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    Mirror energy filter for electron beam apparatus
    1.
    发明授权
    Mirror energy filter for electron beam apparatus 有权
    电子束装置的镜面能量过滤器

    公开(公告)号：US08334508B1

    公开(公告)日：2012-12-18

    申请号：US13032273

    申请日：2011-02-22

    Applicant: Marian Mankos

    Inventor： Marian Mankos

    IPC: G01N23/04

    CPC classification number: H01J37/05 ,  H01J37/29 ,  H01J2237/0535 ,  H01J2237/057 ,  H01J2237/2511 ,  H01J2237/2522 ,  H01J2237/2538

    Abstract: One embodiment relates to an apparatus for forming an electron image using electrons with a narrow range of electron energies from an electron beam with a wide range of energies. An electron beam source is configured to generate an electron beam, and condenser lenses collimate the beam into an objective lens configured to illuminate the specimen. The illuminating electrons are scattered by the specimen and form an electron beam with a range of energies that enter a magnetic prism separator. After a 90 degree deflection, the prism separator introduces an angular dispersion that disperses the incoming electron beam according to its energy. A knife-edge plate removes either the high or low energy tail from the propagating beam. An electron lens is configured to focus the electron beam into an electron mirror so that after the reflection, the other energy tail is stopped on the same knife-edge plate. The remaining nearly monochromatic beam reenters the prism separator and is deflected toward the projection system and used to form a two-dimensional electron image on an electron detector. By adjusting the strength of the prism separator, the specific electron energy used for imaging is selected from the energy distribution of the scattered electrons. Other embodiments are also disclosed.

    Abstract translation: 一个实施例涉及使用具有宽范围能量的电子束具有窄范围电子能的电子形成电子图像的装置。 电子束源被配置为产生电子束，并且聚光透镜将光束准直成配置为照射样本的物镜。 照射的电子被样品散射并形成一个能量范围进入磁性棱镜分离器的电子束。 在90度偏转之后，棱镜分离器引入根据其能量分散入射电子束的角度色散。 刀刃板从传播梁中去除高能量或低能量尾部。 电子透镜被配置为将电子束聚焦到电子反射镜中，使得在反射之后，另一个能量尾部停止在同一个刀刃板上。 剩下的几乎单色的光束重新进入棱镜分离器并且朝向投影系统偏转，并用于在电子检测器上形成二维电子图像。 通过调整棱镜分离器的强度，用于成像的特定电子能量从散射电子的能量分布中选择。 还公开了其他实施例。

    METHOD OF DEFECT ROOT CAUSE ANALYSIS
    2.
    发明申请
    METHOD OF DEFECT ROOT CAUSE ANALYSIS 审中-公开
    缺陷根源分析方法

    公开(公告)号：US20050049836A1

    公开(公告)日：2005-03-03

    申请号：US10708943

    申请日：2004-04-02

    Applicant: Long-Hui Lin

    Inventor： Long-Hui Lin

    IPC: G06F15/00 ,  H01L21/66

    CPC classification number: H01L22/12 ,  H01J2237/2511 ,  H01J2237/2561

    Abstract: A method of defect root cause analysis. First, a sample with a plurality defects thereon is provided. Then, a defect inspection is performed to detect the sizes and positions of the defects. After that, a chemical state analysis is performed, and a mapping analysis is made according to a result of the chemical state analysis. Thus, a root cause of defects can be obtained according to a result of the mapping analysis.

    Abstract translation: 一种缺陷根源分析方法。 首先，提供具有多个缺陷的样品。 然后，进行缺陷检查以检测缺陷的尺寸和位置。 之后，进行化学状态分析，根据化学状态分析的结果进行映射分析。 因此，可以根据映射分析的结果获得缺陷的根本原因。

    Fabrication method for sample to be analyzed
    3.
    发明申请
    Fabrication method for sample to be analyzed 失效
    待分析样品的制备方法

