公开(公告)号：US5721075A

公开(公告)日：1998-02-24

申请号：US783829

申请日：1997-01-13

申请人： Keiji Hashimoto ,  Junji Fujikawa ,  Hiroshi Mohri ,  Masahiro Takahashi ,  Hiroyuki Miyashita ,  Yukio Iimura

发明人： Keiji Hashimoto ,  Junji Fujikawa ,  Hiroshi Mohri ,  Masahiro Takahashi ,  Hiroyuki Miyashita ,  Yukio Iimura

IPC分类号： G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/32

摘要： The invention relates a halftone phase shift photomask and a blank therefor, which enables the transmittance of a phase shift portion to be varied even after blank or photomask fabrication, can accommodate to a variety of patterns, and can be fabricated on a mass scale. The exposure light transmittance of a halftone phase shift layer is arbitrarily variable within the range of 1% to 50%, inclusive, by exposing the blank or photomask to a high temperature elevated to at least 150.degree. C., to an oxidizing atmosphere, or to a reducing atmosphere at a step that can provided independent of the steps for film-forming or photomask fabrication step. This enables the exposure light transmittance of the halftone phase shift layer to be changed to any desired value after blank or photomask fabrication, and so an optimal halftone phase shift photomask to be obtained depending on the size, area, location, shape, and the like of the transferred pattern.

摘要翻译： 本发明涉及一种半色调相移光掩模及其空白处理，即使在空白或光掩模制造之后，相移部分的透射率也能够变化，可以适应各种图案，并且可以大规模制造。 半色调相变层的曝光透光率可以在1％至50％的范围内任意变化，包括在内，将空白或光掩模暴露于升高至少150℃的高温至氧化气氛，或 在可以独立于成膜或光掩模制造步骤的步骤的步骤中进行还原气氛。 这使得半色调相移层的曝光光透射率在空白或光掩模制造之后变为任何期望值，因此根据尺寸，面积，位置，形状等获得最佳半色调相移光掩模 的转移模式。

公开(公告)号：US5538816A

公开(公告)日：1996-07-23

申请号：US225905

申请日：1994-04-11

申请人： Keiji Hashimoto ,  Junji Fujikawa ,  Hiroshi Mohri ,  Masahiro Takahashi ,  Hiroyuki Miyashita ,  Yukio Iimura

发明人： Keiji Hashimoto ,  Junji Fujikawa ,  Hiroshi Mohri ,  Masahiro Takahashi ,  Hiroyuki Miyashita ,  Yukio Iimura

IPC分类号： G03F1/00 ,  G03F9/00

CPC分类号： G03F1/32 ,  Y10T428/24868

摘要： A halftone phase shift photomask designed so that it is possible to shorten the photoengraving process, use a production line for a conventional photomask, prevent lowering of the contract between the transparent and semitransparent regions at a long wavelength in the visible region, which is used for inspection and measurement, and also prevent charge-up during electron beam exposure, and that ordinary physical cleaning process can be used for the halftone phase shift photomask. The halftone phase shift photomask has on a transparent substrate (1) a region which is semitransparent to exposure light and a region which is transparent to the exposure light so that the phase difference between light passing through the transparent region and light passing through the semitransparent region is substantially .pi. radians. A semitransparent film that constitutes the semitransparent region is arranged in the form of a multilayer film including layers (3, 4) of chromium or a chromium compound. For example, the layer (3) is formed of chromium oxide, chromium oxide nitride, chromium oxide carbide, or chromium oxide nitride carbide, and the layer (4) is formed of chromium or chromium nitride. The layer (3) mainly serves as a phase shift layer, while the layer (4) mainly serves as a transmittance control layer that suppresses the rise of transmittance at the long wavelength side. The semitransparent film is formed by physical vapor deposition.

