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11.发明授权Phase shift photomask comprising a layer of aluminum oxide with magnesium oxide 失效相移光掩模，其包含氧化铝层与氧化镁
公开(公告)号：US5380608A
公开(公告)日：1995-01-10
申请号：US974919
申请日：1992-11-12
摘要： The invention is directed to a phase shift photomask for which a film made of a material capable of providing an etching stopper layer that excels in etching selectivity and can interrupt etching surely and automatically, and provides a phase shift photomask at least comprising a substrate 30 and a phase shifter pattern made of a material composed mainly of silicon oxide that is provided on the surface of the substrate directly or with an opaque layer 37 interposed therebetween, said phase shift photomask being characterized in that the surface 30 is provided on the surface with an etching stopper layer 30 that comprises a mixture of Al.sub.2 O.sub.3 with MgO, ZrO.sub.2, Ta.sub.2 O.sub.5 or HfO, or CrO.sub.x, CrN.sub.y, CrC.sub.z, CrO.sub.x N.sub.y, CrO.sub.x C.sub.z or CrO.sub.x N.sub.y C.sub.z, or MgF.sub.2-2x O.sub.y, CaF.sub.2-2x O.sub.y, LiF.sub.2-2x O.sub.y, BaF.sub.2-2x O.sub.y, La.sub.2 F.sub.6-2x O.sub.y or Ce.sub.2 F.sub.6-2x O.sub.y, whereby the etching stopper layer is allowed to etch a transparent film for a phase shifter surely and accurately, when making a phase shifter pattern by etching.
摘要翻译： 本发明涉及一种相移光掩模，其中由能够提供蚀刻选择性优异并且可以中断和自动中断蚀刻的蚀刻阻挡层的材料制成的膜，并且提供至少包括基板30的相移光掩模和 由主要由氧化硅构成的材料制成的移相器图案，其直接设置在基板的表面上，或者设置在其间的不透明层37，所述相移光掩模的特征在于，表面30设置在表面上 蚀刻阻挡层30，其包含Al 2 O 3与MgO，ZrO 2，Ta 2 O 5或HfO，或CrO x，CrN y，CrC z，CrO x N y，CrO x C z或CrO x N y C z或MgF 2 -2 x O y，CaF 2 -2 x O y，LiF 2 -2 x O y，BaF 2 -2 x O y，La 2 F 6 -2xOy或Ce2F6-2x Oy，从而当通过蚀刻制造移相器图案时，可以确切地和准确地蚀刻蚀刻停止层用于移相器的透明膜。
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公开(公告)号：US4592046A
公开(公告)日：1986-05-27
申请号：US595668
申请日：1984-04-02
CPC分类号： H04Q11/04
摘要： A click tone removing system for a time division switching system which performs switching of speech channels by a highway switch inserted in a highway. When a hook information detector and a dial information detector detect hook information and a dial information, respectively, delivery of a PCM speech sending signal to the highway is prevented by a blocking function for a fixed period of time, so that the highway is controlled to switch the speech channel, thereby removing a click tone generated by dialing. A subscriber's circuit of an exchange, which changes over a speech sending highway and a speech receiving highway by means of a highway switch, is characterized by the provision of an A/D converter for digitizing a speech sending signal to a digitized speech sending signal sent out to the speech sending highway, a D/A converter for converting a digitized speech receiving signal applied from the speech receiving highway into an analog signal, a gate for gating the input signal to the D/A converter, and a control circuit for controlling the gate, so that during real time processing the speech receiving signal highway is interrupted by opening and closing the gate without controling the higway switch.
