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1.发明申请CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC DISK DEVICE USING SIDE SHIELD LAYERS 有权CPP型磁阻效应元件和使用侧面屏蔽层的磁性磁体器件公开(公告)号：US20140293474A1
公开(公告)日：2014-10-02
申请号：US13853869
申请日：2013-03-29
申请人： TDK CORPORATION
CPC分类号： G11B5/3932 , G01R33/0076 , G01R33/093 , G01R33/098 , G11B5/3912
摘要： An MR element includes an MR part and upper and lower shield layers in a CPP structure. The MR element has side shield layers so as to interpose the MR part between the side shield layers in a track width direction. The MR part comprises a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer between the ferromagnetic layers. Each of the upper and lower shield layers has an inclined magnetization structure such that its magnetization is inclined relative to the track width direction. The side shield layers are magnetically coupled with the upper shield layer, respectively. The second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via an exchange-coupling functional gap layer. The side shield layer applies a bias magnetic field to the first ferromagnetic layer; and magnetizations of the first and second ferromagnetic layers are substantially orthogonal.
摘要翻译： MR元件包括CP部分和CPP结构中的上下屏蔽层。 MR元件具有侧屏蔽层，以便在侧屏蔽层之间沿轨道宽度方向插入MR部分。 MR部分包括非磁性中间层和第一和第二铁磁层，以将非磁性中间层介于铁磁层之间。 上下屏蔽层中的每一个具有倾斜的磁化结构，使得其磁化相对于磁道宽度方向倾斜。 侧屏蔽层分别与上屏蔽层磁耦合。 第二铁磁层经由交换耦合功能间隙层与下屏蔽层间接地磁耦合。 侧屏蔽层向第一铁磁层施加偏置磁场; 并且第一和第二铁磁层的磁化基本上是正交的。
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公开(公告)号：US20140268405A1
公开(公告)日：2014-09-18
申请号：US13842948
申请日：2013-03-15
申请人： TDK Corporation
发明人： Takahiko MACHITA , Naomichi DEGAWA , Takekazu YAMANE , Takumi YANAGISAWA , Satoshi MIURA , Kenta HAMAMOTO , Minoru OTA , Kenzo MAKINO , Shohei KAWASAKI
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3932 , G11B5/398 , H01L43/08
摘要： A magnetoresistive effect element that prevents a recording medium from deteriorating by effectively inhibiting erroneous writing to a medium or the like includes a magnetoresistive effect part, and an upper shield layer and a lower shield layer that are laminated and formed in a manner sandwiching the magnetoresistive effect part from above and below, and is in a current perpendicular to plane (CPP) structure in which a sense current is applied in a lamination direction. The magnetoresistive effect part includes a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer that sandwich the nonmagnetic intermediate layer from above and below, the upper shield layer and the lower shield layer have inclined magnetization structures in which magnetizations of them are respectively inclined with respect to a track width direction, the magnetizations of the upper shield layer and the lower shield layer are mutually substantially orthogonal, the first ferromagnetic layer is indirectly magnetically coupled with the upper shield layer via a first exchange coupling function gap layer that is positioned between the first ferromagnetic layer and the upper shield layer, and the second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via a second exchange coupling function gap layer that is positioned between the second ferromagnetic layer and the lower shield layer.
摘要翻译： 通过有效地抑制对介质等的错误写入来防止记录介质劣化的磁阻效应元件包括以夹着磁阻效应的方式层叠形成的磁阻效应部分，上屏蔽层和下屏蔽层 部分来自上方和下方，并且处于与层叠方向施加感测电流的垂直于平面（CPP）结构的电流。 磁阻效应部分包括非磁性中间层，并且从上下屏蔽层和下屏蔽层上下夹着非磁性中间层的第一铁磁层和第二铁磁层具有倾斜的磁化结构，其中它们的磁化为 分别相对于轨道宽度方向倾斜，上屏蔽层和下屏蔽层的磁化相互大致正交，第一铁磁层经由第一交换耦合功能间隙层与上屏蔽层间接地磁耦合， 位于所述第一铁磁层和所述上屏蔽层之间，并且所述第二铁磁层经由位于所述第二铁磁层和所述下屏蔽层之间的第二交换耦合功能间隙层与所述下屏蔽层间接地磁耦合。
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公开(公告)号：US20220252449A1
公开(公告)日：2022-08-11
申请号：US17584859
申请日：2022-01-26
申请人： TDK CORPORATION
发明人： Naomichi DEGAWA
摘要： Provided are a light detection element, a receiving device, and a light sensor device. The light detection element includes a magnetic element that includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer is irradiated with light in a direction intersecting a stacking direction of the magnetic element.
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公开(公告)号：US20190304491A1
公开(公告)日：2019-10-03
申请号：US16364534
申请日：2019-03-26
申请人： TDK CORPORATION
发明人： Naomichi DEGAWA , Tsuyoshi SUZUKI
摘要： Provided is a magnetoresistance effect device comprising a magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer, and a high-frequency signal line. The high-frequency signal line includes an overlapping part disposed at a position overlapping the magnetoresistance effect element and a non-overlapping part disposed at a position not overlapping the magnetoresistance effect element in a plan view from a stacking direction. At least a part of the non-overlapping part is disposed below the overlapping part in the stacking direction, assuming that the overlapping part is above the magnetoresistance effect element in the stacking direction.
