公开(公告)号：US07193698B2

公开(公告)日：2007-03-20

申请号：US11182798

申请日：2005-07-18

Applicant: Long-Hui Lin ,  Li-Yu Chan

Inventor： Long-Hui Lin ,  Li-Yu Chan

IPC: G01N21/00

CPC classification number: G01N21/9501 ,  G01N2021/945 ,  H01L22/12

Abstract: A wafer detection method. A plurality of PSL particles are sprayed on a wafer. An inspection operation is implemented on the wafer to obtain location information corresponding to a plurality of defects on the wafer, each location information corresponding to the defects comprises an error value. An inspection operation implemented on the PSL particles to obtain location information corresponding to the PSL particles. Offset location information corresponding to each defect is calculated according to the location information corresponding to each PSL particle. The error values corresponding to each defect are corrected according to the offset location information corresponding to each defect.

Abstract translation: 晶片检测方法。 将许多PSL颗粒喷涂在晶片上。 在晶片上执行检查操作以获得与晶片上的多个缺陷相对应的位置信息，与缺陷相对应的每个位置信息包括误差值。 在PSL粒子上实施的检查操作，以获得与PSL粒子对应的位置信息。 根据对应于每个PSL粒子的位置信息来计算与每个缺陷相对应的偏移位置信息。 根据对应于每个缺陷的偏移位置信息来校正与每个缺陷相对应的误差值。

公开(公告)号：US20070013900A1

公开(公告)日：2007-01-18

申请号：US11182798

申请日：2005-07-18

Applicant: Long-Hui Lin ,  Li-Yu Chan

Inventor： Long-Hui Lin ,  Li-Yu Chan

IPC: G01N21/88

CPC classification number: G01N21/9501 ,  G01N2021/945 ,  H01L22/12

Abstract: A wafer detection method. A plurality of PSL particles are sprayed on a wafer. An inspection operation is implemented on the wafer to obtain location information corresponding to a plurality of defects on the wafer, each location information corresponding to the defects comprises an error value. An inspection operation implemented on the PSL particles to obtain location information corresponding to the PSL particles. Offset location information corresponding to each defect is calculated according to the location information corresponding to each PSL particle. The error values corresponding to each defect are corrected according to the offset location information corresponding to each defect.

Abstract translation: 晶片检测方法。 将许多PSL颗粒喷涂在晶片上。 在晶片上执行检查操作以获得与晶片上的多个缺陷相对应的位置信息，与缺陷相对应的每个位置信息包括误差值。 在PSL粒子上实施的检查操作，以获得与PSL粒子对应的位置信息。 根据对应于每个PSL粒子的位置信息来计算与每个缺陷相对应的偏移位置信息。 根据对应于每个缺陷的偏移位置信息来校正与每个缺陷对应的误差值。

公开(公告)号：US20060134812A1

公开(公告)日：2006-06-22

申请号：US11213931

申请日：2005-08-30

Applicant: Long-Hui Lin ,  Hsien-Te Lo ,  Chia-Yun Chen

Inventor： Long-Hui Lin ,  Hsien-Te Lo ,  Chia-Yun Chen

IPC: H01L21/66

CPC classification number: H01L22/24

Abstract: An inspection method for a semiconductor device is disclosed. The method includes providing a semiconductor device, performing heat treatment on the semiconductor device, and inspecting the semiconductor device utilizing electron beam to acquire an analysis image. The semiconductor device comprises a substrate, a plurality of gate electrodes protruding on the substrate, a blanket dielectric layer overlying the substrate and gate electrodes, and a plurality of polycrystalline silicon plugs, respectively disposed on the substrate between the gate electrodes, in the dielectric layer. A piping defect is detected by the analysis image showing an area with voltage contrast difference.