摘要翻译： 一种用于时分切换系统的点击音消除系统，其通过插入高速公路的高速公路开关来执行语音信道的切换。 当挂钩信息检测器和拨号信息检测器检测到挂钩信息和拨号信息时，分别通过阻塞功能在一段固定的时间段内将PCM语音发送信号发送到高速公路，使得公路被控制到 切换语音通道，从而消除通过拨号产生的点击音。 通过公路交换机在语音发送高速公路和语音接收公路上改变的交换机的用户电路的特征在于，提供用于将语音发送信号数字化到发送的数字化语音发送信号的A / D转换器 用于将从语音接收公路应用的数字化语音接收信号转换成模拟信号的D / A转换器，用于将输入信号选通到D / A转换器的门，以及用于控制的控制电路 门，使得在实时处理期间，通过打开和关闭门而中断语音接收信号高速公路，而不控制高速开关。
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13.发明授权Differential comparator, and pipeline type A/D converter equipped with the same 有权差分比较器和管道型A / D转换器配备相同公开(公告)号：US07817077B2
公开(公告)日：2010-10-19
申请号：US12404835
申请日：2009-03-16
申请人： Hiroyuki Miyashita
发明人： Hiroyuki Miyashita
IPC分类号： H03M1/38
CPC分类号： H03F3/45183 , H03F2203/45702 , H03F2203/45726 , H03K3/356139
摘要： In some examples, a differential comparator includes a differential amplifier configured to output differential output signals, a first switch portion configured to input the differential output signals from the differential amplifier and output the differential output signals from output terminals while alternatively changing over the output terminals, a latch portion configured to update and latch the differential output signals from the output terminals of the first switch portion, and a second switch portion configured to input output signals from the latch portion and output the latched output signals. The first switch portion and the second switch portion are changed over complementarily so that the differential output signals from the differential amplifier are always outputted from the same first and second output terminals of the second switch portion respectively.
摘要翻译： 在一些示例中，差分比较器包括：差分放大器，被配置为输出差分输出信号;第一开关部分，被配置为从差分放大器输入差分输出信号，并且在输出端子交替地切换时输出来自输出端子的差分输出信号， 闩锁部分，被配置为更新并锁存来自第一开关部分的输出端的差分输出信号;以及第二开关部分，被配置为输入来自锁存部分的输出信号并输出锁存的输出信号。 第一开关部分和第二开关部分互补地改变，使得来自差分放大器的差分输出信号总是分别从第二开关部分的相同的第一和第二输出端子输出。
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14.发明授权
公开(公告)号：US5614336A
公开(公告)日：1997-03-25
申请号：US337136
申请日：1994-11-10
摘要： The present invention relates particularly to a process for producing phase shift layer-containing photomasks, which can produce phase shift photomasks through a reduced or limited number of steps to reduce or limit the incidence of phase shifter pattern deficiencies or other defects and at lower costs as well.For instance, a photomask blank of the structure that a substrate is provided thereon with an electrically conductive layer and a light-shielding thin film in this order is used to coat a starting material for spin-on-glass uniformly on a light-shielding pattern formed thereon. A pattern is directly drawn on the coated spin-on-glass layer with energy beams emanating from electron beam exposure hardware, etc., and the substrate is developed with a solvent after pattern drawing with energy beams to wash off an excessive spin-on-glass portion other than the spin-on-glass layer irradiated with the ionizing radiations. Finally, the post-development substrate is baked to form a phase shifter pattern.
摘要翻译： 本发明特别涉及一种用于生产含相移层的光掩模的方法，其可以通过减少或限制数量的步骤产生相移光掩模，以减少或限制移相器图案缺陷或其它缺陷的发生，并以较低的成本 好。 例如，使用具有依次设置有导电层和遮光薄膜的基板的结构的光掩模坯料，以均匀地在遮光图案上涂布旋涂玻璃原料 形成在其上。 通过电子束曝光硬件等发出的能量束，直接在涂覆的旋涂玻璃层上绘制图案，在用能量束进行图案绘制之后，用溶剂对基板进行显影，以洗涤过量的自旋 - 除了用电离辐射照射的旋涂玻璃层以外的玻璃部分。 最后，烘烤后显影衬底以形成移相器图案。
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公开(公告)号：US20070292598A1
公开(公告)日：2007-12-20
申请号：US11667945
申请日：2006-04-04
申请人： Kunihiro Tada , Hiroyuki Miyashita , Isao Gunji
发明人： Kunihiro Tada , Hiroyuki Miyashita , Isao Gunji
IPC分类号： C23C16/46 , H01L21/02 , H01L21/285
CPC分类号： C23C16/46 , C23C16/52 , H01L21/67248 , H01L22/10
摘要： Disclosed is a substrate processing method wherein the infrared absorptance or infrared transmittance of a substrate to be processed is measured in advance, and the substrate is processed according to the measured value while independently controlling temperatures at least in a first region located in the central part of the substrate and in a second region around the first region using temperature control means which are respectively provided for the first region and the second region and can be controlled independently from each other.