    公开(公告)号：US20030097888A1

    公开(公告)日：2003-05-29

    申请号：US10176658

    申请日：2002-06-24

    Applicant: Mitsubishi Denki Kabushiki Kaisha

    Inventor： Yukinori Hirose

    IPC: G01N001/00

    CPC classification number: G01N1/28 ,  H01J2237/2511

    Abstract: The semiconductor substrate is removed from a wafer or a chip wherein a defect has occurred and, thereby, the surface, which faces the substrate, that contacts the semiconductor substrate in an element formation portion is exposed. A cross section of the element formation portion is exposed through the irradiation of a focused ion beam. Furthermore, a microprober is adhered to the sample and, then, the sample including a foreign substance that is considered to be a cause of defects is detached from the element formation portion. The extracted sample is moved onto a supporting base for analysis and the sample is secured to the supporting base for analysis by forming a tungsten film. Thereby, detailed information can be gained concerning a defective portion that is located, in particular, in the vicinity of the surface of the semiconductor substrate from among defective portions that have occurred in the semiconductor device.

    Abstract translation: 从发生缺陷的晶片或芯片去除半导体衬底，从而露出与元件形成部分中的与半导体衬底接触的面向衬底的表面。 元件形成部分的横截面通过照射聚焦离子束而暴露。 此外，将微孔粘附到样品上，然后将包含被认为是缺陷原因的异物的样品从元件形成部分分离。 将提取的样品移动到支撑基底上进行分析，并通过形成钨膜将样品固定到支撑基底进行分析。 由此，可以从在半导体器件中发生的缺陷部分中的特别是位于半导体衬底的表面附近的缺陷部分获得详细的信息。

    Analytical method of auger electron spectroscopy for insulating sample
    4.
    发明授权
    Analytical method of auger electron spectroscopy for insulating sample 失效
    绝缘样品螺旋电子能谱分析方法

    公开(公告)号：US5889282A

    公开(公告)日：1999-03-30

    申请号：US919154

    申请日：1997-08-28

    Applicant: Hee Seok Yang ,  Taek Jin Lim ,  Jae Sung Han

    Inventor： Hee Seok Yang ,  Taek Jin Lim ,  Jae Sung Han

    IPC: H01L21/66 ,  G01N23/227 ,  G01Q30/00 ,  H01J37/256 ,  H01J37/00

    CPC classification number: G01N23/2276 ,  H01J2237/2511

    Abstract: A method of Auger Electron Spectroscopic (AES) analysis for a surface of an insulating sample. The method is characterized by performing an AES analysis after depositing a conductive layer of a designated thickness on the surface of a sample containing an insulating layer by means of an ion beam sputtering for the purpose of the preventing charge accumulation. The conductive layer preferably is deposited to have a thickness of at least 6 .ANG. to 50 .ANG. and a beam voltage used for applying the conductive layer is at least 3 Kev. The conductive layer is made of any of iridium(Ir), chrome(Cr) and gold(Au). Because any electron charge generated on the sample is discharged via the conductive layer, the AES analysis can be performed for a sample containing an insulating layer.

    Abstract translation: 绝缘样品表面的俄歇电子能谱（AES）分析方法。 该方法的特征在于，为了防止电荷累积，通过离子束溅射，在含有绝缘层的样品的表面上沉积指定厚度的导电层之后进行AES分析。 导电层优选沉积为具有至少6安培至50埃的厚度，并且用于施加导电层的束电压为至少3Kev。 导电层由铱（Ir），铬（Cr）和金（Au）中的任一种制成。 因为在样品上产生的任何电子电荷通过导电层放电，所以可以对含有绝缘层的样品进行AES分析。

    Fabrication method for sample to be analyzed
    7.
    发明授权
    Fabrication method for sample to be analyzed 失效
    待分析样品的制备方法

    公开(公告)号：US06826971B2

    公开(公告)日：2004-12-07

    申请号：US10176658

    申请日：2002-06-24

    Applicant: Yukinori Hirose

    Inventor： Yukinori Hirose

    IPC: G01N100

    CPC classification number: G01N1/28 ,  H01J2237/2511

    Abstract: The semiconductor substrate is removed from a wafer or a chip wherein a defect has occurred and, thereby, the surface, which faces the substrate, that contacts the semiconductor substrate in an element formation portion is exposed. A cross section of the element formation portion is exposed through the irradiation of a focused ion beam. Furthermore, a microprober is adhered to the sample and, then, the sample including a foreign substance that is considered to be a cause of defects is detached from the element formation portion. The extracted sample is moved onto a supporting base for analysis and the sample is secured to the supporting base for analysis by forming a tungsten film. Thereby, detailed information can be gained concerning a defective portion that is located, in particular, in the vicinity of the surface of the semiconductor substrate from among defective portions that have occurred in the semiconductor device.

