公开(公告)号：US07977848B2

公开(公告)日：2011-07-12

申请号：US12711753

申请日：2010-02-24

申请人： Suguru Warashina ,  Takashi Matsuda ,  Shogo Inoue ,  Yoshio Satoh

发明人： Suguru Warashina ,  Takashi Matsuda ,  Shogo Inoue ,  Yoshio Satoh

IPC分类号： H01L41/08 ,  H01L23/00 ,  H03H9/25

CPC分类号： H03H9/02574 ,  H03H9/14541 ,  Y10T29/42

摘要： An acoustic wave device of the present application includes a piezoelectric substrate (14), interdigital transducer electrodes (13) formed on the piezoelectric substrate (14), and an SiO2 film (12) formed so as to cover the electrodes (13). The acoustic wave device also includes a displacement adjustment film (11) formed on the SiO2 film (12), and the displacement adjustment film (11) is formed from a substance whose acoustic velocity is slower than that of the substance forming the SiO2 film (12). According to this configuration, it is possible to suppress unnecessary waves as well as improve temperature characteristics. Also, by mounting such an acoustic wave device in a communication module or communication apparatus, it is possible to achieve an improvement in reliability.

摘要翻译： 本申请的声波元件包括形成在压电基板（14）上的压电基板（14），叉指式换能器电极（13）和形成为覆盖电极（13）的SiO 2膜（12）。 声波装置还包括形成在SiO 2膜（12）上的位移调节膜（11），位移调节膜（11）由声速慢于形成SiO 2膜的物质的物质形成（ 12）。 根据该结构，能够抑制不必要的波以及改善温度特性。 此外，通过将这种声波装置安装在通信模块或通信装置中，可以实现可靠性的提高。

公开(公告)号：US20100148890A1

公开(公告)日：2010-06-17

申请号：US12712144

申请日：2010-02-24

申请人： Kazunori Inoue ,  Takashi Matsuda ,  Michio Miura ,  Suguru Warashina

发明人： Kazunori Inoue ,  Takashi Matsuda ,  Michio Miura ,  Suguru Warashina

IPC分类号： H01P5/12 ,  H01P7/08 ,  H04R31/00

CPC分类号： H03H9/0222 ,  H03H9/02897 ,  H03H9/02929 ,  H03H9/02937 ,  H03H9/02984 ,  H03H9/02992 ,  Y10T29/49005

摘要： An acoustic wave element includes: resonators 2 each including an electrode to excite acoustic waves; a power supply wiring portion 3 that is disposed so as to connect the resonators 2 electrically; a piezoelectric substrate 4 on which the resonators 2 and the power supply wiring portion 3 are formed; a second medium 5 that is formed on the piezoelectric substrate 4 so as to cover the resonators 2; and a third medium 6 that is formed on the piezoelectric substrate 4 so as to cover at least the second medium 5 and the power supply wiring portion 3. A side surface 34 of the power supply wiring portion 3 that is in contact with a surface of the piezoelectric substrate 4 forms an obtuse first angle θ with respect to the surface 4a of the piezoelectric substrate 4.

摘要翻译： 声波元件包括：各自包括用于激发声波的电极的谐振器2; 设置为电连接谐振器2的电源配线部3; 形成有谐振器2和电源配线部3的压电基板4; 形成在压电基板4上以覆盖谐振器2的第二介质5; 以及形成在压电基板4上以至少覆盖第二介质5和电源配线部3的第三介质6.电源配线部3的与表面接触的侧面34 压电基板4形成钝角的第一角度＆amp; 相对于压电基板4的表面4a。

公开(公告)号：US20090267707A1

公开(公告)日：2009-10-29

申请号：US12408188

申请日：2009-03-20

申请人： Michio Miura ,  Suguru Warashina ,  Takashi Matsuda ,  Shogo Inoue ,  Kazunori Inoue ,  Satoru Matsuda

发明人： Michio Miura ,  Suguru Warashina ,  Takashi Matsuda ,  Shogo Inoue ,  Kazunori Inoue ,  Satoru Matsuda

IPC分类号： H01L41/047 ,  H03H9/64

CPC分类号： H03H9/1452 ,  H03H9/1457

摘要： An elastic wave device is described which includes a piezoelectric substrate, comb-shaped electrodes having teeth electrodes that are disposed so as to face each other on the piezoelectric substrate, a non-overlapping area in which the teeth electrodes of the comb-shaped electrodes do not overlap each other, and a overlapping area in which the teeth electrodes overlap each other and the velocity of sound is higher than that in the non-overlapping area.