摘要翻译： 公开了一种基板处理方法，其中预先测量待处理的基板的红外吸收率或红外线透射率，并且根据测量值对基板进行处理，同时至少在位于中心部分的第一区域中独立地控制温度 基板和在第一区域周围的第二区域中，使用分别设置用于第一区域和第二区域并且可以彼此独立地控制的温度控制装置。
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公开(公告)号：US20070004643A1
公开(公告)日：2007-01-04
申请号：US10582015
申请日：2004-12-08
CPC分类号： C07D213/30 , C07C271/22 , C07C2601/02 , C07C2601/04 , C07C2602/08 , C07D295/215 , C07D307/20 , C07D309/12
摘要： The present invention provides a compound represented by the formula (I): (wherein R1 is a lower alkyl substituted by a lower alkoxy or a heterocyclic group, or a heterocyclic group; R2 is a lower alkyl optionally substituted by a phenyl; and R3 is a lower alkyl optionally substituted by a halogen, a lower alkoxy or a phenyl, or a fused polycyclic hydrocarbon group), which is well absorbed orally, exhibits durability of good blood level and has potent calpain inhibitory activity.
摘要翻译： 本发明提供由式（I）表示的化合物：其中R 1是被低级烷氧基或杂环基或杂环基取代的低级烷基; R 2， / SUP>是任选被苯基取代的低级烷基; R 3是任选被卤素，低级烷氧基或苯基或稠合多环烃基取代的低级烷基，其是 良好的口腔吸收，具有良好的血液水平的耐久性，并具有强大的钙蛋白酶抑制活性。
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17.发明授权Halftone phase shift photomask, halftone phase shift photomask blank, and method of producing the same 失效半色调相移光掩模，半色调相移光掩模坯料及其制造方法
公开(公告)号：US5916712A
公开(公告)日：1999-06-29
申请号：US6587
申请日：1998-01-13
摘要： A halftone phase shift photomask having a sufficiently high transmittance for light of short wavelength and usable for high-resolution lithography effected by exposure using deep-ultraviolet+radiation, e.g., krypton fluoride excimer laser light. The halftone phase shift photomask has on a transparent substrate a halftone phase shift layer which includes at least one layer composed mainly of a chromium compound. The chromium compound contains at least fluorine atoms in addition to chromium atoms. A transmittance higher than a predetermined level can be obtained even in exposure carried out a relatively short wavelength. The photomask can be used for exposure using deep-ultraviolet+radiation, e.g., krypton fluoride excimer laser light (wavelength: 248 nm). Thus, high-resolution lithography can be realized. Since the photomask can be formed by approximately the same method as in the case of the conventional photomasks, it is possible to improve the yield and reduce the cost.
摘要翻译： 对于短波长的光具有足够高透射率的半色调相移光掩模，可用于通过使用深紫外线+辐射的曝光（例如，氪氟化物准分子激光）进行的高分辨率光刻。 半色调相移光掩模在透明基板上具有半色调相移层，其包括至少一层主要由铬化合物组成的层。 除铬原子以外，铬化合物至少含有氟原子。 即使在相对短的波长下进行曝光，也可以获得高于预定水平的透射率。 光掩模可以用于使用深紫外线+辐射的曝光，例如氟化氪激光准分子激光（波长：248nm）。 因此，可以实现高分辨率光刻。 由于光掩模可以通过与常规光掩模的情况大致相同的方法形成，所以可以提高成品率并降低成本。
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公开(公告)号：US5723234A
公开(公告)日：1998-03-03
申请号：US608065
申请日：1996-02-28
IPC分类号： G03F1/32 , G03F1/68 , G03F1/80 , G03F7/36 , H01L21/027 , H01L21/302 , H01L21/3065 , G03F9/00
摘要： A phase shift photomask capable of being produced by dry etching with adequate in-plane uniformity of pattern dimension even if there is a large difference in exposed area ratio between different areas on the mask. In a phase shift photomask having an area provided with a phase shift layer which practically shifts the phase relative to another area, a dummy etching pattern (13) for dry etch rate correction is provided in an area other than a pattern exposure area (9 and 10), or a dummy etching pattern for dry etch rate correction having a size less than the limit of resolution attained by transfer is provided in the pattern exposure area, thereby reducing the etch rate nonuniformity due to the pattern density variation in the process of dry etching the phase shift photomask, and thus providing a phase shift photomask of high accuracy.