摘要翻译： 设计成可以缩短光刻工艺的半色调相移光掩模，使用用于常规光掩模的生产线，防止在可见光区域的长波长处的透明区域和半透明区域之间的收缩降低，其用于 检查和测量，并且还防止电子束暴露期间的充电，并且普通的物理清洁过程可用于半色调相移光掩模。 半色调相移光掩模在透明基板（1）上具有与曝光光半透明的区域和对曝光光透明的区域，使得通过透明区域的光与通过半透明区域的光之间的相位差 基本上是pi弧度。 构成半透明区域的半透明膜以包含铬或铬化合物的层（3,4）的多层膜的形式排列。 例如，层（3）由氧化铬，氧化铬氮化物，氧化铬碳化物或氧化铬氮化物构成，层（4）由铬或氮化铬形成。 层（3）主要用作相移层，而层（4）主要用作抑制长波长侧的透射率上升的透射率控制层。 半透明膜通过物理气相沉积形成。

公开(公告)号：US5614335A

公开(公告)日：1997-03-25

申请号：US282465

申请日：1994-08-01

申请人： Keiji Hashimoto ,  Junji Fujikawa ,  Hiroshi Mohri ,  Masahiro Takahashi ,  Hiroyuki Miyashita ,  Yukio Iimura

发明人： Keiji Hashimoto ,  Junji Fujikawa ,  Hiroshi Mohri ,  Masahiro Takahashi ,  Hiroyuki Miyashita ,  Yukio Iimura

IPC分类号： G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/32

摘要： The invention relates a halftone phase shift photomask and a blank therefor, which enables the transmittance of a phase shift portion to be varied even after blank or photomask fabrication, can accommodate to a variety of patterns, and can be fabricated on a mass scale. The exposure light transmittance of a halftone phase shift layer is arbitrarily variable within the range of 1% to 50%, inclusive, by exposing the blank or photomask to a high temperature elevated to at least 150.degree. C., to an oxidizing atmosphere, or to a reducing atmosphere at a step that can provided independent of the steps for film-forming or photomask fabrication step. This enables the exposure light transmittance of the halftone phase shift layer to be changed to any desired value after blank or photomask fabrication, and so an optimal halftone phase shift photomask to be obtained depending on the size, area, location, shape, and the like of the transferred pattern.

摘要翻译： 本发明涉及一种半色调相移光掩模及其空白处理，即使在空白或光掩模制造之后，相移部分的透射率也能够变化，可以适应各种图案，并且可以大规模制造。 半色调相变层的曝光透光率可以在1％至50％的范围内任意变化，包括在内，将空白或光掩模暴露于升高至少150℃的高温至氧化气氛，或 在可以独立于成膜或光掩模制造步骤的步骤的步骤中进行还原气氛。 这使得半色调相移层的曝光光透射率在空白或光掩模制造之后变为任何期望值，因此根据尺寸，面积，位置，形状等获得最佳半色调相移光掩模 的转移模式。

公开(公告)号：US5592317A

公开(公告)日：1997-01-07

申请号：US576138

申请日：1995-12-21

申请人： Junji Fujikawa ,  Yukio Iimura ,  Masahiro Takahashi ,  Takashi Nishimoto ,  Hiroyuki Matsui ,  Masanobu Fujita

发明人： Junji Fujikawa ,  Yukio Iimura ,  Masahiro Takahashi ,  Takashi Nishimoto ,  Hiroyuki Matsui ,  Masanobu Fujita

IPC分类号： G02B5/20 ,  G02F1/1335 ,  G03F1/00

CPC分类号： G02F1/133512 ,  G03F7/0007

摘要： A chromium blank for forming a black matrix-screen to be used as a color filter for a liquid crystal display is formed by forming at least a first antireflection film, a second antireflection film and a screening film sequentially in that order on one major surface of a transparent substrate. Each of the first and the second antireflection film is a semitransparent film formed of a chromium compound or a chromium mixture, containing chromium as a principal component, and the screening film is formed of chromium, a chromium compound containing chromium as a principal component. The transparent substrate, the first antireflection film, the second antireflection film and the screening film meet an inequality: n.sub.s

