公开(公告)号：US20150141552A1

公开(公告)日：2015-05-21

申请号：US14396246

申请日：2012-08-07

申请人： Tsutomu Takizawa ,  Hiroki Maeda

发明人： Tsutomu Takizawa ,  Hiroki Maeda

IPC分类号： B28B1/14 ,  C04B16/06 ,  B28B17/02 ,  C04B20/02 ,  C04B40/00 ,  C04B14/38 ,  C04B20/00

CPC分类号： B28B1/14 ,  B28B1/082 ,  B28B7/44 ,  B28B11/241 ,  B28B17/02 ,  B28B23/0006 ,  C04B14/38 ,  C04B14/386 ,  C04B16/06 ,  C04B20/0048 ,  C04B20/02 ,  C04B22/06 ,  C04B28/02 ,  C04B40/0089 ,  C04B40/0014 ,  C04B40/0028

摘要： A problem is to provide a production method by which a high-strength concrete formed body can be obtained. The problem can be solved by a method for producing a concrete formed body including a defoaming step [1] of holding a concrete composition having a water-cement ratio adjusted to from 14 to 20%, in a reduced pressure atmosphere to obtain a defoamed concrete; a defoaming step [2] of holding a carbon fiber immersed in a cement solution having a water-cement ratio adjusted to 14% or more, in a reduced pressure atmosphere to obtain a defoamed fiber; and a forming step of placing the defoamed concrete and the defoamed fiber within a shuttering, followed by curing to obtain a high-strength concrete formed body.

摘要翻译： 问题在于提供可以获得高强度混凝土成形体的制造方法。 该问题可以通过包含在减压气氛中将水灰比调整为14〜20％的混凝土组合物的消泡工序[1]制造的混凝土成形体来解决，得到消泡混凝土 ; 在减压气氛中将浸渍在水灰比为14％以上的水泥溶液中的碳纤维的消泡步骤[2]除去，得到消泡纤维; 以及将脱泡混凝土和消泡纤维放置在遮光板内的形成步骤，然后固化以获得高强度混凝土成形体。

公开(公告)号：US09018622B2

公开(公告)日：2015-04-28

申请号：US14110648

申请日：2012-04-11

申请人： Ken Tomino ,  Shin-ya Fujimoto ,  Hiroki Maeda

发明人： Ken Tomino ,  Shin-ya Fujimoto ,  Hiroki Maeda

IPC分类号： H01L51/05 ,  H01L51/00

CPC分类号： H01L51/0512 ,  H01L51/0012 ,  H01L51/0017 ,  H01L51/0026 ,  H01L51/0076 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

摘要： A method for manufacturing an organic semiconductor element, capable of obtaining an organic semiconductor element in which an organic semiconductor layer is easily patterned without being lowered in mobility, which includes: a source electrode and drain electrode formation step; an organic semiconductor layer formation step of forming an organic semiconductor layer having the liquid crystal organic semiconductor material on the alignment layer to cover the source electrode and the drain electrode; a dielectric layer formation step of forming a dielectric layer on the organic semiconductor layer to be positioned at least on a channel region between the source electrode and the drain electrode; and an annealing step of annealing the organic semiconductor layer, on which the dielectric layer is formed, at a liquid crystal phase temperature of the liquid crystal organic semiconductor material.

摘要翻译： 一种制造有机半导体元件的方法，其能够获得有机半导体元件，其中有机半导体层容易图案化而不降低迁移率，其包括：源电极和漏电极形成步骤; 有机半导体层形成步骤，在取向层上形成具有液晶有机半导体材料的有机半导体层，以覆盖源电极和漏电极; 电介质层形成工序，在所述有机半导体层上形成至少位于所述源电极和所述漏电极之间的沟道区域上的电介质层; 以及退火步骤，在液晶有机半导体材料的液晶相温度下退火形成介电层的有机半导体层。

公开(公告)号：US20140042421A1

公开(公告)日：2014-02-13

申请号：US14110648

申请日：2012-04-11

申请人： Ken Tomino ,  Shin-ya Fujimoto ,  Hiroki Maeda

发明人： Ken Tomino ,  Shin-ya Fujimoto ,  Hiroki Maeda

IPC分类号： H01L51/05

CPC分类号： H01L51/0512 ,  H01L51/0012 ,  H01L51/0017 ,  H01L51/0026 ,  H01L51/0076 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

摘要： A method for manufacturing an organic semiconductor element, capable of obtaining an organic semiconductor element in which an organic semiconductor layer is easily patterned without being lowered in mobility, which includes: a source electrode and drain electrode formation step; an organic semiconductor layer formation step of forming an organic semiconductor layer having the liquid crystal organic semiconductor material on the alignment layer to cover the source electrode and the drain electrode; a dielectric layer formation step of forming a dielectric layer on the organic semiconductor layer to be positioned at least on a channel region between the source electrode and the drain electrode; and an annealing step of annealing the organic semiconductor layer, on which the dielectric layer is formed, at a liquid crystal phase temperature of the liquid crystal organic semiconductor material.

