公开(公告)号：US20240268237A1

公开(公告)日：2024-08-08

申请号：US18294338

申请日：2021-08-03

Applicant: TDK CORPORATION

Inventor： Minoru OTA ,  Tatsuo SHIBATA

IPC: H10N50/10 ,  H10B61/00

CPC classification number: H10N50/10 ,  H10B61/00

Abstract: A magnetic domain wall motion element includes a magnetic domain wall motion layer in which a magnetic domain wall is formed, a ferromagnetic layer, and a nonmagnetic layer interposed between the magnetic domain wall motion layer and the ferromagnetic layer, wherein at least a portion of a first surface of the magnetic domain wall motion layer on a side closer to the ferromagnetic layer, at a position overlapping with the ferromagnetic layer in a plan view in a laminating direction, is curved.

公开(公告)号：US20140293474A1

公开(公告)日：2014-10-02

申请号：US13853869

申请日：2013-03-29

Applicant: TDK CORPORATION

Inventor： Takekazu YAMANE ,  Takahiko MACHITA ,  Naomichi DEGAWA ,  Minoru OTA ,  Kenta HAMAMOTO

IPC: G11B5/39 ,  H01L43/08

CPC classification number: G11B5/3932 ,  G01R33/0076 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3912

Abstract: An MR element includes an MR part and upper and lower shield layers in a CPP structure. The MR element has side shield layers so as to interpose the MR part between the side shield layers in a track width direction. The MR part comprises a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer between the ferromagnetic layers. Each of the upper and lower shield layers has an inclined magnetization structure such that its magnetization is inclined relative to the track width direction. The side shield layers are magnetically coupled with the upper shield layer, respectively. The second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via an exchange-coupling functional gap layer. The side shield layer applies a bias magnetic field to the first ferromagnetic layer; and magnetizations of the first and second ferromagnetic layers are substantially orthogonal.

Abstract translation: MR元件包括CP部分和CPP结构中的上下屏蔽层。 MR元件具有侧屏蔽层，以便在侧屏蔽层之间沿轨道宽度方向插入MR部分。 MR部分包括非磁性中间层和第一和第二铁磁层，以将非磁性中间层介于铁磁层之间。 上下屏蔽层中的每一个具有倾斜的磁化结构，使得其磁化相对于磁道宽度方向倾斜。 侧屏蔽层分别与上屏蔽层磁耦合。 第二铁磁层经由交换耦合功能间隙层与下屏蔽层间接地磁耦合。 侧屏蔽层向第一铁磁层施加偏置磁场; 并且第一和第二铁磁层的磁化基本上是正交的。

公开(公告)号：US20140268405A1

公开(公告)日：2014-09-18

申请号：US13842948

申请日：2013-03-15

Applicant: TDK Corporation

Inventor： Takahiko MACHITA ,  Naomichi DEGAWA ,  Takekazu YAMANE ,  Takumi YANAGISAWA ,  Satoshi MIURA ,  Kenta HAMAMOTO ,  Minoru OTA ,  Kenzo MAKINO ,  Shohei KAWASAKI

IPC: G11B5/39

CPC classification number: G11B5/3912 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/398 ,  H01L43/08

Abstract: A magnetoresistive effect element that prevents a recording medium from deteriorating by effectively inhibiting erroneous writing to a medium or the like includes a magnetoresistive effect part, and an upper shield layer and a lower shield layer that are laminated and formed in a manner sandwiching the magnetoresistive effect part from above and below, and is in a current perpendicular to plane (CPP) structure in which a sense current is applied in a lamination direction. The magnetoresistive effect part includes a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer that sandwich the nonmagnetic intermediate layer from above and below, the upper shield layer and the lower shield layer have inclined magnetization structures in which magnetizations of them are respectively inclined with respect to a track width direction, the magnetizations of the upper shield layer and the lower shield layer are mutually substantially orthogonal, the first ferromagnetic layer is indirectly magnetically coupled with the upper shield layer via a first exchange coupling function gap layer that is positioned between the first ferromagnetic layer and the upper shield layer, and the second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via a second exchange coupling function gap layer that is positioned between the second ferromagnetic layer and the lower shield layer.

Abstract translation: 通过有效地抑制对介质等的错误写入来防止记录介质劣化的磁阻效应元件包括以夹着磁阻效应的方式层叠形成的磁阻效应部分，上屏蔽层和下屏蔽层 部分来自上方和下方，并且处于与层叠方向施加感测电流的垂直于平面（CPP）结构的电流。 磁阻效应部分包括非磁性中间层，并且从上下屏蔽层和下屏蔽层上下夹着非磁性中间层的第一铁磁层和第二铁磁层具有倾斜的磁化结构，其中它们的磁化为 分别相对于轨道宽度方向倾斜，上屏蔽层和下屏蔽层的磁化相互大致正交，第一铁磁层经由第一交换耦合功能间隙层与上屏蔽层间接地磁耦合， 位于所述第一铁磁层和所述上屏蔽层之间，并且所述第二铁磁层经由位于所述第二铁磁层和所述下屏蔽层之间的第二交换耦合功能间隙层与所述下屏蔽层间接地磁耦合。