公开(公告)号：US20130000822A1

公开(公告)日：2013-01-03

申请号：US13405475

申请日：2012-02-27

Applicant: Myung-Gon KIM ,  Jong-In RYU ,  Jin-Wook LEE

Inventor： Myung-Gon KIM ,  Jong-In RYU ,  Jin-Wook LEE

IPC: B32B17/10 ,  B29C45/14

CPC classification number: B32B17/10816 ,  B32B37/10 ,  B32B2037/1253 ,  B32B2307/412 ,  B32B2457/00 ,  B32B2457/208 ,  H04B1/3888

Abstract: A method for fabricating a window member for a display device of a portable terminal includes: fabricating a high-hardness sheet to be attached to a surface of the window member (‘sheet fabrication step’), fabricating a body of the window member with a high-polymer synthetic resin (‘body fabrication step’), and attaching the high-hardness sheet to an outer surface of the body (‘attaching step’), in which the outer surface of the body is formed to have a curved surface in the body fabrication step.

Abstract translation: 一种用于制造便携式终端的显示装置的窗构件的方法包括：制造要附接到窗构件的表面的高硬度片（片制造步骤），用高硬度片制造窗构件的主体， 聚合物合成树脂（主体制造步骤），并且将高硬度片材附着到主体的外表面（安装步骤）中，其中主体的外表面在主体制造步骤中形成为具有弯曲表面。

公开(公告)号：US20110126906A1

公开(公告)日：2011-06-02

申请号：US12819307

申请日：2010-06-21

Applicant: Hwa-Young KO ,  Jin-Wook LEE ,  Doo-Youl LEE

Inventor： Hwa-Young KO ,  Jin-Wook LEE ,  Doo-Youl LEE

IPC: H01L31/00 ,  H01L31/18

CPC classification number: H01L31/035281 ,  H01L31/0682 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell includes a semiconductor substrate, an n+ region and a p+ region disposed on the semiconductor substrate, a first electrode electrically connected to the n+ region, and a second electrode electrically connected to the p+ region. A trench formed in the semiconductor substrate separates the n+ region from the p+ region.

Abstract translation: 太阳能电池包括半导体衬底，设置在半导体衬底上的n +区和p +区，电连接到n +区的第一电极和与p +区电连接的第二电极。 形成在半导体衬底中的沟槽将n +区与p +区分离。

公开(公告)号：US20100067303A1

公开(公告)日：2010-03-18

申请号：US12620758

申请日：2009-11-18

Applicant: Min-Gun PARK ,  Jin-Wook LEE ,  Sang-Won HWANG

Inventor： Min-Gun PARK ,  Jin-Wook LEE ,  Sang-Won HWANG

IPC: G11C16/04 ,  G11C8/00

CPC classification number: G11C16/3404

Abstract: A flash memory device comprising a high voltage generator circuit that is adapted to supply a program voltage having a target voltage to a selected word line is provided. The flash memory device is adapted to terminate the program interval in accordance with when the program voltage has been restored to the target voltage after dropping below the target voltage. A method for operating the flash memory device is also provided.

Abstract translation: 提供了一种闪存器件，其包括适于将具有目标电压的编程电压提供给所选字线的高压发生器电路。 闪存器件适于根据在降低到目标电压之后的程序电压恢复到目标电压时终止编程间隔。 还提供了一种用于操作闪速存储器件的方法。