公开(公告)号：US08048777B2

公开(公告)日：2011-11-01

申请号：US11902515

申请日：2007-09-21

申请人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

发明人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/00 ,  H01L21/44

CPC分类号： H01L21/67132 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/67092 ,  H01L21/707 ,  H01L27/1266

摘要： An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.

公开(公告)号：US20080113486A1

公开(公告)日：2008-05-15

申请号：US11902514

申请日：2007-09-21

申请人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

发明人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  B32B43/006 ,  G02F1/1303 ,  G02F1/13306 ,  G06K19/0772 ,  H01L21/67132 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/156 ,  H01L31/1892 ,  H01L31/206 ,  H01L33/005 ,  H01L51/003 ,  H01L51/0097 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68386 ,  H01L2221/68395 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/19041 ,  H01L2924/30105 ,  Y10T29/41

摘要： An object is to eliminate electric discharge due to static electricity generated by peeling when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element. A substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers. The film is bent along a curved surface of the pressurization roller on a side of the pressurization rollers, where the film is collected, and accordingly, peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid such as pure water is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.

摘要翻译： 目的在于，当从用于制造半导体元件的基板剥离包含半导体元件的元件形成层时，由于剥离产生的静电而消除放电。 形成元件形成层和剥离层的基板，并且使膜通过加压辊之间的间隙。 膜附着在加压辊之间的元件形成层。 该薄膜沿加压辊的弯曲表面在加压辊的一侧弯曲，其中薄膜被收集，因此在元件形成层和剥离层之间产生剥离，并且元件形成层转移到 电影。 液体如纯水通过喷嘴依次供给到通过剥离产生的元件形成层和剥离层之间的间隙，使得在元件形成层和剥离层的表面上产生的电荷被 液体。

公开(公告)号：US08043936B2

公开(公告)日：2011-10-25

申请号：US12232049

申请日：2008-09-10

申请人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

发明人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/322 ,  H01L21/20 ,  H01L21/36 ,  H01G9/20

CPC分类号： H01L21/67132 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/67092 ,  H01L21/707 ,  H01L27/1266

摘要： An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.

摘要翻译： 当从衬底剥离包括半导体元件的元件形成层时，目的是抑制由剥离产生的静电产生的放电。 在衬底上形成释放层和元件形成层。 可以将后面剥离的支撑基材固定在元件形成层的上表面。 元件形成层通过支撑基材转变，并且在元件形成层和剥离层之间的界面产生剥离。 在供给液体时进行剥离，使得通过剥离顺序出现的元素形成层和剥离层被诸如纯水的液体润湿。 在元件形成层和剥离层的表面上产生的电荷可以被液体扩散，并且可以消除通过剥离带电的放电。

公开(公告)号：US20080132033A1

公开(公告)日：2008-06-05

申请号：US11902515

申请日：2007-09-21

申请人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

发明人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

IPC分类号： H01L21/00

CPC分类号： H01L21/67132 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/67092 ,  H01L21/707 ,  H01L27/1266

摘要： An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.

摘要翻译： 当从衬底剥离包括半导体元件的元件形成层时，目的是抑制由剥离产生的静电产生的放电。 在衬底上形成释放层和元件形成层。 可以将后面剥离的支撑基材固定在元件形成层的上表面。 元件形成层通过支撑基材转变，并且在元件形成层和剥离层之间的界面产生剥离。 在供给液体时进行剥离，使得通过剥离顺序出现的元素形成层和剥离层被诸如纯水的液体润湿。 在元件形成层和剥离层的表面上产生的电荷可以被液体扩散，并且可以消除通过剥离带电的放电。

公开(公告)号：US09054141B2

公开(公告)日：2015-06-09

申请号：US13285278

申请日：2011-10-31

申请人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

发明人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

IPC分类号： H01L21/67

CPC分类号： H01L21/67132 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/67092 ,  H01L21/707 ,  H01L27/1266

摘要： An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.

公开(公告)号：US20090023251A1

公开(公告)日：2009-01-22

申请号：US12232037

申请日：2008-09-10

申请人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

发明人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

IPC分类号： H01L21/50

CPC分类号： H01L21/67132 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/67092 ,  H01L21/707 ,  H01L27/1266

摘要： An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.

