公开(公告)号：US09742397B2

公开(公告)日：2017-08-22

申请号：US14955008

申请日：2015-11-30

Applicant: Silicon Laboratories Inc.

Inventor： Gang Yuan ,  Shouli Yan ,  Matthew Powell

IPC: H03F1/02 ,  H03K17/687 ,  H03F3/45

CPC classification number: H03K17/687 ,  H03F1/0205 ,  H03F3/45179 ,  H03F3/45278 ,  H03F3/45726 ,  H03F3/45892 ,  H03F2203/45038 ,  H03F2203/45212 ,  H03F2203/45696 ,  H03F2203/45726

Abstract: An apparatus includes a first field effect transistor (FET) that has a body and is coupled in a circuit. The apparatus also includes a second FET that has a body and is coupled in the circuit. The circuit has an offset because of a mismatch. The apparatus further includes an offset correction circuit coupled to the body of the first FET and to the body of the second FET. The offset correction circuit provides a first offset correction signal to the body of the first FET and provides a second offset correction signal to the body of the second FET.