公开(公告)号：US20070292598A1

公开(公告)日：2007-12-20

申请号：US11667945

申请日：2006-04-04

申请人： Kunihiro Tada ,  Hiroyuki Miyashita ,  Isao Gunji

发明人： Kunihiro Tada ,  Hiroyuki Miyashita ,  Isao Gunji

IPC分类号： C23C16/46 ,  H01L21/02 ,  H01L21/285

CPC分类号： C23C16/46 ,  C23C16/52 ,  H01L21/67248 ,  H01L22/10

摘要： Disclosed is a substrate processing method wherein the infrared absorptance or infrared transmittance of a substrate to be processed is measured in advance, and the substrate is processed according to the measured value while independently controlling temperatures at least in a first region located in the central part of the substrate and in a second region around the first region using temperature control means which are respectively provided for the first region and the second region and can be controlled independently from each other.

摘要翻译： 公开了一种基板处理方法，其中预先测量待处理的基板的红外吸收率或红外线透射率，并且根据测量值对基板进行处理，同时至少在位于中心部分的第一区域中独立地控制温度 基板和在第一区域周围的第二区域中，使用分别设置用于第一区域和第二区域并且可以彼此独立地控制的温度控制装置。

公开(公告)号：US08124168B2

公开(公告)日：2012-02-28

申请号：US11667945

申请日：2006-04-04

申请人： Kunihiro Tada ,  Hiroyuki Miyashita ,  Isao Gunji

发明人： Kunihiro Tada ,  Hiroyuki Miyashita ,  Isao Gunji

IPC分类号： C23C16/46

CPC分类号： C23C16/46 ,  C23C16/52 ,  H01L21/67248 ,  H01L22/10

摘要： Disclosed is a substrate processing method wherein the infrared absorptance or infrared transmittance of a substrate to be processed is measured in advance, and the substrate is processed according to the measured value while independently controlling temperatures at least in a first region located in the central part of the substrate and in a second region around the first region using temperature control means which are respectively provided for the first region and the second region and can be controlled independently from each other.

摘要翻译： 公开了一种基板处理方法，其中预先测量待处理的基板的红外吸收率或红外线透射率，并且根据测量值对基板进行处理，同时至少在位于中心部分的第一区域中独立地控制温度 基板和在第一区域周围的第二区域中，使用分别设置用于第一区域和第二区域并且可以彼此独立地控制的温度控制装置。

公开(公告)号：US20050211167A1

公开(公告)日：2005-09-29

申请号：US10517345

申请日：2003-06-09

申请人： Isao Gunji ,  Tadahiro Ishizaka ,  Hiroshi Kannan ,  Ikuo Sawada ,  Yasuhiko Kojima

发明人： Isao Gunji ,  Tadahiro Ishizaka ,  Hiroshi Kannan ,  Ikuo Sawada ,  Yasuhiko Kojima

IPC分类号： C23C16/44 ,  C30B25/14 ,  H01L21/285 ,  C23C16/00

CPC分类号： C30B25/14 ,  C23C16/44 ,  H01L21/28562

摘要： The ceiling surface (12b) of a chamber (12) is substantially entirely formed with a gas supply port (19). Further, the gas supply port (19) has shower head (20) fitted therein. The peripheral edge of the ceiling surface (12b) has connected thereto a second side wall (12d) forming an angle greater than 90 degrees with ceiling surface (12b). Further, the side surface of a susceptor (16) is formed such that it forms an angle greater than 90 degrees with a mounting surface for a wafer (W) and is substantially parallel with the second side wall (12d) of the chamber (12). Further, the susceptor (16) is disposed such that the distance (L2) between its side surface and the second side wall (12d) is greater than the distance (L1) between the shower head (20) and the wafer (W).

摘要翻译： 室（12）的顶表面（12b）基本上完全由气体供给口（19）形成。 此外，气体供给口（19）具有嵌入其中的喷头（20）。 天花板表面（12b）的周缘连接有形成与天花板表面（12b）大于90度的角度的第二侧壁（12d）。 此外，基座（16）的侧表面形成为与晶片（W）的安装表面形成大于90度的角度并且基本上平行于腔室的第二侧壁（12d） 12）。 此外，基座（16）设置成使得其侧表面和第二侧壁（12d）之间的距离（L 2）大于喷头（20）和晶片（20）之间的距离（L 1） W）。