摘要翻译： 用于形成用作液晶显示器的滤色器的黑色矩阵屏的铬坯通过在至少一个主表面依次形成至少第一防反射膜，第二抗反射膜和屏蔽膜 透明基材。 第一和第二抗反射膜中的每一个是由以铬为主要成分的铬化合物或铬混合物形成的半透明膜，筛选膜由以铬为主要成分的铬化合物形成。 透明衬底，第一抗反射膜，第二抗反射膜和屏蔽膜满足不等式：ns

公开(公告)号：US20090220867A1

公开(公告)日：2009-09-03

申请号：US12066203

申请日：2006-09-19

申请人： Junji Fujikawa ,  Shu Shimada ,  Yuuichi Yoshida ,  Shiho Sasaki ,  Tsuyoshi Amano ,  Kimio Ito ,  Nobuhito Toyama ,  Hiroshi Mohri

发明人： Junji Fujikawa ,  Shu Shimada ,  Yuuichi Yoshida ,  Shiho Sasaki ,  Tsuyoshi Amano ,  Kimio Ito ,  Nobuhito Toyama ,  Hiroshi Mohri

IPC分类号： G03F1/00

CPC分类号： G03F1/46 ,  G03F1/50

摘要： The invention provides a gradated photomask for reducing photolithography steps and its fabrication process, which make use of a generally available photomask blank, prevents the reflectance of a light shield film from growing high, makes alignment easy during the formation of a semitransparent film, and enables the semitransparent film on a light shield pattern with good step coverage. A photomask (100) comprises a mixture of a light shield area including a light shield film (114) having a desired pattern on a transparent substrate wherein a film forming the pattern is substantially opaque to photolithographic light, a semitransparent film (113) that transmits the photolithographic light at a desired transmittance, and the light shield film (114) and the semitransparent film (113) are stacked on the transparent substrate (101) in that order; a semi-transparent area wherein there is only the semitransparent film (113); and a transmissive area there is neither the light shield film (114) nor the semitransparent film (113), and is characterized in that the semitransparent film (113) has an antireflection function with respect to the photolithographic light.

摘要翻译： 本发明提供了一种用于减少光刻步骤的渐变光掩模及其制造工艺，其使用通常可获得的光掩模坯料防止遮光膜的反射率增长，使得在形成半透明膜期间容易对准，并且使得能够 半透明薄膜在遮光罩上具有良好的台阶覆盖率。 光掩模（100）包括在透明基板上包括具有期望图案的遮光膜（114）的遮光区域的混合物，其中形成图案的膜对光刻光基本上不透明;透射膜（113），透射膜 所述透光性的光刻光以及遮光膜（114）和半透明膜（113）依次层叠在透明基板（101）上; 半透明区域，其中仅有半透明膜（113）; 透光区域既不存在遮光膜（114）也不存在半透明膜（113），其特征在于，半透明膜（113）相对于光刻光具有防反射功能。

公开(公告)号：US08124301B2

公开(公告)日：2012-02-28

申请号：US12066203

申请日：2006-09-19

申请人： Junji Fujikawa ,  Shu Shimada ,  Yuuichi Yoshida ,  Shiho Sasaki ,  Tsuyoshi Amano ,  Kimio Ito ,  Nobuhito Toyama ,  Hiroshi Mohri

发明人： Junji Fujikawa ,  Shu Shimada ,  Yuuichi Yoshida ,  Shiho Sasaki ,  Tsuyoshi Amano ,  Kimio Ito ,  Nobuhito Toyama ,  Hiroshi Mohri

IPC分类号： G03F1/00 ,  G03F9/00

CPC分类号： G03F1/46 ,  G03F1/50

摘要： The invention provides a gradated photomask for reducing photolithography steps and its fabrication process, which make use of a generally available photomask blank, prevents the reflectance of a light shield film from growing high, makes alignment easy during the formation of a semitransparent film, and enables the semi-transparent film on a light shield pattern with good step coverage. A photomask (100) comprises a mixture of a light shield area including a light shield film (114) having a desired pattern on a transparent substrate wherein a film forming the pattern is substantially opaque to photolithographic light, a semitransparent film (113) that transmits the photolithographic light at a desired transmittance, and the light shield film (114) and the semitransparent film (113) are stacked on the transparent substrate (101) in that order; a semi-transparent area wherein there is only the semitransparent film (113); and a transmissive area there is neither the light shield film (114) nor the semitransparent film (113), and is characterized in that the semitransparent film (113) has an antireflection function with respect to the photolithographic light.

