公开(公告)号：US20060228908A1

公开(公告)日：2006-10-12

申请号：US11234609

申请日：2005-09-23

Applicant: Se-Jin Chung ,  Chi-Woo Kim ,  Ui-Jin Chung ,  Dong-Byum Kim

Inventor： Se-Jin Chung ,  Chi-Woo Kim ,  Ui-Jin Chung ,  Dong-Byum Kim

IPC: H01L21/00

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675

Abstract: In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

公开(公告)号：US07056382B2

公开(公告)日：2006-06-06

申请号：US10689030

申请日：2003-10-21

Applicant: Se-Jin Chung

Inventor： Se-Jin Chung

IPC: C30B25/12

CPC classification number: C30B29/06 ,  C30B13/00 ,  Y10T117/10

Abstract: A method of crystallizing an amorphous silicon layer includes the steps of generating an excimer laser beam having a first energy density and a second energy density, irradiating an amorphous silicon layer with at least one exposure of the excimer, wherein the first energy density melts the amorphous silicon layer to a first depth from a surface of the amorphous silicon layer equal to the first thickness and the second energy density melts the amorphous silicon layer to a second depth from the surface of the amorphous silicon layer less than the first thickness.

公开(公告)号：US06656270B2

公开(公告)日：2003-12-02

申请号：US09965844

申请日：2001-10-01

Applicant: Se-Jin Chung

Inventor： Se-Jin Chung

IPC: C30B2502

CPC classification number: C30B29/06 ,  C30B13/00 ,  Y10T117/10

Abstract: A method of crystallizing an amorphous silicon layer includes the steps of generating an excimer laser beam having a first energy density and a second energy density, irradiating an amorphous silicon layer with at least one exposure of the excimer, wherein the first energy density melts the amorphous silicon layer to a first depth from a surface of the amorphous silicon layer equal to the first thickness and the second energy density melts the amorphous silicon layer to a second depth from the surface of the amorphous silicon layer less than the first thickness.

公开(公告)号：US06326286B1

公开(公告)日：2001-12-04

申请号：US09311700

申请日：1999-05-13

Applicant: Won-Kyu Park ,  Yun-Ho Jung ,  Se-Jin Chung

Inventor： Won-Kyu Park ,  Yun-Ho Jung ,  Se-Jin Chung

IPC: H01L2120

CPC classification number: H01L21/0268 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757

Abstract: An active layer commonly used in a thin-film-transistor is made by irradiating an amorphous silicon layer with a laser source at an energy density sufficient to induce substantially complete melting to form a melted region and an unmelted region. The melted region of the amorphous silicon layer is solidified with a lateral grain growth from the unmelted region to the melted region. Then the amorphous silicon layer is translated relative to the laser source. In such an apparatus, the laser source is prepared by emitting a laser beam through a mask. The mask has a plurality of transparent regions which comprises slits arranged adjacent to or next to each other and separated by a predetermined distance in certain applications. Such pattern includes contiguous chevron-shaped lines with curved apexes. Alternatively, the pattern also includes slim rectangular apertures.

Abstract translation: 在薄膜晶体管中通常使用的有源层通过以足以引起基本上完全熔化以形成熔融区域和未熔化区域的能量密度的激光源照射非晶硅层而制成。 非晶硅层的熔融区域由从未熔化区域到熔融区域的横向晶粒生长而固化。 然后非晶硅层相对于激光源平移。 在这种装置中，激光源通过掩模发射激光束来制备。 掩模具有多个透明区域，其包括彼此相邻或相邻布置的狭缝，并且在某些应用中间隔预定距离。 这种图案包括具有弯曲顶点的相邻的人字形线。 或者，图案还包括纤细的矩形孔。