公开(公告)号：US07132354B2

公开(公告)日：2006-11-07

申请号：US11213931

申请日：2005-08-30

Applicant: Long-Hui Lin ,  Hsien-Te Lo ,  Chia-Yun Chen

Inventor： Long-Hui Lin ,  Hsien-Te Lo ,  Chia-Yun Chen

IPC: H01L21/3205

CPC classification number: H01L22/24

Abstract: An inspection method for a semiconductor device is disclosed. The method includes providing a semiconductor device, performing heat treatment on the semiconductor device, and inspecting the semiconductor device utilizing electron beam to acquire an analysis image. The semiconductor device comprises a substrate, a plurality of gate electrodes protruding on the substrate, a blanket dielectric layer overlying the substrate and gate electrodes, and a plurality of polycrystalline silicon plugs, respectively disposed on the substrate between the gate electrodes, in the dielectric layer. A piping defect is detected by the analysis image showing an area with voltage contrast difference.

Abstract translation: 公开了一种半导体器件的检查方法。 该方法包括提供半导体器件，对半导体器件进行热处理，并利用电子束检查半导体器件以获取分析图像。 半导体器件包括衬底，在衬底上突出的多个栅电极，覆盖衬底和栅电极的覆盖电介质层，以及分别设置在栅电极之间的衬底上的多个多晶硅插塞，介于电介质层 。 通过显示具有电压对比度差的区域的分析图像来检测管道缺陷。

公开(公告)号：US20050159909A1

公开(公告)日：2005-07-21

申请号：US10707824

申请日：2004-01-15

Applicant: Long-Hui Lin

Inventor： Long-Hui Lin

IPC: G01N37/00 ,  G01R31/26 ,  G06F19/00 ,  H01L21/66

CPC classification number: H01L22/20 ,  G01R31/31718

Abstract: A method of defect review. First, a wafer with a plurality of defects is provided. A defect inspection is performed to detect the defects. An automatic defect classification is then performed to divide the defects into different defect types according to a predetermined database. A defect review is performed to review different defect types of defects which are sampled in different weights according to yield killing ratios of each defect types.

Abstract translation: 缺陷审查方法。 首先，提供具有多个缺陷的晶片。 进行缺陷检查以检测缺陷。 然后根据预定的数据库执行自动缺陷分类以将缺陷划分成不同的缺陷类型。 进行缺陷检查以根据每种缺陷类型的产量杀死率来检查以不同重量取样的不同缺陷类型的缺陷。

公开(公告)号：US07020536B2

公开(公告)日：2006-03-28

申请号：US10708059

申请日：2004-02-06

Applicant: Long-Hui Lin ,  Feng-Ming Kuo ,  Su-Fen Cheng

Inventor： Long-Hui Lin ,  Feng-Ming Kuo ,  Su-Fen Cheng

IPC: G06F19/00

CPC classification number: G01N21/93 ,  Y10S707/99943

Abstract: First, a wafer with a plurality of defects generated in a first semiconductor process is provided. A defect inspection is performed to detect the defects on the wafer. Then, an automatic defect classification is performed according to a predetermined defect database having a defect classification recipe generated from a second semiconductor process. After that, a verifying process is further performed by comparing the result of the automatic defect classification with that of a manual defect classification to verify the accuracy of the automatic defect classification.

Abstract translation: 首先，提供在第一半导体工艺中产生的具有多个缺陷的晶片。 执行缺陷检查以检测晶片上的缺陷。 然后，根据具有从第二半导体处理产生的缺陷分类配方的预定缺陷数据库执行自动缺陷分类。 之后，通过将自动缺陷分类的结果与手动缺陷分类的结果进行比较来进一步执行验证处理，以验证自动缺陷分类的准确性。

公开(公告)号：US20050080572A1

公开(公告)日：2005-04-14

申请号：US10708783

申请日：2004-03-25

Applicant: Long-Hui Lin

Inventor： Long-Hui Lin

IPC: H01L21/66 ,  G05B19/418 ,  H01L21/02 ,  G06F19/00

CPC classification number: G05B19/41875 ,  G05B2219/32187 ,  G05B2219/32196 ,  G05B2219/32211 ,  G05B2219/32222 ,  Y02P90/22 ,  Y02P90/86

Abstract: A method of defect control by daily checking. First, a patterned wafer with a plurality of first defects is provided. After performing a semiconductor process, which generates a plurality of second defects on the wafer, a defect detecting process is performed to detect the first defects and the second defects. Then, the first defects and the second defects are divided according to a predetermined database. The second defects are classified into a plurality of defect types according to the predetermined database.

