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公开(公告)号：US09890449B2
公开(公告)日：2018-02-13
申请号：US14699190
申请日：2015-04-29
Applicant: Seagate Technology LLC
Inventor： Qing He , Jae Young Yi , Eric W. Singleton
CPC classification number: C23C14/081 , B82Y25/00 , C23C14/568 , C23C14/5806 , C23C28/32 , C23C28/322 , C23C28/345 , G11B5/3163 , G11B5/3909
Abstract: A method of making an MgO barrier layer for a TMR sensor, the method including depositing a first Mg layer in a first chamber, depositing a second Mg layer on the first Mg layer using a reactive oxide deposition process in the presence of oxygen in the first chamber or in a second chamber different than the first chamber, depositing a third Mg layer on the second MgO layer in either the first chamber, the second chamber, or a third chamber, and annealing the first layer, the second layer, and the third layer to form an MgO barrier layer.
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Patent Agency Ranking
公开(公告)号：US20160035376A1
公开(公告)日：2016-02-04
申请号：US14447910
申请日：2014-07-31
Applicant: Seagate Technology LLC
Inventor： Qing He , Mark William Covington , Mark Thomas Kief
CPC classification number: G11B5/3906 , G11B5/3163 , G11B5/332
Abstract: A data reader may be configured with a tuned microstructure by initially cooling a substrate to a temperature of 100K or lower and subsequently depositing at least one layer of a data reader on the substrate while the substrate is maintained at the temperature. The tuned microstructure may consist of at least a grain size, grain size distribution, interface quality between multiple layers of the data reader, resistance-area product, and magnetoresistance.
Abstract translation: 数据读取器可以通过首先将衬底冷却到100K或更低的温度并随后在衬底保持在该温度下的同时在衬底上沉积至少一层数据读取器而配置有调谐微结构。 调谐的微结构可以由至少晶粒尺寸，晶粒尺寸分布，数据读取器的多个层之间的界面质量，电阻面积积和磁电阻组成。
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公开(公告)号：US20140035572A1
公开(公告)日：2014-02-06
申请号：US14052179
申请日：2013-10-11
Applicant: Seagate Technology LLC
Inventor： Brian William Karr , Eric Walter Singleton , Qing He
IPC: G01R33/09
CPC classification number: G01R33/098 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3912 , G11B5/3932
Abstract: A magnetic sensor includes a magnetic layer comprising magnetic material and a grain refining agent. The magnetic layer having a grain-refined magnetic layer surface. A layer adjacent the magnetic layer has a layer surface that conforms to the grain-refined magnetic layer surface.
Abstract translation: 磁传感器包括由磁性材料和晶粒细化剂构成的磁性层。 磁性层具有晶粒细化的磁性层表面。 与磁性层相邻的层具有与晶粒细化的磁性层表面一致的层表面。
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公开(公告)号：US20130149559A1
公开(公告)日：2013-06-13
申请号：US13760286
申请日：2013-02-06
Applicant: Seagate Technology LLC
Inventor： Mark William Covington , Qing He , Thomas Roy Boonstra
IPC: G11B5/33
CPC classification number: G11B5/33 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3912 , G11B2005/3996 , Y10T428/11 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/1193
Abstract: An apparatus and associated method may be used to provide a data sensing element capable of detecting changes in magnetic states. Various embodiments of the present invention are generally directed to a magnetically responsive lamination of layers and [a] means for generating a high magnetic moment region proximal to an air bearing surface (ABS) and a low magnetic moment region proximal to a hard magnet.
Abstract translation: 可以使用装置和相关联的方法来提供能够检测磁状态的变化的数据感测元件。 本发明的各种实施例通常涉及层的磁响应层压，以及用于产生靠近空气轴承表面（ABS）的高磁矩区域和靠近硬磁体的低磁矩区域的装置。
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公开(公告)号：US20160319419A1
公开(公告)日：2016-11-03
申请号：US14699190
申请日：2015-04-29
Applicant: Seagate Technology LLC
Inventor： Qing He , Jae Young Yi , Eric W. Singleton
CPC classification number: C23C14/081 , B82Y25/00 , C23C14/568 , C23C14/5806 , C23C28/32 , C23C28/322 , C23C28/345 , G11B5/3163 , G11B5/3909
Abstract: A method of making an MgO barrier layer for a TMR sensor, the method including depositing a first Mg layer in a first chamber, depositing a second Mg layer on the first Mg layer using a reactive oxide deposition process in the presence of oxygen in the first chamber or in a second chamber different than the first chamber, depositing a third Mg layer on the second MgO layer in either the first chamber, the second chamber, or a third chamber, and annealing the first layer, the second layer, and the third layer to form an MgO barrier layer.
Abstract translation: 一种制造用于TMR传感器的MgO阻挡层的方法，所述方法包括在第一室中沉积第一Mg层，在第一Mg层中在氧的存在下使用反应性氧化物沉积工艺在第一Mg层上沉积第二Mg层 或者在与第一室不同的第二室中，在第一室，第二室或第三室中的第二MgO层上沉积第三Mg层，并且退火第一层，第二层和第三层 层以形成MgO阻挡层。
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公开(公告)号：US09378760B2
公开(公告)日：2016-06-28
申请号：US14447910
申请日：2014-07-31
Applicant: Seagate Technology LLC
Inventor： Qing He , Mark William Covington , Mark Thomas Kief
CPC classification number: G11B5/3906 , G11B5/3163 , G11B5/332
Abstract: A data reader may be configured with a tuned microstructure by initially cooling a substrate to a temperature of 100K or lower and subsequently depositing at least one layer of a data reader on the substrate while the substrate is maintained at the temperature. The tuned microstructure may consist of at least a grain size, grain size distribution, interface quality between multiple layers of the data reader, resistance-area product, and magnetoresistance.
Abstract translation: 数据读取器可以通过首先将衬底冷却到100K或更低的温度并随后在衬底保持在该温度下的同时在衬底上沉积至少一层数据读取器而配置有调谐微结构。 调谐的微结构可以由至少晶粒尺寸，晶粒尺寸分布，数据读取器的多个层之间的界面质量，电阻面积积和磁电阻组成。
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