摘要:
Polycrystalline silicon-germanium alloy is grown on a glass substrate through a chemical vapor deposition under the conditions where the substrate temperature ranges from 350 degrees to 450 degrees in centigrade, the ratio between gas flow rate of Si.sub.2 H.sub.6 and the gas flow rate of GeF.sub.4 ranges from 20:0.9 to 40:0.9 and the dilution gas is selected from the group consisting of helium, argon, nitrogen and hydrogen, and the composition ratio of silicon of the polycrystalline silicon-germanium is equal to or greater than 80 percent so that the carrier mobility is drastically improved.
摘要:
An organic material having at least one aromatic conjugated π-electron system is selected. The purity of the organic material is improved by purification, and a conduction mechanism of the organic material is confirmed by a time-of-flight method, whereby a liquid phase of the organic material is usable as an organic semiconductor. A method that enables the usage of a liquid phase of an organic material as an organic semiconductor is provided. The method involves confirming the electronic conduction of the organic material having at least one aromatic conjugated π-electron system by evaluation of a charge transport property using a time-of-flight method, and by evaluation of a dilution effect caused by addition of a diluent.
摘要:
An organic semiconductor material having high charge mobility characteristics and an organic semiconductor element is provided. The organic semiconductor material has rodlike low-molecular liquid crystallinity, including a skeleton structure comprising L 6 π electron aromatic rings, M 10 π electron aromatic rings, and N 14π electron aromatic rings, wherein L, M, and N are each an integer of 0 (zero) to 4 and L+M+N=1 to 4; and a terminal structure attached to both ends of the skeleton structure. The terminal structure can develop liquid crystallinity. The phase angle θ of impedance of the organic semiconductor material is −80°≦θ≦−90° as determined in the measurement of impedance in a frequency f range of 100 Hz≦f≦1 MHz in such a state that the organic semiconductor material in an isotropic phase state is held between a pair of opposed substrates with an interelectrode spacing of 9 μm.
摘要翻译:提供具有高电荷迁移率特性的有机半导体材料和有机半导体元件。 有机半导体材料具有棒状低分子液晶性,包括包括L 6π电子芳环,M 10π电子芳环和N 14pi电子芳环的骨架结构,其中L,M和N各自为 0(零)至4,L + M + N = 1至4; 以及附接到骨架结构的两端的端子结构。 端子结构可以形成液晶。 在100Hz <= f <= 1MHz的频率f范围内的阻抗测量中确定的有机半导体材料的阻抗的相位角θ为-80°θ= -90°, 各向同性相状态的有机半导体材料保持在一对相对基板之间,电极间隔为9μm。
摘要:
There are provided an organic semiconductor structure comprising an organic semiconductor layer, which is large in size and homogeneous and has high charge transfer characteristics, a process for producing the same, and an organic semiconductor device. The organic semiconductor structure has, in at least a part thereof, an organic semiconductor layer comprising an aligned liquid crystalline organic semiconductor material. The liquid crystalline organic semiconductor material comprises an organic compound having a core comprising L 6π electron rings, M 8π electron rings, N 10π electron rings, O 12π electron rings, P 14π electron rings, Q 16π electron rings, R 18π electron rings, S 20π electron rings, T 22π electron rings, U 24π electron rings, and V 26π electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+0+P+Q+R+S+T+U+V=1 to 6. The liquid crystalline organic semiconductor material exhibits at least one liquid crystal state at a temperature below the heat decomposition temperature thereof.
摘要翻译:提供了一种有机半导体结构,其包括尺寸大且均匀且具有高电荷转移特性的有机半导体层,其制造方法和有机半导体器件。 有机半导体结构在其至少一部分中具有包括取向的液晶有机半导体材料的有机半导体层。 液晶有机半导体材料包括具有芯的有机化合物,其包括L 6pi电子环,M 8pi电子环,N 10pi电子环,O 12pi电子环,P 14pi电子环,Q 16pi电子环,R 18pi电子环,S 20pi电子环,T 22pi电子环,U 24pi电子环和V 26pi电子环,其中L,M,N,O,P,Q,R,S,T,U和V各自为0的整数 零)至6和L + M + N + 0 + P + Q + R + S + T + U + V = 1至6.液晶有机半导体材料在低于热的温度下表现出至少一种液晶态 分解温度。