摘要:
An organic material having at least one aromatic conjugated π-electron system is selected. The purity of the organic material is improved by purification, and a conduction mechanism of the organic material is confirmed by a time-of-flight method, whereby a liquid phase of the organic material is usable as an organic semiconductor. A method that enables the usage of a liquid phase of an organic material as an organic semiconductor is provided. The method involves confirming the electronic conduction of the organic material having at least one aromatic conjugated π-electron system by evaluation of a charge transport property using a time-of-flight method, and by evaluation of a dilution effect caused by addition of a diluent.
摘要:
A liquid crystalline organic compound which gives a liquid crystal phase in a temperature range containing at least a room temperature and can exhibit a high charge mobility; an organic semiconductor structure and an organic semiconductor device each having the liquid crystalline organic compound are provided. The liquid crystalline organic compound contains any one of benzothiazole, benzoselenazole, benzoxazole and indene skeletons represented by the following chemical formula 1: wherein A is a nitrogen atom or a CH group, and B is a sulfur, selenium or oxygen atom is contained as Z1 in the following chemical formula 2: R1-Y1-Z1-Y2-R2 2 wherein, R1 and R2 are each independently a saturated or unsaturated hydrocarbon of a straight chain, a branched chain or a cyclic structure having 1 to 22 carbon atoms; R1 and R2 may be each independently bonded directly to Z1 without interposing Y1 or Y2 therebetween; and Y1 and Y2 are each independently selected from the group consisting of oxygen and selenium atoms and —CO—, —OCO—, —COO—, —N═CH—, —CONH—, —NH—, —NHCOO and —CH2 groups.
摘要:
The present invention provides a gas barrier film comprising a composite film provided with a gas barrier layer having a laminated structure including at least a metal oxide thin layer on a substrate film having a (1) 80 ppm/° C. or less coefficient of thermal expansion at 50° C. to 150° C. and/or a 10 ppm/% RH or less coefficient of humidity expansion at 25° C., and a (2) 150 C. ° or more glass transition temperature, and a display with a display element covered with the same.
摘要:
The main object of the present invention is to provide a gas barrier substrate having a high gas barrier property without a ruggedness, a pin hole or the like in the gas barrier layer. The present invention solves the problem by providing a gas barrier substrate having a base material, a planarization layer formed on the base material, and a gas barrier layer comprising a deposition film formed on the planarization layer.
摘要:
The main object of the present invention is to provide a gas barrier substrate having a high gas barrier property without a ruggedness, a pin hole or the like in the gas barrier layer. The present invention solves the problem by providing a gas barrier substrate having a base material, a planarization layer formed on the base material, and a gas barrier layer comprising a deposition film formed on the planarization layer.
摘要:
The main object of the present invention is to provide a gas barrier substrate having a high gas barrier property without a ruggedness, a pin hole or the like in the gas barrier layer. The present invention solves the problem by providing a gas barrier substrate having a base material, a planarization layer formed on the base material, and a gas barrier layer comprising a deposition film formed on the planarization layer.
摘要:
The main object of the present invention is to provide a gas barrier substrate having a high gas barrier property without a ruggedness, a pin hole or the like in the gas barrier layer. The present invention solves the problem by providing a gas barrier substrate having a base material, a planarization layer formed on the base material, and a gas barrier layer comprising a deposition film formed on the planarization layer.