摘要:
A radiation imaging apparatus comprises a pixel region, on an insulating substrate 100, including a plurality of pixels arranged in a matrix, each pixel having a conversion element 101 that converts radiation into electric charges and a switching element 102 connected to the conversion element 101. The conversion element 101 has an upper electrode layer 119, a lower electrode layer 115, a semiconductor layer 117 arranged between the upper electrode layer 119 and the lower electrode layer 115. The upper electrode layer 119 or the lower electrode layer 115 has an opening 200 at least within a region where the semiconductor layer 117 is arranged.
摘要:
In a semiconductor device having a plurality of thin film transistors and matrix wiring lines formed on a substrate, the matrix wiring lines are electrically connected via resistors in order to prevent electrostatic destructions during a panel manufacture process and improve a manufacture yield.
摘要:
A radiation detecting apparatus according to the present invention includes: pixels including switching elements arranged on an insulating substrate and conversion elements arranged on the switching elements to convert a radiation into electric carriers, the switching elements and the conversion elements are connected with each other, the pixels two-dimensionally arranged on the insulating substrate in a matrix; gate wiring commonly connected with a plurality of switching elements arranged in a row direction on the insulating substrate; signal wiring commonly connected with a plurality of switching elements arranged in a column direction; and a plurality of insulating films arranged between the switching elements and the conversion elements, wherein at least one of the gate wiring and the signal wiring is arranged to be put between the plurality of insulating films.
摘要:
A conversion apparatus of the present invention includes a pixel region in which a plurality of pixels are arranged. The pixels are including the switching elements and the conversion elements. The pixel region includes a switching element region in which the plurality of switching elements are arranged in row and column directions, and a conversion element region in which the plurality of conversion elements are arranged in row and column directions. A plurality of signal wirings are including a second metal layer, and connected to the plurality of switching elements of the column direction. Bias wirings are including a fourth metal layer, and connected to the plurality of conversion elements. An external signal wiring is including the first metal layer outside the pixel region, and connected to the signal wirings. The external signal wiring and the bias wiring intersect each other.
摘要:
A conversion apparatus includes pixels including switching elements provided on an insulating substrate and conversion elements disposed over the switching elements and connected to the switching elements. Conductive lines are coupled to the pixels and have terminal elements for providing a connection to an external circuit. The terminal elements are disposed in a metal layer that is formed over the conversion elements. The conversion apparatus further includes a transparent conductive layer covering surfaces of the terminal elements, and a protective layer covering edges of the terminal elements and having openings.
摘要:
A radiation detecting apparatus includes plural pixels each provided with a switching element disposed on an insulating substrate and a conversion element disposed on the switching element, and plural signal wirings arranged in one direction and connected with the plural switching elements, wherein the conversion elements have electrodes separated respectively for the pixels, the switching element is connected with the electrode for each pixel, and both ends of the signal wiring, opposed to each other in a width direction, and both ends of the control wiring, opposed to each other in a width direction are disposed inside of an area of the electrode when seen from above the conversion element.
摘要:
An imaging apparatus includes a plurality of pixels disposed on an insulation substrate. Each of the pixels includes a plurality of thin-film transistors, a conversion element disposed above the TFTs, and a plurality of insulating layers disposed between the conversion element and the plurality of TFTs. The plurality of TFTs includes a reading TFT having a gate electrode electrically connected to the conversion element and a first selecting TFT electrically connected to a source electrode or a drain electrode of the reading TFT. At least one of a signal wiring, to which a signal corresponding to an electric charge obtained by conversion of incident light or radiation performed by the conversion element is transferred, and a gate wiring that supplies a driving signal to a gate electrode of the first selecting thin-film transistor, is disposed between the plurality of insulating layers.
摘要:
A conversion apparatus of the present invention includes a plurality of pixels including switching elements and conversion elements. The pixels are arranged in a pixel region including a switching element region in which switching elements are arranged in row and column directions and a conversion element region in which conversion elements are arranged in row and column directions. A plurality of wirings are including a second metal layer are connected to the plurality of switching elements of the column direction. Plural bias wirings of a fourth metal layer are connected to plural conversion elements. An external signal wiring of the fourth metal layer outside the pixel region is connected to the signal wirings. An external bias wiring of a first metal layer outside the pixel region is connected to the plurality of bias wirings. The external signal wiring and the external bias wiring intersect each other.
摘要:
To provide an optically reconfigurable logic circuit in which a mount area of an optical circuit is reduced as much as possible and a high gate density is realized.In an optically reconfigurable logic circuit 1 provided with a plurality of configuration information input circuits 6 for converting an optical signal including logic circuit configuration information into an electric signal and holding and outputting this electric signal and a logic configuration variable circuit 7 for performing logic configuration on the basis of the logic circuit configuration information, the configuration information input circuits 6 holds the logic circuit configuration information as electric charge with use of a junction capacitance and a floating capacitance of a photoconductive device P. An inter-terminal voltage of the photoconductive device P is converted into binary data by a binary circuit and output as a circuit configuration signal. Then, the logic configuration variable circuit 7 is configured to execute a logic arithmetic processing before the inter-terminal voltage of the photoconductive device P drops to be equal to or lower than a logic threshold of the binary circuit due to a leak current.
摘要:
A conversion apparatus of the present invention includes a plurality of pixels including switching elements and conversion elements. The pixels are arranged in a pixel region including a switching element region in which switching elements are arranged in row and column directions and a conversion element region in which conversion elements are arranged in row and column directions. A plurality of wirings are including a second metal layer are connected to the plurality of switching elements of the column direction. Plural bias wirings of a fourth metal layer are connected to plural conversion elements. An external signal wiring of the fourth metal layer outside the pixel region is connected to the signal wirings. An external bias wiring of a first metal layer outside the pixel region is connected to the plurality of bias wirings. The external signal wiring and the external bias wiring intersect each other.