摘要翻译： 本发明提供了一种用于减少光刻步骤的渐变光掩模及其制造工艺，其使用通常可获得的光掩模坯料防止遮光膜的反射率增长，使得在形成半透明膜期间容易对准，并且使得能够 半透明薄膜在遮光罩上具有良好的台阶覆盖率。 光掩模（100）包括在透明基板上包括具有期望图案的遮光膜（114）的遮光区域的混合物，其中形成图案的膜对光刻光基本上不透明;透射膜（113），透射膜 所述透光性的光刻光以及遮光膜（114）和半透明膜（113）依次层叠在透明基板（101）上; 半透明区域，其中仅有半透明膜（113）; 透光区域既不存在遮光膜（114）也不存在半透明膜（113），其特征在于，半透明膜（113）相对于光刻光具有防反射功能。

公开(公告)号：US06458496B2

公开(公告)日：2002-10-01

申请号：US09736805

申请日：2000-12-14

申请人： Toshiaki Motonaga ,  Toshifumi Yokoyama ,  Takafumi Okamura ,  Yoshinori Kinase ,  Hiroshi Mohri ,  Junji Fujikawa ,  Hiro-o Nakagawa ,  Shigeki Sumida ,  Satoshi Yusa ,  Masashi Ohtsuki

发明人： Toshiaki Motonaga ,  Toshifumi Yokoyama ,  Takafumi Okamura ,  Yoshinori Kinase ,  Hiroshi Mohri ,  Junji Fujikawa ,  Hiro-o Nakagawa ,  Shigeki Sumida ,  Satoshi Yusa ,  Masashi Ohtsuki

IPC分类号： G03S900

CPC分类号： G03F1/32 ,  B32B17/06

摘要： A blank for a halftone phase shift photomask in the present invention comprises a transparent substrate and a halftone phase shift film provided thereon, and said halftone phase shift film has a multilayer construction in which at least a first layer capable of being etched with a chlorinated gas and a second layer capable of being etched with a fluorinated gas are disposed in this order from the side near said transparent substrate. A film made of tantalum silicides is suitable to use as the second layer of the halftone phase shift film. When such a blank is first etched with a fluorinated gas and then etched with chlorinated gas, because an etching selective ratio to a transparent substrate made of synthetic quartz and the like can be taken sufficiently while maintaining the applicability to the exposure light with a short wavelength that is characteristic of silicide materials in addition to good chemical stability and good processing properties that are characteristic of tantalum materials, patterning in high precision will be made possible. As a result, it is possible to obtain an ideal halftone phase shift photomask excellent in stability after mask processing and in the applicability to the short wavelength.

摘要翻译： 本发明中的半色调相移光掩模的空白包括透明基板和设置在其上的半色调相移膜，所述半色调相移膜具有多层结构，其中至少可以用氯化气体蚀刻的第一层 并且能够用氟化气体蚀刻的第二层从靠近所述透明基板的一侧依次设置。 由硅化钽制成的薄膜适用于半色调相移薄膜的第二层。 当首先用氟化气体蚀刻这样的坯料，然后用氯化气体蚀刻时，由于可以充分利用由合成石英等制成的透明基板的蚀刻选择比，同时保持对短波长的曝光光的适用性 这是硅化物材料的特征，除了钽材料的特征的良好的化学稳定性和良好的加工性能之外，将能够高精度地进行图案化。 结果，可以获得在掩模处理之后和在短波长的适用性方面优异的理想半色调相移光掩模。

