅层上的硅连接区域。

公开(公告)号：US20170136337A1

公开(公告)日：2017-05-18

申请号：US15312964

申请日：2014-09-04

Applicant: Sang Soo LEE

Inventor： Sang Soo LEE

IPC: A63B69/40 ,  A63B67/187

CPC classification number: A63B69/40 ,  A63B67/08 ,  A63B67/18 ,  A63B67/187 ,  A63B69/409 ,  A63B2071/025

Abstract: An automatic shuttlecock collecting and supplying apparatus including: a shuttlecock storage hopper that has a exit hole at the end of the bottom and having the bottom inclined toward the exit hole; a launching tube unit that temporarily keeps one shuttlecock and includes at least two rotary launching tubes; a launching unit that launches shuttlecocks in the launching tubes forward by striking the shuttlecocks; a shuttlecock supply unit that is disposed behind the launching tubes and supplies shuttlecocks into an aligned launching tube; and a conveyer unit that connects the exit hole and the shuttlecock supply unit to convey the shuttlecocks in the shuttlecock storage unit to the shuttlecock supply unit.

公开(公告)号：US20120091554A1

公开(公告)日：2012-04-19

申请号：US12982600

申请日：2010-12-30

Applicant: Sang Soo LEE

Inventor： Sang Soo LEE

IPC: H01L23/58 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/3081 ,  H01L21/3086 ,  H01L27/10891 ,  H01L27/10894

Abstract: A method for manufacturing a semiconductor device comprises: etching a semiconductor substrate to form a trench that defines an active region of a line type; burying an insulating film in the trench; and removing a portion of the active region of a line type to form a separated active region. The method improves the process for forming an active region using a Spacer patterning Technology (SPT), thereby preventing characteristic defects of the device and improving the operating characteristic.

Abstract translation: 一种制造半导体器件的方法包括：蚀刻半导体衬底以形成限定线型有源区的沟槽; 在沟槽中埋设绝缘膜; 以及去除线型有源区域的一部分以形成分离的有源区。 该方法改进了使用间隔图案化技术（SPT）形成有源区的工艺，从而防止了器件的特征缺陷并提高了工作特性。