公开(公告)号：US5801081A

公开(公告)日：1998-09-01

申请号：US864736

申请日：1997-05-28

申请人： Suguru Warashina ,  Osamu Tsuboi

发明人： Suguru Warashina ,  Osamu Tsuboi

IPC分类号： H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/76

CPC分类号： H01L21/84 ,  H01L27/1203 ,  H01L29/78609 ,  H01L29/78636 ,  H01L29/78654

摘要： The present invention relates to a method of manufacturing a semiconductor device for forming an insulated gate field effect transistor in a completely isolated SOI layer, and has for its object to prevent depletion or inversion surely by introducing impurities of sufficiently high concentration into an SOI layer adjacent to an isolating film filled up between element regions of the SOI layer and a backing insulating layer and to aim at flattening of the SOI substrate surface, and further, includes the steps of implanting impurity ions into a semiconductor layer from an oblique direction so as to reach the semiconductor layer under an oxidation-preventive mask using the oxidation-preventive mask as a mask for ion implantation, heating the semiconductor layer in an oxidizing atmosphere with the oxidation-preventive mask so as to form a local oxide film to isolate the semiconductor layer, and also forming a impurity region with impurities implanted into the semiconductor layer in a region adjacent to the local oxide film and to at least an insulating layer under the semiconductor layer.

摘要翻译： 本发明涉及一种在完全隔离的SOI层中制造用于形成绝缘栅场效应晶体管的半导体器件的方法，其目的是通过将相当高浓度的杂质引入邻近的SOI层来防止损耗或反转 涉及填充在SOI层的元件区域和背衬绝缘层之间的隔离膜，并且旨在使SOI衬底表面平坦化，并且还包括以下步骤：从倾斜方向将杂质离子注入到半导体层中，以便 使用防氧化掩模作为离子注入掩模在防氧化掩模下达到半导体层，用氧化防止掩膜在氧化气氛中加热半导体层，以形成局部氧化膜，以隔离半导体层 并且还在区域中形成具有注入到半导体层中的杂质的杂质区域 n，并且至少在半导体层下面的绝缘层。

公开(公告)号：US5698885A

公开(公告)日：1997-12-16

申请号：US796493

申请日：1997-02-05

申请人： Suguru Warashina ,  Osamu Tsuboi

发明人： Suguru Warashina ,  Osamu Tsuboi

IPC分类号： H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L21/84 ,  H01L27/1203 ,  H01L29/78609 ,  H01L29/78636 ,  H01L29/78654

摘要： The present invention relates to a method of manufacturing a semiconductor device for forming an insulated gate field effect transistor in a completely isolated SOI layer, and has for its object to prevent depletion or inversion surely by introducing impurities of sufficiently high concentration into an SOI layer adjacent to an isolating film filled up between element regions of the SOI layer and a backing insulating layer and to aim at flattening of the SOI substrate surface, and further, includes the steps of implanting impurity ions into a semiconductor layer from an oblique direction so as to reach the semiconductor layer under an oxidation-preventive mask using the oxidation-preventive mask as a mask for ion implantation, heating the semiconductor layer in an oxidizing atmosphere with the oxidation-preventive mask so as to form a local oxide film to isolate the semiconductor layer, and also forming a impurity region with impurities implanted into the semiconductor layer in a region adjacent to the local oxide film and to at least an insulating layer under the semiconductor layer.

摘要翻译： 本发明涉及一种在完全隔离的SOI层中制造用于形成绝缘栅场效应晶体管的半导体器件的方法，其目的是通过将相当高浓度的杂质引入邻近的SOI层来防止损耗或反转 涉及填充在SOI层的元件区域和背衬绝缘层之间的隔离膜，并且旨在使SOI衬底表面平坦化，并且还包括以下步骤：从倾斜方向将杂质离子注入到半导体层中，以便 使用防氧化掩模作为离子注入掩模在防氧化掩模下达到半导体层，用氧化防止掩膜在氧化气氛中加热半导体层，以形成局部氧化膜，以隔离半导体层 并且还在区域中形成具有注入到半导体层中的杂质的杂质区域 n，并且至少在半导体层下面的绝缘层。