摘要翻译： 一种制造有机半导体元件的方法，其能够获得有机半导体元件，其中有机半导体层容易图案化而不降低迁移率，其包括：源电极和漏电极形成步骤; 有机半导体层形成步骤，在取向层上形成具有液晶有机半导体材料的有机半导体层，以覆盖源电极和漏电极; 电介质层形成工序，在所述有机半导体层上形成至少位于所述源电极和所述漏电极之间的沟道区域上的电介质层; 以及退火步骤，在液晶有机半导体材料的液晶相温度下退火形成介电层的有机半导体层。

公开(公告)号：US20070128764A1

公开(公告)日：2007-06-07

申请号：US11445940

申请日：2006-06-02

申请人： Ken Tomino ,  Shigeru Sugawara ,  Hiroki Maeda ,  Masanao Matsuoka

发明人： Ken Tomino ,  Shigeru Sugawara ,  Hiroki Maeda ,  Masanao Matsuoka

IPC分类号： H01L29/08 ,  H01L51/40

CPC分类号： H01L51/0071 ,  C09K19/3491 ,  C09K19/3497 ,  H01L51/0076 ,  H01L51/0545 ,  H01L51/0558 ,  Y02E10/549

摘要： The present invention is directed to the provision of a novel liquid crystalline organic semiconductor material that is highly stable under an film forming environment and, at the same time, can easily form a film, for example, by coating. The liquid crystalline organic semiconductor material is represented by chemical formula 1 wherein R1 and R2 represent an identical alkyl group having 7 to 20 carbon atoms: There is also provided a liquid crystalline organic semiconductor material characterized by being represented by chemical formula 2 wherein R3 and R4 represent an identical alkyl group having 7 to 20 carbon atoms:

摘要翻译： 本发明涉及提供一种在成膜环境下高度稳定的新型液晶有机半导体材料，同时可以容易地通过涂布形成膜。 液晶有机半导体材料由化学式1表示，其中R 1和R 2表示相同的具有7至20个碳原子的烷基。还提供了以化学式2表示的液晶有机半导体材料，其中R3和R4 表示具有7至20个碳原子的相同的烷基：

公开(公告)号：US20060054884A1

公开(公告)日：2006-03-16

申请号：US11092341

申请日：2005-03-29

申请人： Hiroki Maeda ,  Ken Tomino ,  Shigeru Sugawara ,  Junichi Hanna

发明人： Hiroki Maeda ,  Ken Tomino ,  Shigeru Sugawara ,  Junichi Hanna

IPC分类号： H01L51/00

CPC分类号： H01L51/428 ,  H01L51/0039 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0062 ,  H01L51/0065 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0071 ,  H01L51/0076 ,  H01L51/0545 ,  Y02E10/549 ,  Y02P70/521 ,  Y10T428/10 ,  Y10T428/1005 ,  Y10T428/1036 ,  Y10T428/1055

摘要： The main object of the invention is to provide an organic semiconductor material whose material designing is easy, and is capable to secure satisfying purity, so that it can be easily used industrially. And further, also to provide an organic semiconductor structure and an organic semiconductor device using the organic semiconductor material. To achieve the object, the present invention provides an organic semiconductor material having a structural formula of the following chemical formula 1: -((A)-(B))n—  1 wherein A is a mesogen exhibiting liquid crystallinity; has a skeletal structure comprising a π-electron ring selected from a group consisting of L-unit of 6π-electron system ring, M-unit of 8π-electron system ring, N-unit of 10π-electron system ring, O-unit of 12π-electron system ring, P-unit of 14π-electron system ring, Q-unit of 16π-electron system ring, R-unit of 18π-electron system ring, S-unit of 20π-electron system ring, T-unit of 22π-electron system ring, U-unit of 24π-electron system ring and V-unit of 26π-electron system ring (whereupon L, M, N, O, P, Q, R, S, T, U and V each represent an integer of 0 to 12, and L+M+N+O+P+Q+R+S+T+U+V is 1 to 12); B has a chain structure with high flexibility; and n is about 3 to about 3000.

