公开(公告)号：US07382451B2

公开(公告)日：2008-06-03

申请号：US10904873

申请日：2004-12-01

Applicant: Long-Hui Lin ,  Chia-Yun Chen

Inventor： Long-Hui Lin ,  Chia-Yun Chen

IPC: G01N21/00

CPC classification number: H01L21/67276 ,  H01L21/67253

Abstract: A plurality of cassettes, each having a plurality of wafers respectively having a first defect information, is selected. Each of the cassettes is then assigned to a corresponding tool having at least one reaction chamber, and the wafers are substantially equally assigned to the reaction chambers. A first process is then performed on each of the wafers in the reaction chamber. Finally, a first defect inspection process is performed on each of the wafers.

Abstract translation: 选择具有分别具有第一缺陷信息的多个晶片的多个盒。 然后将每个盒分配给具有至少一个反应室的相应工具，并且将晶片基本上等同地分配给反应室。 然后在反应室中的每个晶片上执行第一工艺。 最后，对每个晶片执行第一缺陷检查处理。

公开(公告)号：US20070013900A1

公开(公告)日：2007-01-18

申请号：US11182798

申请日：2005-07-18

Applicant: Long-Hui Lin ,  Li-Yu Chan

Inventor： Long-Hui Lin ,  Li-Yu Chan

IPC: G01N21/88

CPC classification number: G01N21/9501 ,  G01N2021/945 ,  H01L22/12

Abstract: A wafer detection method. A plurality of PSL particles are sprayed on a wafer. An inspection operation is implemented on the wafer to obtain location information corresponding to a plurality of defects on the wafer, each location information corresponding to the defects comprises an error value. An inspection operation implemented on the PSL particles to obtain location information corresponding to the PSL particles. Offset location information corresponding to each defect is calculated according to the location information corresponding to each PSL particle. The error values corresponding to each defect are corrected according to the offset location information corresponding to each defect.

Abstract translation: 晶片检测方法。 将许多PSL颗粒喷涂在晶片上。 在晶片上执行检查操作以获得与晶片上的多个缺陷相对应的位置信息，与缺陷相对应的每个位置信息包括误差值。 在PSL粒子上实施的检查操作，以获得与PSL粒子对应的位置信息。 根据对应于每个PSL粒子的位置信息来计算与每个缺陷相对应的偏移位置信息。 根据对应于每个缺陷的偏移位置信息来校正与每个缺陷对应的误差值。

公开(公告)号：US20050177264A1

公开(公告)日：2005-08-11

申请号：US10708059

申请日：2004-02-06

Applicant: Long-Hui Lin ,  Feng-Ming Kuo ,  Su-Fen Cheng

Inventor： Long-Hui Lin ,  Feng-Ming Kuo ,  Su-Fen Cheng

IPC: G06F19/00

CPC classification number: G01N21/93 ,  Y10S707/99943

Abstract: First, a wafer with a plurality of defects generated in a first semiconductor process is provided. A defect inspection is performed to detect the defects on the wafer. Then, an automatic defect classification is performed according to a predetermined defect database having a defect classification recipe generated from a second semiconductor process. After that, a verifying process is further performed by comparing the result of the automatic defect classification with that of a manual defect classification to verify the accuracy of the automatic defect classification.

Abstract translation: 首先，提供在第一半导体工艺中产生的具有多个缺陷的晶片。 执行缺陷检查以检测晶片上的缺陷。 然后，根据具有从第二半导体处理产生的缺陷分类配方的预定缺陷数据库执行自动缺陷分类。 之后，通过将自动缺陷分类的结果与手动缺陷分类的结果进行比较来进一步执行验证处理，以验证自动缺陷分类的准确性。

公开(公告)号：US20050049836A1

公开(公告)日：2005-03-03

申请号：US10708943

申请日：2004-04-02

Applicant: Long-Hui Lin

Inventor： Long-Hui Lin

IPC: G06F15/00 ,  H01L21/66

CPC classification number: H01L22/12 ,  H01J2237/2511 ,  H01J2237/2561

Abstract: A method of defect root cause analysis. First, a sample with a plurality defects thereon is provided. Then, a defect inspection is performed to detect the sizes and positions of the defects. After that, a chemical state analysis is performed, and a mapping analysis is made according to a result of the chemical state analysis. Thus, a root cause of defects can be obtained according to a result of the mapping analysis.

Abstract translation: 一种缺陷根源分析方法。 首先，提供具有多个缺陷的样品。 然后，进行缺陷检查以检测缺陷的尺寸和位置。 之后，进行化学状态分析，根据化学状态分析的结果进行映射分析。 因此，可以根据映射分析的结果获得缺陷的根本原因。