公开(公告)号：US08222972B2

公开(公告)日：2012-07-17

申请号：US12712144

申请日：2010-02-24

申请人： Kazunori Inoue ,  Takashi Matsuda ,  Michio Miura ,  Suguru Warashina

发明人： Kazunori Inoue ,  Takashi Matsuda ,  Michio Miura ,  Suguru Warashina

IPC分类号： H03H9/46

CPC分类号： H03H9/0222 ,  H03H9/02897 ,  H03H9/02929 ,  H03H9/02937 ,  H03H9/02984 ,  H03H9/02992 ,  Y10T29/49005

摘要： An acoustic wave element includes: resonators 2 each including an electrode to excite acoustic waves; a power supply wiring portion 3 that is disposed so as to connect the resonators 2 electrically; a piezoelectric substrate 4 on which the resonators 2 and the power supply wiring portion 3 are formed; a second medium 5 that is formed on the piezoelectric substrate 4 so as to cover the resonators 2; and a third medium 6 that is formed on the piezoelectric substrate 4 so as to cover at least the second medium 5 and the power supply wiring portion 3. A side surface 34 of the power supply wiring portion 3 that is in contact with a surface of the piezoelectric substrate 4 forms an obtuse first angle θ with respect to the surface 4a of the piezoelectric substrate 4.

摘要翻译： 声波元件包括：各自包括用于激发声波的电极的谐振器2; 设置为电连接谐振器2的电源配线部3; 形成有谐振器2和电源配线部3的压电基板4; 形成在压电基板4上以覆盖谐振器2的第二介质5; 以及形成在压电基板4上以至少覆盖第二介质5和电源配线部3的第三介质6.电源配线部3的与表面接触的侧面34 压电基板4形成钝角的第一角度＆amp; 相对于压电基板4的表面4a。

公开(公告)号：US20100148626A1

公开(公告)日：2010-06-17

申请号：US12711753

申请日：2010-02-24

申请人： Suguru Warashina ,  Takashi Matsuda ,  Shogo Inoue ,  Yoshio Satoh

发明人： Suguru Warashina ,  Takashi Matsuda ,  Shogo Inoue ,  Yoshio Satoh

IPC分类号： H01L41/04 ,  H01L41/16 ,  H01L41/22

CPC分类号： H03H9/02574 ,  H03H9/14541 ,  Y10T29/42

摘要： An acoustic wave device of the present application includes a piezoelectric substrate (14), interdigital transducer electrodes (13) formed on the piezoelectric substrate (14), and an SiO2 film (12) formed so as to cover the electrodes (13). The acoustic wave device also includes a displacement adjustment film (11) formed on the SiO2 film (12), and the displacement adjustment film (11) is formed from a substance whose acoustic velocity is slower than that of the substance forming the SiO2 film (12). According to this configuration, it is possible to suppress unnecessary waves as well as improve temperature characteristics. Also, by mounting such an acoustic wave device in a communication module or communication apparatus, it is possible to achieve an improvement in reliability.

摘要翻译： 本申请的声波元件包括形成在压电基板（14）上的压电基板（14），叉指式换能器电极（13）和形成为覆盖电极（13）的SiO 2膜（12）。 声波装置还包括形成在SiO 2膜（12）上的位移调节膜（11），位移调节膜（11）由声速慢于形成SiO 2膜的物质的物质形成（ 12）。 根据该结构，能够抑制不必要的波以及改善温度特性。 此外，通过将这种声波装置安装在通信模块或通信装置中，可以实现可靠性的提高。

公开(公告)号：US07274129B2

公开(公告)日：2007-09-25

申请号：US10812362

申请日：2004-03-30

申请人： Masanori Ueda ,  Osamu Kawachi ,  Michio Miura ,  Suguru Warashina

发明人： Masanori Ueda ,  Osamu Kawachi ,  Michio Miura ,  Suguru Warashina

IPC分类号： H01L41/08

CPC分类号： H03H9/725 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01L2924/16195 ,  H03H3/10 ,  H03H9/0576 ,  H03H9/6483 ,  H03H9/72 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681

摘要： A surface acoustic wave device includes, a first substrate, a surface acoustic wave chip attached to the first substrate, and a second substrate that hermetically seals the surface acoustic wave chip. At least one of the first and second substrates includes. The first and second substrates have respective joining surfaces. An electric circuit is formed on a surface area of the first substrate other than the joining surfaces.