公开(公告)号：US06764792B1

公开(公告)日：2004-07-20

申请号：US09830598

申请日：2001-04-27

申请人： Junji Fujikawa ,  Yoshinori Kinase ,  Takafumi Okamura ,  Hiroshi Mohri ,  Toshifumi Yokoyama ,  Haruo Kokubo

发明人： Junji Fujikawa ,  Yoshinori Kinase ,  Takafumi Okamura ,  Hiroshi Mohri ,  Toshifumi Yokoyama ,  Haruo Kokubo

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/58

摘要： The invention relates to a halftone phase shift photomask which is controlled with precision in terms of its transmittance at a wavelength applied to inspection, and measuring equipment, so that its quality can easily be assured even when its phase difference at an exposure wavelength is controlled at 180° C. with precision and its transmittance is set at 1 to 20% as desired at that wavelength. The halftone phase shift photomask (107) comprises on a transparent substrate (101) and a halftone phase shift film containing at least tantalum, oxygen, carbon and nitrogen, and has a multilayer structure comprising at least two or more different layers (102) and (103).

摘要翻译： 本发明涉及一种半色调相移光掩模，其在对检查的波长的透射率和测量设备方面进行精确控制，使得即使将其在曝光波长处的相位差控制在 180℃，其透过率根据需要设定在1〜20％。 半色调相移光掩模（107）包括在透明基板（101）和至少含有钽，氧，碳和氮的半色调相移膜，并且具有包括至少两个或多个不同层（102）和 （103）。

公开(公告)号：US06740455B2

公开(公告)日：2004-05-25

申请号：US10023841

申请日：2001-12-21

申请人： Kenji Noguchi ,  Toshiaki Motonaga ,  Hiro-o Nakagawa ,  Yasutaka Morikawa ,  Toshifumi Yokoyama ,  Takashi Tominaga ,  Yoshinori Kinase ,  Junji Fujikawa ,  Yoichi Takahashi

发明人： Kenji Noguchi ,  Toshiaki Motonaga ,  Hiro-o Nakagawa ,  Yasutaka Morikawa ,  Toshifumi Yokoyama ,  Takashi Tominaga ,  Yoshinori Kinase ,  Junji Fujikawa ,  Yoichi Takahashi

IPC分类号： G03F900

CPC分类号： G03F1/50

摘要： A photomask is produced which enables the simplification of the steps of lithography. A photomask is provided with shielding patterns made of shielding metallic thin film on a transparent substrate, wherein the photomask further comprises translucent patterns mainly including tantalum of materials selected from tantalum silicide, tantalum oxide, tantalum nitride or mixture thereof.

摘要翻译： 制造了能够简化光刻步骤的光掩模。 光掩模设置有在透明基板上由屏蔽金属薄膜制成的屏蔽图案，其中光掩模还包括主要包括选自硅化钽，氧化钽，氮化钽或其混合物的材料的钽的半透明图案。

公开(公告)号：US5024505A

公开(公告)日：1991-06-18

申请号：US474952

申请日：1990-02-05

申请人： Junji Fujikawa ,  Fumiaki Tamura

发明人： Junji Fujikawa ,  Fumiaki Tamura

IPC分类号： G02B6/255 ,  G02B6/38

CPC分类号： G02B6/3801 ,  G02B6/3803

摘要： An array splice for ribbon-like multi-core optical fibers comprises capillary tubes of ultraviolet-transmitting glass each having an inner diameter slightly larger than the outer diameter of the clad of an optical fiber, each glass capillary tube including tapered portions on the opposite ends thereof for insertion of optical fiber bodies, and a groove formed in the middle upper surface region thereof for discharging bubbles and adhesive agent, and a base including recesses formed in the middle upper surface region thereof for receiving and supporting the lower portions of the tube walls of the glass capillary tubes, and a plurality of front-edged separators each disposed at the opposite ends of the associated receiving and supporting recess. The separators are disposed with approximately the same pitch as that for the capillary tubes. Defined between adjacent separators are optical fiber insertion paths having a width which increases with increasing distances from the opposite ends of each capillary tube.