摘要翻译： 本发明的主要目的在于提供一种容易进行设计的有机半导体材料，能够确保纯度，从而能够容易地在工业上使用。 此外，还提供使用有机半导体材料的有机半导体结构和有机半导体器件。 为了实现该目的，本发明提供具有下列化学式的结构式的有机半导体材料

公开(公告)号：US20060054883A1

公开(公告)日：2006-03-16

申请号：US11092184

申请日：2005-03-29

申请人： Junichi Hanna ,  Hiroki Maeda ,  Akihiko Nakasa ,  Hidehiro Nakagawa

发明人： Junichi Hanna ,  Hiroki Maeda ,  Akihiko Nakasa ,  Hidehiro Nakagawa

IPC分类号： H01L29/08

CPC分类号： H01L51/0071 ,  H01L51/0052 ,  H01L51/0065 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0076 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/105

摘要： The present invention provides an organic semiconductor device comprising an organic semiconductor layer having good charge carrier transport property, wherein a carrier injection to the organic semiconductor layer is easy. The above problem is solved by an organic semiconductor device comprising a first electrode and a second electrode facing to each other, and an organic semiconductor layer provided in between the first electrode and the second electrode, wherein a charge carrier injection promoting layer is formed in between the organic semiconductor layer and at least one electrode of the first electrode and the second electrode.

摘要翻译： 本发明提供一种包含具有良好的载流子传输性的有机半导体层的有机半导体器件，其中对有机半导体层的载流子注入容易。 上述问题通过包括第一电极和彼此面对的第二电极的有机半导体器件和设置在第一电极和第二电极之间的有机半导体层来解决，其中在其间形成有载流子注入促进层 有机半导体层和第一电极和第二电极的至少一个电极。

公开(公告)号：US09156186B2

公开(公告)日：2015-10-13

申请号：US14396246

申请日：2012-08-07

申请人： Tsutomu Takizawa ,  Hiroki Maeda

发明人： Tsutomu Takizawa ,  Hiroki Maeda

IPC分类号： B28B1/14 ,  C04B22/06 ,  C04B28/02 ,  C04B14/38 ,  C04B16/06 ,  B28B7/44 ,  B28B1/08 ,  B28B11/24 ,  B28B23/00 ,  B28B17/02 ,  C04B20/00 ,  C04B20/02 ,  C04B40/00

CPC分类号： B28B1/14 ,  B28B1/082 ,  B28B7/44 ,  B28B11/241 ,  B28B17/02 ,  B28B23/0006 ,  C04B14/38 ,  C04B14/386 ,  C04B16/06 ,  C04B20/0048 ,  C04B20/02 ,  C04B22/06 ,  C04B28/02 ,  C04B40/0089 ,  C04B40/0014 ,  C04B40/0028

摘要： A problem is to provide a production method by which a high-strength concrete formed body can be obtained. The problem can be solved by a method for producing a concrete formed body including a defoaming step [1] of holding a concrete composition having a water-cement ratio adjusted to from 14 to 20%, in a reduced pressure atmosphere to obtain a defoamed concrete; a defoaming step [2] of holding a carbon fiber immersed in a cement solution having a water-cement ratio adjusted to 14% or more, in a reduced pressure atmosphere to obtain a defoamed fiber; and a forming step of placing the defoamed concrete and the defoamed fiber within a shuttering, followed by curing to obtain a high-strength concrete formed body.

摘要翻译： 问题在于提供可以获得高强度混凝土成形体的制造方法。 该问题可以通过一种制造混凝土成形体的方法来解决，该混凝土成形体包括在减压气氛中将水灰比调整为14〜20％的混凝土组合物的脱泡工序[1]，得到消泡混凝土 ; 在减压气氛中将浸渍在水灰比为14％以上的水泥溶液中的碳纤维的消泡步骤[2]除去，得到消泡纤维; 以及将脱泡混凝土和消泡纤维放置在遮光板内的形成步骤，然后固化以获得高强度混凝土成形体。

公开(公告)号：US08052828B2

公开(公告)日：2011-11-08

申请号：US11795213

申请日：2006-01-23

申请人： Toru Takahashi ,  Atsushi Yamanouchi ,  Naoya Katsumata ,  Hiroki Maeda

发明人： Toru Takahashi ,  Atsushi Yamanouchi ,  Naoya Katsumata ,  Hiroki Maeda

IPC分类号： B32B27/38 ,  B32B38/00

CPC分类号： G03F7/0382 ,  B32B27/38 ,  G03F7/0045 ,  G03F7/0385 ,  Y10T428/31511

摘要： A photosensitive laminate film for forming a top plate portion, which is suitably used for efficiently and inexpensively forming various precision fine spaces, particularly the precision fine spaces formed in an electronic part such as inkjet head, and a method of forming the precision fine space using the photosensitive laminate film are provided. As the photosensitive laminate film for forming the top plate portion of the precision fine space, which constitutes the top plate portion of the precision fine space by being placed on the precision minute concave portion so as to cover an upper opening followed by being cured, a laminate film providing at least the photosensitive composition layer and the transparent support film is used. The transparent support film supports the photosensitive composition layer as well as prevents the photosensitive composition layer from being deformed upon curing.