摘要翻译： 表面声波装置包括：第一基板，附着到第一基板的表面声波芯片和密封声表面波芯片的第二基板。 第一和第二基板中的至少一个包括。 第一和第二基板具有相应的接合表面。 在除了接合面之外的第一基板的表面区域上形成电路。

公开(公告)号：USRE45419E1

公开(公告)日：2015-03-17

申请号：US12276319

申请日：2008-11-22

申请人： Osamu Kawachi ,  Osamu Ikata ,  Masanori Ueda ,  Suguru Warashina

发明人： Osamu Kawachi ,  Osamu Ikata ,  Masanori Ueda ,  Suguru Warashina

IPC分类号： H03H9/72 ,  H03H9/64 ,  H03H3/08 ,  H03H9/54

CPC分类号： H03H9/1092 ,  H01L2224/48091 ,  H01L2224/48227 ,  H03H9/0547 ,  H03H9/0585 ,  H03H9/059 ,  Y10T29/42 ,  H01L2924/00014

摘要： A surface acoustic wave device includes a piezoelectric substrate having a first surface on which comb-like electrodes, first pads connected thereto, and a first film are provided. The first film is located so as to surround the comb-like electrodes. A base substrate has a second surface on which second pads joined to the first pads and a second film joined to the first film are provided. The first and second films joined by a surface activation process define a cavity in which the comb-like electrodes and the first and second pads are hermetically sealed.

摘要翻译： 声表面波装置包括具有第一表面的压电基片，其上设有梳状电极，与其连接的第一焊盘和第一膜。 第一膜定位成围绕梳状电极。 基底基板具有第二表面，第二焊盘在其上连接到第一焊盘，并且提供连接到第一膜的第二膜。 通过表面激活工艺连接的第一和第二膜限定了其中梳状电极和第一和第二焊盘被气密地密封的空腔。

公开(公告)号：US20100219906A1

公开(公告)日：2010-09-02

申请号：US12608397

申请日：2009-10-29

申请人： Michio MIURA ,  Suguru Warashina ,  Takashi Matsuda ,  Shogo Inoue ,  Kazunori Inoue ,  Satoru Matsuda

发明人： Michio MIURA ,  Suguru Warashina ,  Takashi Matsuda ,  Shogo Inoue ,  Kazunori Inoue ,  Satoru Matsuda

IPC分类号： H03H9/72 ,  H01L41/22

CPC分类号： H03H3/10 ,  H03H9/0222 ,  H03H9/25 ,  Y10T29/42 ,  Y10T29/49005

摘要： An acoustic wave device includes a piezoelectric substrate, interdigital electrodes arranged on the piezoelectric substrate, a first dielectric element arranged between the interdigital electrodes, a second dielectric element that covers the interdigital electrodes and the first dielectric element, and an adjustment element that has been formed on the first dielectric element. The adjustment element has been formed from a material whose specific gravity is greater than that of the first dielectric element and that of the second dielectric element.

