Process of growing polycrystalline silicon-germanium alloy having large
silicon content
    11.
    发明授权
    Process of growing polycrystalline silicon-germanium alloy having large silicon content 失效
    生长具有大硅含量的多晶硅锗合金的工艺

    公开(公告)号:US5879970A

    公开(公告)日:1999-03-09

    申请号:US922577

    申请日:1997-09-03

    摘要: Polycrystalline silicon-germanium alloy is grown on a glass substrate through a chemical vapor deposition under the conditions where the substrate temperature ranges from 350 degrees to 450 degrees in centigrade, the ratio between gas flow rate of Si.sub.2 H.sub.6 and the gas flow rate of GeF.sub.4 ranges from 20:0.9 to 40:0.9 and the dilution gas is selected from the group consisting of helium, argon, nitrogen and hydrogen, and the composition ratio of silicon of the polycrystalline silicon-germanium is equal to or greater than 80 percent so that the carrier mobility is drastically improved.

    摘要翻译: 多晶硅锗合金通过化学气相沉积在基板温度为350摄氏度至450摄氏度的条件下在玻璃基板上生长,Si2H6的气体流量与GeF4的气体流量之比为 20:0.9〜40:0.9,稀释气体选自氦气,氩气,氮气和氢气,多晶硅 - 锗的硅的组成比等于或大于80%,使载体 流动性大大提高。

    LIQUID ORGANIC SEMICONDUCTOR MATERIAL
    12.
    发明申请
    LIQUID ORGANIC SEMICONDUCTOR MATERIAL 审中-公开
    液体有机半导体材料

    公开(公告)号:US20120175604A1

    公开(公告)日:2012-07-12

    申请号:US13496451

    申请日:2010-09-15

    IPC分类号: H01L51/30

    摘要: An organic material having at least one aromatic conjugated π-electron system is selected. The purity of the organic material is improved by purification, and a conduction mechanism of the organic material is confirmed by a time-of-flight method, whereby a liquid phase of the organic material is usable as an organic semiconductor. A method that enables the usage of a liquid phase of an organic material as an organic semiconductor is provided. The method involves confirming the electronic conduction of the organic material having at least one aromatic conjugated π-electron system by evaluation of a charge transport property using a time-of-flight method, and by evaluation of a dilution effect caused by addition of a diluent.

    摘要翻译: 选择具有至少一个芳族共轭&电子体系的有机材料。 通过纯化改善有机材料的纯度,通过飞行时间法确认有机材料的传导机理,由此有机材料的液相可用作有机半导体。 提供了能够使有机材料的液相作为有机半导体的方法。 该方法包括通过使用飞行时间方法评价电荷传输性质,以及通过评估通过添加一种电子传递性质而引起的稀释效应来确认具有至少一种芳香族共轭电子体系的有机材料的电子传导 冲淡。

    Organic semiconductor material and organic semiconductor element
    13.
    发明授权
    Organic semiconductor material and organic semiconductor element 失效
    有机半导体材料和有机半导体元件

    公开(公告)号:US07365359B2

    公开(公告)日:2008-04-29

    申请号:US10698002

    申请日:2003-10-30

    IPC分类号: H01L51/00

    摘要: An organic semiconductor material having high charge mobility characteristics and an organic semiconductor element is provided. The organic semiconductor material has rodlike low-molecular liquid crystallinity, including a skeleton structure comprising L 6 π electron aromatic rings, M 10 π electron aromatic rings, and N 14π electron aromatic rings, wherein L, M, and N are each an integer of 0 (zero) to 4 and L+M+N=1 to 4; and a terminal structure attached to both ends of the skeleton structure. The terminal structure can develop liquid crystallinity. The phase angle θ of impedance of the organic semiconductor material is −80°≦θ≦−90° as determined in the measurement of impedance in a frequency f range of 100 Hz≦f≦1 MHz in such a state that the organic semiconductor material in an isotropic phase state is held between a pair of opposed substrates with an interelectrode spacing of 9 μm.

    摘要翻译: 提供具有高电荷迁移率特性的有机半导体材料和有机半导体元件。 有机半导体材料具有棒状低分子液晶性,包括包括L 6π电子芳环,M 10π电子芳环和N 14pi电子芳环的骨架结构,其中L,M和N各自为 0(零)至4,L + M + N = 1至4; 以及附接到骨架结构的两端的端子结构。 端子结构可以形成液晶。 在100Hz <= f <= 1MHz的频率f范围内的阻抗测量中确定的有机半导体材料的阻抗的相位角θ为-80°θ= -90°, 各向同性相状态的有机半导体材料保持在一对相对基板之间,电极间隔为9μm。

    Organic semiconductor structure, process for producing the same, and organic semiconductor device
    14.
    发明申请
    Organic semiconductor structure, process for producing the same, and organic semiconductor device 失效
    有机半导体结构体及其制造方法以及有机半导体装置

    公开(公告)号:US20060166396A1

    公开(公告)日:2006-07-27

    申请号:US11390667

    申请日:2006-03-28

    IPC分类号: H01L21/00

    摘要: There are provided an organic semiconductor structure comprising an organic semiconductor layer, which is large in size and homogeneous and has high charge transfer characteristics, a process for producing the same, and an organic semiconductor device. The organic semiconductor structure has, in at least a part thereof, an organic semiconductor layer comprising an aligned liquid crystalline organic semiconductor material. The liquid crystalline organic semiconductor material comprises an organic compound having a core comprising L 6π electron rings, M 8π electron rings, N 10π electron rings, O 12π electron rings, P 14π electron rings, Q 16π electron rings, R 18π electron rings, S 20π electron rings, T 22π electron rings, U 24π electron rings, and V 26π electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+0+P+Q+R+S+T+U+V=1 to 6. The liquid crystalline organic semiconductor material exhibits at least one liquid crystal state at a temperature below the heat decomposition temperature thereof.

    摘要翻译: 提供了一种有机半导体结构,其包括尺寸大且均匀且具有高电荷转移特性的有机半导体层,其制造方法和有机半导体器件。 有机半导体结构在其至少一部分中具有包括取向的液晶有机半导体材料的有机半导体层。 液晶有机半导体材料包括具有芯的有机化合物,其包括L 6pi电子环,M 8pi电子环,N 10pi电子环,O 12pi电子环,P 14pi电子环,Q 16pi电子环,R 18pi电子环,S 20pi电子环,T 22pi电子环,U 24pi电子环和V 26pi电子环,其中L,M,N,O,P,Q,R,S,T,U和V各自为0的整数 零)至6和L + M + N + 0 + P + Q + R + S + T + U + V = 1至6.液晶有机半导体材料在低于热的温度下表现出至少一种液晶态 分解温度。