Abstract translation: 一种通过日常检查进行缺陷控制的方法。 首先，提供具有多个第一缺陷的图案化晶片。 在执行在晶片上产生多个第二缺陷的半导体处理之后，执行缺陷检测处理以检测第一缺陷和第二缺陷。 然后，根据预定数据库划分第一缺陷和第二缺陷。 根据预定数据库，将第二缺陷分类为多种缺陷类型。

公开(公告)号：US07071011B2

公开(公告)日：2006-07-04

申请号：US10707824

申请日：2004-01-15

Applicant: Long-Hui Lin

Inventor： Long-Hui Lin

IPC: H01L21/00

CPC classification number: H01L22/20 ,  G01R31/31718

Abstract: A method of defect review. First, a wafer with a plurality of defects is provided. A defect inspection is performed to detect the defects. An automatic defect classification is then performed to divide the defects into different defect types according to a predetermined database. A defect review is performed to review different defect types of defects which are sampled in different weights according to yield killing ratios of each defect types.

Abstract translation: 缺陷审查方法。 首先，提供具有多个缺陷的晶片。 进行缺陷检查以检测缺陷。 然后根据预定的数据库执行自动缺陷分类以将缺陷划分成不同的缺陷类型。 进行缺陷检查以根据每种缺陷类型的产量杀死率来检查以不同重量取样的不同缺陷类型的缺陷。

公开(公告)号：US20050248756A1

公开(公告)日：2005-11-10

申请号：US10904873

申请日：2004-12-01

Applicant: Long-Hui Lin ,  Chia-Yun Chen

Inventor： Long-Hui Lin ,  Chia-Yun Chen

IPC: G01N21/00 ,  H01L21/00 ,  H01L21/66

CPC classification number: H01L21/67276 ,  H01L21/67253

Abstract: A plurality of cassettes, each having a plurality of wafers respectively having a first defect information, is selected. Each of the cassettes is then assigned to a corresponding tool having at least one reaction chamber, and the wafers are substantially equally assigned to the reaction chambers. A first process is then performed on each of the wafers in the reaction chamber. Finally, a first defect inspection process is performed on each of the wafers.

Abstract translation: 选择具有分别具有第一缺陷信息的多个晶片的多个盒。 然后将每个盒分配给具有至少一个反应室的相应工具，并且将晶片基本上等同地分配给反应室。 然后在反应室中的每个晶片上执行第一工艺。 最后，对每个晶片执行第一缺陷检查处理。

公开(公告)号：US06825119B1

公开(公告)日：2004-11-30

申请号：US10707952

申请日：2004-01-28

Applicant: Long-Hui Lin

Inventor： Long-Hui Lin

IPC: H01L21461

CPC classification number: H01L22/24 ,  G01N21/9501 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of piping defect detection is disclosed. First, a sample is provided. The sample has a silicon substrate, a plurality of electric devices disposed on the silicon substrate surface, a dielectric layer covering the electric devices and the substrate, and a polysilicon layer positioned on the dielectric layer, which is electrically connected to the electric devices through contact holes in the dielectric layer. A chemical mechanical polish process is performed to remove the polysilicon layer on the dielectric layer and parts of the dielectric layer. A wet etching process is then performed to delayer the dielectric layer. After that, the sample is inspected under an ultraviolet light irradiation for detecting the piping defects in the dielectric layer of the sample.

Abstract translation: 公开了一种管道缺陷检测方法。 首先，提供样品。 样品具有硅衬底，设置在硅衬底表面上的多个电器件，覆盖电器件和衬底的电介质层和位于电介质层上的多晶硅层，该多晶硅层通过接触电连接到电子器件 电介质层中的孔。 进行化学机械抛光工艺以去除电介质层上的多晶硅层和电介质层的部分。 然后执行湿蚀刻工艺以延迟电介质层。 之后，在紫外光照射下对样品进行检查，以检测样品的电介质层中的管道缺陷。