摘要翻译： 声波装置包括：压电基板，布置在压电基板上的叉指电极，布置在叉指电极之间的第一电介质元件，覆盖指状电极和第一电介质元件的第二电介质元件和已形成的调节元件 在第一电介质元件上。 调整元件由比重大于第一电介质元件和第二电介质元件的比重的材料形成。

公开(公告)号：US07291904B2

公开(公告)日：2007-11-06

申请号：US11115253

申请日：2005-04-27

申请人： Takashi Matsuda ,  Suguru Warashina ,  Masanori Ueda ,  Osamu Kawachi ,  Yasufumi Kaneda

发明人： Takashi Matsuda ,  Suguru Warashina ,  Masanori Ueda ,  Osamu Kawachi ,  Yasufumi Kaneda

IPC分类号： H01L23/02 ,  H01L23/06 ,  H01L23/48 ,  H01L23/52 ,  H03H9/10

CPC分类号： H03H9/1071 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/15174 ,  H01L2924/15184 ,  H03H9/0071 ,  H03H9/059 ,  H03H9/1078 ,  H01L2224/05599

摘要： A package substrate includes signal pads provided on a main surface of the package substrate, footpads provided on a backside of the package substrate, and a sealing electrode provided on the main surface to surround the signal pads, the signal pads being electrically coupled to the footpads, the sealing electrode being insulated from the footpads.

摘要翻译： 封装衬底包括设置在封装衬底的主表面上的信号焊盘，设置在封装衬底的背面上的脚垫和设置在主表面上以围绕信号焊盘的密封电极，信号焊盘电耦合到脚垫 密封电极与脚垫绝缘。

公开(公告)号：US08085116B2

公开(公告)日：2011-12-27

申请号：US12408188

申请日：2009-03-20

申请人： Michio Miura ,  Suguru Warashina ,  Takashi Matsuda ,  Shogo Inoue ,  Kazunori Inoue ,  Satoru Matsuda

发明人： Michio Miura ,  Suguru Warashina ,  Takashi Matsuda ,  Shogo Inoue ,  Kazunori Inoue ,  Satoru Matsuda

IPC分类号： H03H9/54 ,  H03H9/145 ,  H03H9/25

CPC分类号： H03H9/1452 ,  H03H9/1457

摘要： An elastic wave device is described which includes a piezoelectric substrate, comb-shaped electrodes having teeth electrodes that are disposed so as to face each other on the piezoelectric substrate, a non-overlapping area in which the teeth electrodes of the comb-shaped electrodes do not overlap each other, and a overlapping area in which the teeth electrodes overlap each other and the velocity of sound is higher than that in the non-overlapping area.

摘要翻译： 描述了一种弹性波装置，其包括压电基片，具有在压电基片上彼此相对配置的齿电极的梳状电极，梳状电极的齿电极的非重叠区域 齿不重叠，齿电极重叠的重叠区域，声速比非重叠区域高。

公开(公告)号：US07977848B2

公开(公告)日：2011-07-12

申请号：US12711753

申请日：2010-02-24

申请人： Suguru Warashina ,  Takashi Matsuda ,  Shogo Inoue ,  Yoshio Satoh

发明人： Suguru Warashina ,  Takashi Matsuda ,  Shogo Inoue ,  Yoshio Satoh

IPC分类号： H01L41/08 ,  H01L23/00 ,  H03H9/25

CPC分类号： H03H9/02574 ,  H03H9/14541 ,  Y10T29/42

摘要： An acoustic wave device of the present application includes a piezoelectric substrate (14), interdigital transducer electrodes (13) formed on the piezoelectric substrate (14), and an SiO2 film (12) formed so as to cover the electrodes (13). The acoustic wave device also includes a displacement adjustment film (11) formed on the SiO2 film (12), and the displacement adjustment film (11) is formed from a substance whose acoustic velocity is slower than that of the substance forming the SiO2 film (12). According to this configuration, it is possible to suppress unnecessary waves as well as improve temperature characteristics. Also, by mounting such an acoustic wave device in a communication module or communication apparatus, it is possible to achieve an improvement in reliability.

摘要翻译： 本申请的声波元件包括形成在压电基板（14）上的压电基板（14），叉指式换能器电极（13）和形成为覆盖电极（13）的SiO 2膜（12）。 声波装置还包括形成在SiO 2膜（12）上的位移调节膜（11），位移调节膜（11）由声速慢于形成SiO 2膜的物质的物质形成（ 12）。 根据该结构，能够抑制不必要的波以及改善温度特性。 此外，通过将这种声波装置安装在通信模块或通信装置中，可以实现可靠性的提高。