摘要翻译： 一种用于形成顶板部分的感光层压膜，其适合用于有效且廉价地形成各种精密细微空间，特别是形成在诸如喷墨头的电子部件中的精密细微空间，以及使用 提供感光层压膜。 作为用于形成精密微细空间的顶板部分的感光层压膜，其通过放置在精密微小凹部上而构成精密微细空间的顶板部分，以覆盖上部开口，随后固化， 使用至少提供感光性组合物层和透明支撑膜的层叠膜。 透明支撑膜支撑光敏组合物层，并且防止感光组合物层在固化时变形。

公开(公告)号：US20110053313A1

公开(公告)日：2011-03-03

申请号：US12863538

申请日：2009-01-21

申请人： Ken Tomino ,  Masanao Matsuoka ,  Tomomi Suzuki ,  Hiroki Maeda

发明人： Ken Tomino ,  Masanao Matsuoka ,  Tomomi Suzuki ,  Hiroki Maeda

IPC分类号： H01L51/10

CPC分类号： H01L51/0013 ,  H01L51/003 ,  H01L51/0076 ,  H01L51/0545 ,  H01L51/0558

摘要： The present invention provides a manufacturing method of an organic semiconductor device comprising a step of transferring an organic semiconductor layer to a gate insulation layer by a thermal transfer at a liquid crystal phase transition temperature of a liquid crystalline organic semiconductor material, and the step uses: an organic semiconductor layer-transferring substrate comprising a parting substrate having parting properties, and the organic semiconductor layer formed on the parting substrate and containing the liquid crystalline organic semiconductor material; and a substrate for forming an organic semiconductor device comprising a substrate, a gate electrode formed on the substrate, and the gate insulation layer formed to cover the gate electrode and having alignment properties which are capable of aligning the liquid crystalline organic semiconductor material on a surface of the gate insulation layer.

摘要翻译： 本发明提供了一种有机半导体器件的制造方法，其包括通过在液晶有机半导体材料的液晶相变温度下的热转印将有机半导体层转印到栅极绝缘层的步骤，并且该步骤用途： 包括具有分离性质的分离基板的有机半导体层转移基板和形成在分型基板上并含有液晶有机半导体材料的有机半导体层; 以及用于形成有机半导体器件的衬底，包括衬底，形成在衬底上的栅极电极和形成为覆盖栅电极并具有能够使液晶有机半导体材料在表面上对准的取向性能的栅极绝缘层 的栅极绝缘层。

公开(公告)号：US07638795B2

公开(公告)日：2009-12-29

申请号：US11390667

申请日：2006-03-28

申请人： Jun-ichi Hanna ,  Hiroki Maeda ,  Masanori Akada

发明人： Jun-ichi Hanna ,  Hiroki Maeda ,  Masanori Akada

IPC分类号： H01L35/24 ,  H01L51/40

CPC分类号： H01L51/0076 ,  H01L51/0012 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0058 ,  H01L51/0062 ,  H01L51/0064 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0069 ,  H01L51/0071 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/057 ,  Y02E10/549 ,  Y02P70/521

摘要： There are provided an organic semiconductor structure comprising an organic semiconductor layer, which is large in size and homogeneous and has high charge transfer characteristics, a process for producing the same, and an organic semiconductor device. The organic semiconductor structure has, in at least a part thereof, an organic semiconductor layer comprising an aligned liquid crystalline organic semiconductor material. The liquid crystalline organic semiconductor material comprises an organic compound having a core comprising L 6π electron rings, M 8π electron rings, N 10π electron rings, O 12π electron rings, P 14π electron rings, Q 16π electron rings, R 18π electron rings, S 20π electron rings, T 22π electron rings, U 24π electron rings, and V 26π electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6. The liquid crystalline organic semiconductor material exhibits at least one liquid crystal state at a temperature below the heat decomposition temperature thereof.

摘要翻译： 提供了一种有机半导体结构，其包括尺寸大且均匀且具有高电荷转移特性的有机半导体层，其制造方法和有机半导体器件。 有机半导体结构在其至少一部分中具有包括取向的液晶有机半导体材料的有机半导体层。 液晶有机半导体材料包括具有芯的有机化合物，其包括L 6pi电子环，M 8pi电子环，N 10pi电子环，O 12pi电子环，P 14pi电子环，Q 16pi电子环，R 18pi电子环，S 20pi电子环，T 22pi电子环，U 24pi电子环和V 26pi电子环，其中L，M，N，O，P，Q，R，S，T，U和V各自为0的整数 零）至6和L + M + N + O + P + Q + R + S + T + U + V = 1至6.液晶有机半导体材料在低于热的温度下显示至少一种液晶态 分解温度。