公开(公告)号：US20220271176A1

公开(公告)日：2022-08-25

申请号：US17740273

申请日：2022-05-09

申请人： SunPower Corporation

发明人： Pei Hsuan Lu ,  Benjamin I. Hsia ,  David Aaron R. Barkhouse ,  Lee Gorny

IPC分类号： H01L31/02 ,  H01L31/18 ,  H01L31/0368

摘要： Local metallization of semiconductor substrates using a laser beam, and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a solar cell includes a substrate and a plurality of semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality of semiconductor regions. Each conductive contact structure includes a locally deposited metal portion disposed in contact with a corresponding a semiconductor region.

公开(公告)号：US11362234B2

公开(公告)日：2022-06-14

申请号：US16377102

申请日：2019-04-05

申请人： SunPower Corporation

发明人： Pei Hsuan Lu ,  Benjamin I. Hsia ,  Taeseok Kim

IPC分类号： H01L31/18 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0216 ,  B23K26/382

摘要： Local patterning and metallization of semiconductor structures using a laser beam, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a method of fabricating a solar cell includes providing a substrate having an intervening layer thereon. The method also includes locating a metal foil over the intervening layer. The method also includes exposing the metal foil to a laser beam, wherein exposing the metal foil to the laser beam forms openings in the intervening layer and forms a plurality of conductive contact structures electrically connected to portions of the substrate exposed by the openings.

公开(公告)号：US11362220B2

公开(公告)日：2022-06-14

申请号：US16376802

申请日：2019-04-05

申请人： SunPower Corporation

发明人： Pei Hsuan Lu ,  Benjamin I. Hsia ,  David Aaron R. Barkhouse ,  Lee Gorny

IPC分类号： H01L31/02 ,  H01L31/18 ,  H01L31/0368

摘要： Local metallization of semiconductor substrates using a laser beam, and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a solar cell includes a substrate and a plurality of semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality of semiconductor regions. Each conductive contact structure includes a locally deposited metal portion disposed in contact with a corresponding a semiconductor region.

公开(公告)号：US20220158001A1

公开(公告)日：2022-05-19

申请号：US17589581

申请日：2022-01-31

申请人： SunPower Corporation

发明人： Pei Hsuan Lu ,  Benjamin I. Hsia ,  David Aaron Randolph Barkhouse ,  Lewis C. Abra ,  George G. Correos ,  Boris Bastien

IPC分类号： H01L31/02 ,  H01L31/18

摘要： A method for fabricating a solar cell and the and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. The method can include: providing a solar cell having metal foil having first regions that are electrically connected to semiconductor regions on a substrate at a plurality of conductive contact structures, and second regions; locating a carrier sheet over the second regions; bonding the carrier sheet to the second regions; and removing the carrier sheet from the substrate to selectively remove the second regions of the metal foil.

公开(公告)号：US20190312156A1

公开(公告)日：2019-10-10

申请号：US16376802

申请日：2019-04-05

申请人： SunPower Corporation

发明人： Pei Hsuan Lu ,  Benjamin I. Hsia ,  David Aaron R. Barkhouse ,  Lee Gorny

IPC分类号： H01L31/02 ,  H01L31/0368 ,  H01L31/18

摘要： Local metallization of semiconductor substrates using a laser beam, and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a solar cell includes a substrate and a plurality of semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality of semiconductor regions. Each conductive contact structure includes a locally deposited metal portion disposed in contact with a corresponding a semiconductor region.

公开(公告)号：US20190308270A1

公开(公告)日：2019-10-10

申请号：US16377077

申请日：2019-04-05

申请人： SunPower Corporation

发明人： Pei Hsuan Lu ,  Benjamin I. Hsia ,  George G. Correos

IPC分类号： B23K26/22 ,  H01L31/18 ,  B23K26/00 ,  B23K26/02 ,  B23K26/08 ,  B23K26/10 ,  B23K26/06 ,  B23K26/16

摘要： A system for fabricating solar cells. The system including one or more of: a laser assisted metallization patterning unit adapted to expose a metal foil located over a substrate to a laser beam to form a conductive contact structure comprising a locally deposited metal on the substrate; a debris removal unit adapted to remove debris from a top surface of a metal foil that is attached to a top surface of a substrate; a carrier attachment unit adapted to attach a carrier to one the top surface of the metal foil; and a metal removal unit adapted to remove the carrier and at least a portion of the metal foil.