公开(公告)号：US08551565B2

公开(公告)日：2013-10-08

申请号：US12811185

申请日：2008-12-25

申请人： Isao Gunji ,  Hidenori Miyoshi ,  Hitoshi Itoh

发明人： Isao Gunji ,  Hidenori Miyoshi ,  Hitoshi Itoh

IPC分类号： C23C16/18

CPC分类号： C23C16/18 ,  C23C16/4488 ,  C23C18/08 ,  H01L21/28556 ,  H01L21/288

摘要： Disclosed is a film forming method including the steps of: producing a monovalent carboxylic acid metal salt gas by reacting a bivalent carboxylic acid metal salt with a carboxylic acid; supplying the monovalent carboxylic acid metal salt gas on a substrate to accumulate a monovalent carboxylic acid metal salt film; and decomposing the monovalent carboxylic acid metal salt film by supplying energy to the substrate formed with the monovalent carboxylic acid metal salt film so as to form a metallic film.

摘要翻译： 公开了一种成膜方法，其包括以下步骤：通过使二价羧酸金属盐与羧酸反应制备单价羧酸金属盐气体; 将一价羧酸金属盐气体供给到基板上以积累单价羧酸金属盐膜; 并通过向形成有一元羧酸金属盐膜的基板供给能量来分解单价羧酸金属盐膜，以形成金属膜。

公开(公告)号：US20080000416A1

公开(公告)日：2008-01-03

申请号：US11747647

申请日：2007-05-11

申请人： Hidenori Miyoshi ,  Isao Gunji ,  Hitoshi Itoh

发明人： Hidenori Miyoshi ,  Isao Gunji ,  Hitoshi Itoh

IPC分类号： C23C14/00 ,  C23C26/00

CPC分类号： C23C16/4488 ,  C23C16/06

摘要： A film formation method is arranged to react carboxylic acid with an oxygen-containing metal compound to produce carboxylate salt gas of a metal of the metal compound. The method then supplies the carboxylate salt gas of the metal onto a substrate. The method applies energy to the substrate to decompose the carboxylate salt of the metal supplied onto the substrate, thereby forming a metal film.

摘要翻译： 布置成膜方法使羧酸与含氧金属化合物反应，生成金属化合物的金属的羧酸盐气体。 该方法然后将金属的羧酸盐气体提供到基底上。 该方法对基材施加能量以分解供应到基材上的金属的羧酸盐，从而形成金属膜。

公开(公告)号：US20070134919A1

公开(公告)日：2007-06-14

申请号：US11608504

申请日：2006-12-08

申请人： Isao Gunji ,  Yumiko Kawano

发明人： Isao Gunji ,  Yumiko Kawano

IPC分类号： H01L21/44

CPC分类号： H01L21/28562 ,  C23C16/16 ,  C23C16/18 ,  C23C16/34 ,  C23C16/452 ,  C23C16/45534 ,  C23C16/45548 ,  C23C16/45557 ,  C23C16/46

摘要： A film forming method, for depositing a thin film on a surface of a substrate mounted on a mounting table disposed in a vacuum processing chamber, includes an adsorption process for adsorbing a film forming material on the substrate by introducing a source gas into the processing chamber; and a reaction process for carrying out a film forming reaction, after the adsorption process, by introducing an energy transfer gas into the processing chamber and supplying thermal energy to the film forming material adsorbed on the substrate. By repeating the above process, the thin film is formed on the substrate in a layer-by-layer manner.

摘要翻译： 一种薄膜形成方法，用于在安装在设置在真空处理室中的安装台上的基板的表面上沉积薄膜，包括通过将源气体引入处理室中而将成膜材料吸附在基板上的吸附工艺 ; 以及在吸附过程之后，通过将能量转移气体引入处理室并向吸附在基板上的成膜材料提供热能的反应方法进行成膜反应。 通过重复上述处理，薄膜以层叠的方式形成在基板上。

公开(公告)号：US08562751B2

公开(公告)日：2013-10-22

申请号：US13351641

申请日：2012-01-17

申请人： Isao Gunji ,  Yusaku Izawa ,  Hitoshi Itoh ,  Tomonori Umezaki ,  Yuta Takeda ,  Isamu Mori

发明人： Isao Gunji ,  Yusaku Izawa ,  Hitoshi Itoh ,  Tomonori Umezaki ,  Yuta Takeda ,  Isamu Mori

IPC分类号： C23G1/00

CPC分类号： C23C16/4405

摘要： A dry cleaning method of a substrate processing apparatus includes forming a metal oxide by oxidizing a metal film adhered to the inside of a processing chamber of the substrate processing apparatus; forming a complex by reacting the metal oxide with β-diketone; and sublimating the complex to be removed. A cleaning gas containing oxygen and β-diketone is supplied into the processing chamber while heating the inside of the processing chamber. A flow rate ratio of oxygen to β-diketone in the cleaning gas is set such that a formation rate of the metal oxide is lower than a formation rate of the complex.