摘要翻译： 即使在掩模上的不同区域之间的曝光面积比存在很大差异的情况下，能够通过干蚀刻产生具有足够的图案尺寸的面内均匀性的相移光掩模。 在具有实质上相对于另一区域偏移的相移层的区域的相移光掩模中，在除了图案曝光区域（9和9）之外的区域中提供用于干蚀刻速率校正的伪蚀刻图案（13） 或者在图案曝光区域中提供具有小于通过转印获得的分辨率的分辨率的干蚀刻速率校正的虚拟蚀刻图案，从而降低由于干燥过程中图案密度变化引起的蚀刻速率不均匀性 蚀刻相移光掩模，从而提供高精度的相移光掩模。
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19.发明授权Blanks for halftone phase shift photomasks, halftone phase shift photomasks, and methods for fabricating them 失效半色调相移光掩模的空白，半色调相移光掩模及其制造方法
公开(公告)号：US5721075A
公开(公告)日：1998-02-24
申请号：US783829
申请日：1997-01-13
申请人： Keiji Hashimoto , Junji Fujikawa , Hiroshi Mohri , Masahiro Takahashi , Hiroyuki Miyashita , Yukio Iimura
发明人： Keiji Hashimoto , Junji Fujikawa , Hiroshi Mohri , Masahiro Takahashi , Hiroyuki Miyashita , Yukio Iimura
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32
摘要： The invention relates a halftone phase shift photomask and a blank therefor, which enables the transmittance of a phase shift portion to be varied even after blank or photomask fabrication, can accommodate to a variety of patterns, and can be fabricated on a mass scale. The exposure light transmittance of a halftone phase shift layer is arbitrarily variable within the range of 1% to 50%, inclusive, by exposing the blank or photomask to a high temperature elevated to at least 150.degree. C., to an oxidizing atmosphere, or to a reducing atmosphere at a step that can provided independent of the steps for film-forming or photomask fabrication step. This enables the exposure light transmittance of the halftone phase shift layer to be changed to any desired value after blank or photomask fabrication, and so an optimal halftone phase shift photomask to be obtained depending on the size, area, location, shape, and the like of the transferred pattern.
摘要翻译： 本发明涉及一种半色调相移光掩模及其空白处理，即使在空白或光掩模制造之后，相移部分的透射率也能够变化，可以适应各种图案，并且可以大规模制造。 半色调相变层的曝光透光率可以在1％至50％的范围内任意变化，包括在内，将空白或光掩模暴露于升高至少150℃的高温至氧化气氛，或 在可以独立于成膜或光掩模制造步骤的步骤的步骤中进行还原气氛。 这使得半色调相移层的曝光光透射率在空白或光掩模制造之后变为任何期望值，因此根据尺寸，面积，位置，形状等获得最佳半色调相移光掩模 的转移模式。
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20.发明授权
公开(公告)号：US5688617A
公开(公告)日：1997-11-18
申请号：US644856
申请日：1996-05-09
摘要： The present invention relates particularly to a process for producing phase shift layer-containing photomasks, which can produce phase shift photomasks through a reduced or limited number of steps to reduce or limit the incidence of phase shifter pattern deficiencies or other defects and at lower costs as well. For instance, a photomask blank of the structure that a substrate is provided thereon with an electrically conductive layer and a light-shielding thin film in this order is used to coat a starting material for spin-on-glass uniformly on a light-shielding pattern formed thereon. A pattern is directly drawn on the coaxed-spin-on-glass layer with energy beams emanating from electron beam exposure hardware, etc., and the substrate is developed with a solvent after pattern drawing with energy beams to wash off an excessive spin-on-glass portion other than the spin-on-glass layer irradiated with the ionizing radiations. Finally, the post-development substrate is baked to form a phase shifter pattern.
摘要翻译： 本发明特别涉及一种用于生产含相移层的光掩模的方法，其可以通过减少或限制数量的步骤产生相移光掩模，以减少或限制移相器图案缺陷或其它缺陷的发生，并以较低的成本 好。 例如，使用具有依次设置有导电层和遮光薄膜的基板的结构的光掩模坯料，以均匀地在遮光图案上涂布旋涂玻璃原料 形成在其上。 通过从电子束曝光硬件等发出的能量束，在哄骗的旋涂玻璃层上直接绘制图案，并且在用能量束进行图案绘制之后，用溶剂对基板进行显影，以洗涤过度旋转 除了用电离辐射照射的旋涂玻璃层以外的玻璃部分。 最后，烘烤后显影衬底以形成移相器图案。
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