摘要翻译： 描述了一种弹性波装置，其包括压电基片，具有在压电基片上彼此相对配置的齿电极的梳状电极，梳状电极的齿电极的非重叠区域 齿不重叠，齿电极重叠的重叠区域，声速比非重叠区域高。

公开(公告)号：US08258891B2

公开(公告)日：2012-09-04

申请号：US12608397

申请日：2009-10-29

申请人： Michio Miura ,  Suguru Warashina ,  Takashi Matsuda ,  Shogo Inoue ,  Kazunori Inoue ,  Satoru Matsuda

发明人： Michio Miura ,  Suguru Warashina ,  Takashi Matsuda ,  Shogo Inoue ,  Kazunori Inoue ,  Satoru Matsuda

IPC分类号： H03H9/25 ,  H03H9/15 ,  H03H9/70 ,  H03H9/72 ,  H03H3/02 ,  H03H3/08 ,  H03H3/04 ,  H03H3/10

CPC分类号： H03H3/10 ,  H03H9/0222 ,  H03H9/25 ,  Y10T29/42 ,  Y10T29/49005

摘要： An acoustic wave device includes a piezoelectric substrate, interdigital electrodes arranged on the piezoelectric substrate, a first dielectric element arranged between the interdigital electrodes, a second dielectric element that covers the interdigital electrodes and the first dielectric element, and an adjustment element that has been formed on the first dielectric element. The adjustment element has been formed from a material whose specific gravity is greater than that of the first dielectric element and that of the second dielectric element.

摘要翻译： 声波装置包括：压电基板，布置在压电基板上的叉指电极，布置在叉指电极之间的第一电介质元件，覆盖指状电极和第一电介质元件的第二电介质元件和已形成的调节元件 在第一电介质元件上。 调整元件由比重大于第一电介质元件和第二电介质元件的比重的材料形成。

公开(公告)号：US20090152982A1

公开(公告)日：2009-06-18

申请号：US12336139

申请日：2008-12-16

申请人： Michio MIURA ,  Suguru Warashina ,  Takashi Matsuda

发明人： Michio MIURA ,  Suguru Warashina ,  Takashi Matsuda

IPC分类号： H01L41/053

CPC分类号： H03H9/02559 ,  H03H9/02834

摘要： An elastic wave device including a piezoelectric substrate, comb-like electrodes formed on the piezoelectric substrate, and a dielectric layer formed on the piezoelectric substrate. The dielectric layer formed on the piezoelectric substrate covers the comb-like electrodes and the thickness of the dielectric layer formed on the piezoelectric substrate is larger than the sum of the thickness of the comb-like electrodes and the thickness of the dielectric layer formed on the comb-like electrodes.

摘要翻译： 一种弹性波装置，包括压电基片，形成在压电基片上的梳状电极和形成在压电基片上的电介质层。 形成在压电基板上的电介质层覆盖梳状电极，并且形成在压电基板上的电介质层的厚度大于梳状电极的厚度和形成在其上的电介质层的厚度之和 梳状电极。

公开(公告)号：US07188525B2

公开(公告)日：2007-03-13

申请号：US10126750

申请日：2002-04-22

申请人： Atsushi Machida ,  Suguru Warashina ,  Hiroshi Ishikawa ,  Tsutomu Miyashita ,  Yoshio Satoh

发明人： Atsushi Machida ,  Suguru Warashina ,  Hiroshi Ishikawa ,  Tsutomu Miyashita ,  Yoshio Satoh

IPC分类号： G01P9/04

CPC分类号： G01C19/5607

摘要： An angular velocity sensor is provided that includes a frame, an oscillator and torsion bars that connect the oscillator to the frame. The frame, the oscillator and the torsion bar are formed integral with each other by etching a material substrate in the thickness direction of the substrate. The oscillator, configured in the form of an H, includes a support, two first arms and two second arms. These arms extend from the support in an arm-extending direction perpendicular to the thickness direction of the substrate. The oscillator includes a mounting surface that is provided with a piezoelectric driver for generating in-plane oscillation of the oscillator, and with a piezoelectric detector for detecting out-of-plane oscillation of the oscillator.