    Abstract translation: 从发生缺陷的晶片或芯片去除半导体衬底，从而露出与元件形成部分中的与半导体衬底接触的面向衬底的表面。 元件形成部分的横截面通过照射聚焦离子束而暴露。 此外，将微孔粘附到样品上，然后将包含被认为是缺陷原因的异物的样品从元件形成部分分离。 将提取的样品移动到支撑基底上进行分析，并通过形成钨膜将样品固定到支撑基底进行分析。 由此，可以从在半导体器件中发生的缺陷部分中的特别是位于半导体衬底的表面附近的缺陷部分获得详细的信息。

    Particle-optical apparatus involving detection of Auger electronics
    8.
    发明授权
    Particle-optical apparatus involving detection of Auger electronics 有权
    涉及检测俄歇电子的粒子光学装置

    公开(公告)号：US06455848B1

    公开(公告)日：2002-09-24

    申请号：US09464008

    申请日：1999-12-15

    Applicant: Marcellinus Petrus Carolus Michael Krijn ,  Alexander Henstra

    Inventor： Marcellinus Petrus Carolus Michael Krijn ,  Alexander Henstra

    IPC: G01N2300

    CPC classification number: H01J37/05 ,  H01J2237/2511

    Abstract: In a SEM it is desirable, in given circumstances, to acquire an image of the sample (14) by means of Auger electrons extracted from the sample and traveling back through the bore of the objective lens (8) in the direction opposing the direction of the primary beam. It is known to separate extracted electrons from the primary beam by positioning Wien filters (32, 34) in front of the objective lens (8), the filters being energized in such a way that they do not cause deflection of the primary beam but do deflect the secondary electrons. This technique cannot be used for Auger electrons, considering their high energy and hence much stronger fields in the Wien filters, thus causing substantial imaging aberrations in the primary beam. According to the invention a quadrupole field is applied in the same position as the fields of each Wien filter (32, 34, 36), thus ensuring that the resolution of the image of the sample (14) is not degraded by the fields of the Wien filters.

    Abstract translation: 在SEM中，在给定的情况下，期望通过从样品中提取的俄歇电子获取样品（14）的图像，并沿与物镜（8）的孔相反的方向 主梁。 已知通过将维恩滤波器（32,34）定位在物镜（8）的前面，将提取出的电子与初级束分开，滤光器以这样的方式通电，使得它们不会引起主光束的偏转，但是 偏转二次电子。 考虑到它们的高能量，因此Wien滤波器中的场强更强，因此这种技术不能用于俄歇电子。因此，在主波束中引起大量的成像像差。根据本发明，四极场应用于与 每个维恩滤波器（32,34,36），从而确保样本（14）的图像的分辨率不会被维恩滤波器的场降级。

    Charged Particle Beam Device and Image Acquisition Method
    9.
    发明公开
    Charged Particle Beam Device and Image Acquisition Method 审中-公开

    公开(公告)号：US20230402252A1

    公开(公告)日：2023-12-14

    申请号：US18208598

    申请日：2023-06-12

    Applicant: JEOL Ltd.

    Inventor： Nobuyuki Ikeo ,  Kenichi Tsutsumi

    IPC: H01J37/304 ,  H01J37/28 ,  H01J37/22

    CPC classification number: H01J37/3045 ,  H01J37/28 ,  H01J2237/2511 ,  H01J2237/2806 ,  H01J2237/2804 ,  H01J37/222

    Abstract: A charged particle beam device acquires an image by scanning a specimen with a probe formed from a charged particle beam and detects a signal emitted from the specimen. The charged particle beam device includes an optical system that forms the probe; a control unit that repeatedly performs correction processing and image acquisition processing for acquiring a frame image; and an image processing unit that generates an image of the specimen based on a plurality of the frame images. In the correction processing, the control unit acquires a reference image, and corrects the shifting of the irradiation position of the probe. The image processing unit acquires position shift information, corrects a position shift between the frame images based on the position shift information, and generates an image of the specimen based on the plurality of corrected frame images.

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