公开(公告)号：US11777089B2

公开(公告)日：2023-10-03

申请号：US17729170

申请日：2022-04-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Mayumi Mikami ,  Aya Uchida ,  Yumiko Yoneda ,  Yohei Momma ,  Masahiro Takahashi ,  Teruaki Ochiai

IPC: H01B1/08 ,  H01M4/505 ,  C01G53/00 ,  H01M4/525 ,  H01M4/131 ,  H01M4/133 ,  H01M4/134 ,  H01M4/139 ,  H01M4/36 ,  H01M10/0525 ,  H01M6/16 ,  H01M4/02

CPC classification number: H01M4/525 ,  C01G53/50 ,  H01B1/08 ,  H01M4/131 ,  H01M4/133 ,  H01M4/134 ,  H01M4/139 ,  H01M4/366 ,  H01M4/505 ,  H01M6/164 ,  H01M10/0525 ,  C01P2002/74 ,  H01M2004/028

Abstract: A positive electrode active material having high capacity and excellent cycle performance is provided. The positive electrode active material has a small difference in a crystal structure between the charged state and the discharged state. For example, the crystal structure and volume of the positive electrode active material, which has a layered rock-salt crystal structure in the discharged state and a pseudo-spinel crystal structure in the charged state at a high voltage of approximately 4.6 V, are less likely to be changed by charge and discharge as compared with those of a known positive electrode active material.

公开(公告)号：US09774034B2

公开(公告)日：2017-09-26

申请号：US14553674

申请日：2014-11-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro Kawakami ,  Mayumi Mikami ,  Shunsuke Adachi ,  Shuhei Yoshitomi ,  Teruaki Ochiai ,  Yumiko Yoneda ,  Yohei Momma ,  Satoshi Seo

IPC: H01M4/02 ,  H01M4/36 ,  H01M4/505 ,  H01M4/525 ,  H01M4/58 ,  C01G45/12 ,  C01G53/00

CPC classification number: H01M4/505 ,  C01G45/1228 ,  C01G53/50 ,  C01P2002/80 ,  C01P2002/85 ,  C01P2002/89 ,  C01P2004/04 ,  H01M4/366 ,  H01M4/525 ,  H01M4/5825

Abstract: To increase the amount of lithium ions that can be received in and released from a positive electrode active material to achieve high capacity and high energy density of a secondary battery. A lithium manganese oxide particle includes a first region and a second region. The valence number of manganese in the first region is lower than the valence number of manganese in the second region. The lithium manganese oxide has high structural stability and high capacity characteristics.

公开(公告)号：US09064967B2

公开(公告)日：2015-06-23

申请号：US14472602

申请日：2014-08-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideomi Suzawa ,  Motomu Kurata ,  Mayumi Mikami

IPC: H01L29/788 ,  H01L21/336 ,  H01L29/786 ,  H01L27/12 ,  H01L29/417 ,  H01L27/108 ,  H01L29/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/108 ,  H01L27/1225 ,  H01L29/12 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2029/42388

Abstract: The semiconductor element includes an oxide semiconductor layer on an insulating surface; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer. The source electrode layer and the drain electrode layer have sidewalls which are in contact with a top surface of the oxide semiconductor layer.

Abstract translation: 半导体元件在绝缘表面上包括氧化物半导体层; 氧化物半导体层上的源电极层和漏电极层; 氧化物半导体层上的栅极绝缘层，源极电极层和漏极电极层; 以及栅极绝缘层上的栅极电极层。 源电极层和漏电极层具有与氧化物半导体层的顶表面接触的侧壁。

公开(公告)号：US11616231B2

公开(公告)日：2023-03-28

申请号：US17750436

申请日：2022-05-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Mayumi Mikami ,  Aya Uchida ,  Yumiko Yoneda ,  Yohei Momma ,  Masahiro Takahashi ,  Teruaki Ochiai

IPC: H01B1/08 ,  H01M4/525 ,  H01M4/131 ,  C01G53/00 ,  H01M4/133 ,  H01M4/134 ,  H01M4/139 ,  H01M4/36 ,  H01M4/505 ,  H01M10/0525 ,  H01M6/16 ,  H01M4/02

Abstract: A positive electrode active material having high capacity and excellent cycle performance is provided. The positive electrode active material has a small difference in a crystal structure between the charged state and the discharged state. For example, the crystal structure and volume of the positive electrode active material, which has a layered rock-salt crystal structure in the discharged state and a pseudo-spinel crystal structure in the charged state at a high voltage of approximately 4.6 V, are less likely to be changed by charge and discharge as compared with those of a known positive electrode active material.

公开(公告)号：US11043660B2

公开(公告)日：2021-06-22

申请号：US16923494

申请日：2020-07-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Teruaki Ochiai ,  Takahiro Kawakami ,  Mayumi Mikami ,  Yohei Momma ,  Masahiro Takahashi ,  Ayae Tsuruta

IPC: H01M4/131 ,  H01M4/1315 ,  H01M4/1391 ,  H01M4/62 ,  H01M4/13915 ,  H01M4/134 ,  H01M4/36 ,  H01M4/525 ,  H01M4/86 ,  H01M4/02 ,  H01M10/0525

Abstract: A positive electrode active material which can improve cycle characteristics of a secondary battery is provided. Two kinds of regions are provided in a superficial portion of a positive electrode active material such as lithium cobaltate which has a layered rock-salt crystal structure. The inner region is a non-stoichiometric compound containing a transition metal such as titanium, and the outer region is a compound of representative elements such as magnesium oxide. The two kinds of regions each have a rock-salt crystal structure. The inner layered rock-salt crystal structure and the two kinds of regions in the superficial portion are topotaxy; thus, a change of the crystal structure of the positive electrode active material generated by charging and discharging can be effectively suppressed. In addition, since the outer coating layer in contact with an electrolyte solution is the compound of representative elements which is chemically stable, the secondary battery having excellent cycle characteristics can be obtained.

