公开(公告)号：US20210201942A1

公开(公告)日：2021-07-01

申请号：US16731526

申请日：2019-12-31

Applicant: Seagate Technology LLC

Inventor： Tong Zhao ,  Martin Blaber ,  Li Wan

IPC: G11B5/39 ,  C22C5/04 ,  G11B5/48

Abstract: Heat assisted magnetic recording (HAMR) devices that includes a near field transducer, the near field transducer including alloys of a first element selected from: platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru), and osmium (Os); and a second element selected from; hafnium (Hf), niobium (Nb), tantalum (Ta), titanium (Ti), vanadium (V), and zirconium (Zr).

公开(公告)号：US12057147B2

公开(公告)日：2024-08-06

申请号：US17511741

申请日：2021-10-27

Applicant: Seagate Technology LLC

Inventor： Tong Zhao ,  Li Wan ,  Michael Christopher Kautzky

IPC: G11B5/31 ,  B81C1/00 ,  B82B1/00 ,  H01F10/30 ,  H01L21/3065 ,  H01L21/67 ,  B82Y10/00 ,  G11B5/00 ,  G11B11/24 ,  H01L21/3213

CPC classification number: G11B5/3163 ,  B81C1/00111 ,  B82B1/003 ,  G11B5/3133 ,  H01F10/30 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/67069 ,  B81C2201/0132 ,  B81C2201/0143 ,  B82Y10/00 ,  G11B2005/0021 ,  G11B11/24 ,  H01L21/32136

Abstract: A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a first thickness T1; and ion beam milling the layer of the template material to remove thickness T2, where T2