摘要翻译： 提供了一种角速度传感器，其包括将振荡器连接到框架的框架，振荡器和扭杆。 通过在基板的厚度方向上蚀刻材料基板，将框架，振荡器和扭杆形成为一体。 以H形式构成的振荡器包括支撑件，两个第一臂和两个第二臂。 这些臂从支撑件沿与基板的厚度方向垂直的臂延伸方向延伸。 振荡器包括安装表面，该安装表面设置有用于产生振荡器的平面内振荡的压电驱动器，以及用于检测振荡器的平面外振荡的压电检测器。

公开(公告)号：US5801081A

公开(公告)日：1998-09-01

申请号：US864736

申请日：1997-05-28

申请人： Suguru Warashina ,  Osamu Tsuboi

发明人： Suguru Warashina ,  Osamu Tsuboi

IPC分类号： H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/76

CPC分类号： H01L21/84 ,  H01L27/1203 ,  H01L29/78609 ,  H01L29/78636 ,  H01L29/78654

摘要： The present invention relates to a method of manufacturing a semiconductor device for forming an insulated gate field effect transistor in a completely isolated SOI layer, and has for its object to prevent depletion or inversion surely by introducing impurities of sufficiently high concentration into an SOI layer adjacent to an isolating film filled up between element regions of the SOI layer and a backing insulating layer and to aim at flattening of the SOI substrate surface, and further, includes the steps of implanting impurity ions into a semiconductor layer from an oblique direction so as to reach the semiconductor layer under an oxidation-preventive mask using the oxidation-preventive mask as a mask for ion implantation, heating the semiconductor layer in an oxidizing atmosphere with the oxidation-preventive mask so as to form a local oxide film to isolate the semiconductor layer, and also forming a impurity region with impurities implanted into the semiconductor layer in a region adjacent to the local oxide film and to at least an insulating layer under the semiconductor layer.

摘要翻译： 本发明涉及一种在完全隔离的SOI层中制造用于形成绝缘栅场效应晶体管的半导体器件的方法，其目的是通过将相当高浓度的杂质引入邻近的SOI层来防止损耗或反转 涉及填充在SOI层的元件区域和背衬绝缘层之间的隔离膜，并且旨在使SOI衬底表面平坦化，并且还包括以下步骤：从倾斜方向将杂质离子注入到半导体层中，以便 使用防氧化掩模作为离子注入掩模在防氧化掩模下达到半导体层，用氧化防止掩膜在氧化气氛中加热半导体层，以形成局部氧化膜，以隔离半导体层 并且还在区域中形成具有注入到半导体层中的杂质的杂质区域 n，并且至少在半导体层下面的绝缘层。

公开(公告)号：US5698885A

公开(公告)日：1997-12-16

申请号：US796493

申请日：1997-02-05

申请人： Suguru Warashina ,  Osamu Tsuboi

发明人： Suguru Warashina ,  Osamu Tsuboi

IPC分类号： H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L21/84 ,  H01L27/1203 ,  H01L29/78609 ,  H01L29/78636 ,  H01L29/78654

摘要： The present invention relates to a method of manufacturing a semiconductor device for forming an insulated gate field effect transistor in a completely isolated SOI layer, and has for its object to prevent depletion or inversion surely by introducing impurities of sufficiently high concentration into an SOI layer adjacent to an isolating film filled up between element regions of the SOI layer and a backing insulating layer and to aim at flattening of the SOI substrate surface, and further, includes the steps of implanting impurity ions into a semiconductor layer from an oblique direction so as to reach the semiconductor layer under an oxidation-preventive mask using the oxidation-preventive mask as a mask for ion implantation, heating the semiconductor layer in an oxidizing atmosphere with the oxidation-preventive mask so as to form a local oxide film to isolate the semiconductor layer, and also forming a impurity region with impurities implanted into the semiconductor layer in a region adjacent to the local oxide film and to at least an insulating layer under the semiconductor layer.

摘要翻译： 本发明涉及一种在完全隔离的SOI层中制造用于形成绝缘栅场效应晶体管的半导体器件的方法，其目的是通过将相当高浓度的杂质引入邻近的SOI层来防止损耗或反转 涉及填充在SOI层的元件区域和背衬绝缘层之间的隔离膜，并且旨在使SOI衬底表面平坦化，并且还包括以下步骤：从倾斜方向将杂质离子注入到半导体层中，以便 使用防氧化掩模作为离子注入掩模在防氧化掩模下达到半导体层，用氧化防止掩膜在氧化气氛中加热半导体层，以形成局部氧化膜，以隔离半导体层 并且还在区域中形成具有注入到半导体层中的杂质的杂质区域 n，并且至少在半导体层下面的绝缘层。