公开(公告)号：US10998141B2

公开(公告)日：2021-05-04

申请号：US16840659

申请日：2020-04-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yumiko Saito ,  Rie Yokoi ,  Mayumi Mikami

IPC: H01G11/48 ,  H01M4/38 ,  H01G11/50 ,  H01G11/30 ,  H01M4/48 ,  H01M4/13 ,  H01M4/66 ,  H01G11/32 ,  H01G11/52 ,  H01G11/62 ,  H01M4/04 ,  H01M4/131 ,  H01M4/137 ,  H01M4/1391 ,  H01M4/1399 ,  H01M4/36 ,  H01M4/60 ,  H01M10/0525 ,  H01M4/02

Abstract: A mixture of amorphous PAHs and at least one of a carrier ion storage metal, a Sn compound, a carrier ion storage alloy, a metal compound, Si, Sb, and SiO2 is used as the negative electrode active material. The theoretical capacity of amorphous PAHs greatly exceeds that of a graphite based carbon material. Thus, the use of amorphous PAHs enables the negative electrode active material to have a higher capacity than in the case of using the graphite-based carbon material. Further, addition of at least one of the carrier ion storage metal, the Sn compound, the carrier ion storage alloy, the metal compound, Si, Sb, and SiO2 to the amorphous PAHs enables the negative electrode active material to have a higher capacity than the case of only using the amorphous PAHs.

公开(公告)号：US20140367678A1

公开(公告)日：2014-12-18

申请号：US14472602

申请日：2014-08-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideomi Suzawa ,  Motomu Kurata ,  Mayumi Mikami

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/108 ,  H01L27/1225 ,  H01L29/12 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2029/42388

Abstract: The semiconductor element includes an oxide semiconductor layer on an insulating surface; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer. The source electrode layer and the drain electrode layer have sidewalls which are in contact with a top surface of the oxide semiconductor layer.

公开(公告)号：US08823074B2

公开(公告)日：2014-09-02

申请号：US13956444

申请日：2013-08-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideomi Suzawa ,  Motomu Kurata ,  Mayumi Mikami

IPC: H01L29/788 ,  H01L21/336

CPC classification number: H01L29/7869 ,  H01L27/108 ,  H01L27/1225 ,  H01L29/12 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2029/42388

Abstract: The semiconductor element includes an oxide semiconductor layer on an insulating surface; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer. The source electrode layer and the drain electrode layer have sidewalls which are in contact with a top surface of the oxide semiconductor layer.

Abstract translation: 半导体元件在绝缘表面上包括氧化物半导体层; 氧化物半导体层上的源电极层和漏电极层; 氧化物半导体层上的栅极绝缘层，源极电极层和漏极电极层; 以及栅极绝缘层上的栅极电极层。 源电极层和漏电极层具有与氧化物半导体层的顶表面接触的侧壁。

公开(公告)号：US20140027767A1

公开(公告)日：2014-01-30

申请号：US13956444

申请日：2013-08-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideomi Suzawa ,  Motomu Kurata ,  Mayumi Mikami

IPC: H01L29/12 ,  H01L27/108

CPC classification number: H01L29/7869 ,  H01L27/108 ,  H01L27/1225 ,  H01L29/12 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2029/42388

Abstract: The semiconductor element includes an oxide semiconductor layer on an insulating surface; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer. The source electrode layer and the drain electrode layer have sidewalls which are in contact with a top surface of the oxide semiconductor layer.

Abstract translation: 半导体元件在绝缘表面上包括氧化物半导体层; 氧化物半导体层上的源电极层和漏电极层; 氧化物半导体层上的栅极绝缘层，源极电极层和漏极电极层; 以及栅极绝缘层上的栅极电极层。 源电极层和漏电极层具有与氧化物半导体层的顶表面接触的侧壁。

公开(公告)号：US12272822B2

公开(公告)日：2025-04-08

申请号：US16624319

申请日：2018-06-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro Takahashi ,  Mayumi Mikami ,  Yohei Momma ,  Teruaki Ochiai ,  Jyo Saitou

IPC: H01M4/525 ,  C01G51/66 ,  C01G53/66 ,  H01M4/13915 ,  H01M10/0525 ,  C01G45/1214 ,  C01G51/42 ,  C01G53/44 ,  H01M4/02 ,  H01M4/1315

Abstract: A positive electrode active material has a small difference in a crystal structure between the charged state and the discharged state. For example, the crystal structure and volume of the positive electrode active material, which has a layered rock-salt crystal structure in the discharged state and a pseudo-spinel crystal structure in the charged state at a high voltage of approximately 4.6 V, are less likely to be changed by charging and discharging as compared with those of a known positive electrode active material. In order to form the positive electrode active material having the pseudo-spinel crystal structure in the charged state, it is preferable that a halogen source such as a fluorine and a magnesium source be mixed with particles of a composite oxide containing lithium, a transition metal, and oxygen, which is synthesized in advance, and then the mixture be heated at an appropriate temperature for an appropriate time.