摘要翻译： 基板处理装置的干洗方法包括通过氧化附着在基板处理装置的处理室内部的金属膜来形成金属氧化物; 通过使金属氧化物与β-二酮反应形成络合物; 并升华待除去的复合物。 含有氧和β-二酮的清洁气体在加热处理室内部的同时被供给到处理室中。 清洗气体中氧与β-二酮的流量比设定为使得金属氧化物的生成速度低于配合物的形成速度。

公开(公告)号：US08419856B2

公开(公告)日：2013-04-16

申请号：US13547689

申请日：2012-07-12

申请人： Isao Gunji

发明人： Isao Gunji

IPC分类号： C23C16/00 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： H01L21/67115 ,  C23C16/452 ,  C23C16/4557 ,  C23C16/45578 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522

摘要： Disclosed is a substrate processing apparatus in which a plurality of rod-like ceramic heaters are arranged in the form of islands and affixed to the top plate of a process chamber so as to face a wafer, and the lower end portion of each ceramic heater is provided with a metal catalyst layer in such a manner that the metal catalyst layer faces a gas discharge hole of a gas diffusion plate. Consequently, the metal catalyst layer is indirectly heated by the ceramic heater (a resistance heating wire), thereby activating a processing gas.

摘要翻译： 公开了一种基板处理装置，其中多个棒状陶瓷加热器以岛形式布置并固定到处理室的顶板以面对晶片，并且每个陶瓷加热器的下端部分为 设置有金属催化剂层，使得金属催化剂层面对气体扩散板的气体排出孔。 因此，金属催化剂层被陶瓷加热器（电阻加热丝）间接加热，从而激活处理气体。

公开(公告)号：US07582544B2

公开(公告)日：2009-09-01

申请号：US11608504

申请日：2006-12-08

申请人： Isao Gunji ,  Yumiko Kawano

发明人： Isao Gunji ,  Yumiko Kawano

IPC分类号： H01L21/36

CPC分类号： H01L21/28562 ,  C23C16/16 ,  C23C16/18 ,  C23C16/34 ,  C23C16/452 ,  C23C16/45534 ,  C23C16/45548 ,  C23C16/45557 ,  C23C16/46

摘要： A film forming method, for depositing a thin film on a surface of a substrate mounted on a mounting table disposed in a vacuum processing chamber, includes an adsorption process for adsorbing a film forming material on the substrate by introducing a source gas into the processing chamber; and a reaction process for carrying out a film forming reaction, after the adsorption process, by introducing an energy transfer gas into the processing chamber and supplying thermal energy to the film forming material adsorbed on the substrate. By repeating the above process, the thin film is formed on the substrate in a layer-by-layer manner.

摘要翻译： 一种薄膜形成方法，用于在安装在设置在真空处理室中的安装台上的基板的表面上沉积薄膜，包括通过将源气体引入处理室中而将成膜材料吸附在基板上的吸附工艺 ; 以及在吸附过程之后，通过将能量转移气体引入处理室并向吸附在基板上的成膜材料提供热能的反应方法进行成膜反应。 通过重复上述处理，薄膜以层叠的方式形成在基板上。

公开(公告)号：US08029856B2

公开(公告)日：2011-10-04

申请号：US11747647

申请日：2007-05-11

申请人： Hidenori Miyoshi ,  Isao Gunji ,  Hitoshi Itoh

发明人： Hidenori Miyoshi ,  Isao Gunji ,  Hitoshi Itoh

IPC分类号： B05D3/02

CPC分类号： C23C16/4488 ,  C23C16/06

摘要： A film formation method is arranged to react carboxylic acid with an oxygen-containing metal compound to produce carboxylate salt gas of a metal of the metal compound. The method then supplies the carboxylate salt gas of the metal onto a substrate. The method applies energy to the substrate to decompose the carboxylate salt of the metal supplied onto the substrate, thereby forming a metal film.

摘要翻译： 布置成膜方法使羧酸与含氧金属化合物反应，生成金属化合物的金属的羧酸盐气体。 该方法然后将金属的羧酸盐气体提供到基底上。 该方法对基材施加能量以分解供应到基材上的金属的羧酸盐，从而形成金属膜。