摘要翻译： 当从衬底剥离包括半导体元件的元件形成层时，目的是抑制由剥离产生的静电产生的放电。 在衬底上形成释放层和元件形成层。 可以将后面剥离的支撑基材固定在元件形成层的上表面。 元件形成层通过支撑基材转变，并且在元件形成层和剥离层之间的界面产生剥离。 在供给液体时进行剥离，使得通过剥离顺序出现的元素形成层和剥离层被诸如纯水的液体润湿。 在元件形成层和剥离层的表面上产生的电荷可以被液体扩散，并且可以消除通过剥离带电的放电。

公开(公告)号：US08889438B2

公开(公告)日：2014-11-18

申请号：US13406603

申请日：2012-02-28

申请人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

发明人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

IPC分类号： H01L21/58 ,  B32B43/00 ,  H01L21/683 ,  H01L21/67 ,  H01L27/12

CPC分类号： H01L27/1266 ,  B32B43/006 ,  G02F1/1303 ,  G02F1/13306 ,  G06K19/0772 ,  H01L21/67132 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/156 ,  H01L31/1892 ,  H01L31/206 ,  H01L33/005 ,  H01L51/003 ,  H01L51/0097 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68386 ,  H01L2221/68395 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/19041 ,  H01L2924/30105 ,  Y10T29/41

摘要： To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.

摘要翻译： 为了在从用于制造半导体元件的基板剥离包含半导体元件的元件形成层而被除去形成有元件形成层和剥离层的基板和薄膜之间的间隙中时，为了消除放电， 加压辊。 该膜附着在加压辊之间的元件形成层上，加压辊的一侧的加压辊的弯曲表面沿加压辊的弯曲表面弯曲并收集。 在元件形成层和剥离层之间产生剥离，并且元件形成层被转印到膜上。 通过喷嘴将液体顺序地供给到通过剥离产生的元件形成层和剥离层之间的间隙，使得在元件形成层和剥离层的表面上产生的电荷被液体扩散。

公开(公告)号：US08048770B2

公开(公告)日：2011-11-01

申请号：US12232036

申请日：2008-09-10

申请人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

发明人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/322 ,  H01L21/20 ,  H01L21/36 ,  H01G9/20

CPC分类号： H01L21/67132 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/67092 ,  H01L21/707 ,  H01L27/1266

摘要： An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.

公开(公告)号：US20090017567A1

公开(公告)日：2009-01-15

申请号：US12232036

申请日：2008-09-10

申请人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

发明人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

IPC分类号： H01L21/50

CPC分类号： H01L21/67132 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/67092 ,  H01L21/707 ,  H01L27/1266

摘要： An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.

公开(公告)号：US08803298B2

公开(公告)日：2014-08-12

申请号：US13354635

申请日：2012-01-20

申请人： Yoshiaki Oikawa ,  Shingo Eguchi

发明人： Yoshiaki Oikawa ,  Shingo Eguchi

IPC分类号： H01L23/02

CPC分类号： H01L23/60 ,  H01L23/3107 ,  H01L23/66 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3025 ,  H01L2924/00

摘要： With the use of a conductive shield formed on the top or bottom side of a semiconductor integrated circuit, an electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge is prevented, and sufficient communication capability is obtained. With the use of a pair of insulators which sandwiches the semiconductor integrated circuit, a highly reliable semiconductor device that is reduced in thickness and size and has resistance to an external stress can be provided. A semiconductor device can be manufactured with high yield while defects of shapes and characteristics due to an external stress or electrostatic discharge are prevented in the manufacturing process.

摘要翻译： 通过使用形成在半导体集成电路的顶部或底部的导电屏蔽，防止由静电放电引起的半导体集成电路的静电击穿（电路的故障或半导体元件的损坏），并且充分的通信 获得能力。 通过使用夹持半导体集成电路的一对绝缘体，可以提供厚度和尺寸减小并且具有耐外部应力的高度可靠的半导体器件。 可以以高产率制造半导体器件，同时在制造过程中防止由外部应力或静电放电引起的形状和特性的缺陷。