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公开(公告)号：US20160293188A1
公开(公告)日：2016-10-06
申请号：US14753301
申请日：2015-06-29
申请人： TDK Corporation
发明人： Naomichi DEGAWA , Kenzo MAKINO , Satoshi MIURA , Takayasu KANAYA
CPC分类号： G11B5/3912 , G01R33/098 , G11B5/3932 , G11B2005/3996
摘要： A magneto-resistive effect element (MR element) has a first shield layer; a second shield layer; an inner shield layer that is positioned between the first shield layer and the second shield layer, and that makes contact with the first shield layer and faces the air bearing surface (ABS); and a multilayer film that is positioned between the first shield layer and the second shield layer. The multilayer film has a free layer; a first pinned layer; a nonmagnetic spacer layer; a second pinned layer that fixes the magnetization direction of the first pinned layer; and an antiferromagnetic layer that is exchange-coupled with the second pinned layer. The antiferromagnetic layer faces the back surface of the inner shield layer viewed from the ABS. The MR element has an insulating layer positioned between the antiferromagnetic layer and the inner shield layer.
摘要翻译： 磁阻效应元件（MR元件）具有第一屏蔽层; 第二屏蔽层; 位于所述第一屏蔽层和所述第二屏蔽层之间并且与所述第一屏蔽层接触并面向所述空气轴承表面（ABS）的内屏蔽层; 以及位于所述第一屏蔽层和所述第二屏蔽层之间的多层膜。 多层膜具有自由层; 第一个固定层; 非磁性间隔层; 固定所述第一固定层的磁化方向的第二固定层; 以及与第二被钉扎层交换耦合的反铁磁层。 反铁磁层面对从ABS观察的内屏蔽层的后表面。 MR元件具有位于反铁磁层和内屏蔽层之间的绝缘层。
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公开(公告)号：US20210293909A1
公开(公告)日：2021-09-23
申请号：US17204465
申请日：2021-03-17
申请人： TDK CORPORATION
发明人： Naomichi DEGAWA , Tetsuya SHIBATA
IPC分类号： G01R33/09
摘要： A magnetoresistance effect device includes: at least one magnetoresistance effect element; at least one first signal line; and an output port, wherein the magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first signal line is separated from the magnetoresistance effect element with an insulator interposed therebetween and a high frequency magnetic field caused by a first high frequency current flowing through the first signal line is applied to the first ferromagnetic layer, wherein a high frequency current flows through the magnetoresistance effect element, and wherein a signal including a DC signal component caused by an output of the magnetoresistance effect element is output from the output port.
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公开(公告)号：US20190305215A1
公开(公告)日：2019-10-03
申请号：US16364865
申请日：2019-03-26
申请人： TDK CORPORATION
发明人： Naomichi DEGAWA
摘要： Provided is a magnetoresistance effect device comprising a magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer and a high-frequency signal line. The high-frequency signal line includes an overlapping part disposed at a position overlapping the magnetoresistance effect element and a non-overlapping part disposed at a position not overlapping the magnetoresistance effect element in a plan view from a stacking direction. At least a part of the non-overlapping part is formed to be thicker than at least a part of the overlapping part. A distance in the stacking direction between a virtual plane including a surface on the side of the overlapping part of the first ferromagnetic layer and a center line in the high-frequency signal line in the stacking direction is shorter in at least a part of the overlapping part than in at least a part of the non-overlapping part.
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公开(公告)号：US20190181332A1
公开(公告)日：2019-06-13
申请号：US16208191
申请日：2018-12-03
申请人： TDK CORPORATION
发明人： Naomichi DEGAWA
摘要： A magnetoresistance effect device includes: a magnetoresistance effect element formed by performing lamination such that a spacer layer is disposed between a first ferromagnetic layer and a second ferromagnetic layer; a high frequency signal line arranged on one side of the magnetoresistance effect element in a direction parallel to a lamination direction; and a magnetic member arranged at a position further away from the one side than the high frequency signal line when viewed from the magnetoresistance effect element, wherein the magnetic member has a concave portion which is recessed in a direction away from the high frequency signal line in a surface facing the high frequency signal line.
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公开(公告)号：US20190180901A1
公开(公告)日：2019-06-13
申请号：US16204502
申请日：2018-11-29
申请人： TDK CORPORATION
发明人： Akimasa KAIZU , Naomichi DEGAWA , Tetsuya ROPPONGI
摘要： At least one magnetoresistance effect element and a magnetic field applying unit to apply a magnetic field to the magnetoresistance effect element, the magnetic field applying unit includes a first ferromagnetic material having a portion protruding to the magnetoresistance effect element side in a stacking direction of the magnetoresistance effect element, a second ferromagnetic material sandwiching the magnetoresistance effect element with the first ferromagnetic material, and a coil wound around the first ferromagnetic material, a first magnetization free layer of the magnetoresistance effect element has a portion free of overlapping with at least one of a second surface of the protruding portion on the magnetoresistance effect element side and a third surface of the second ferromagnetic material on the magnetoresistance effect when viewed in the stacking direction, and a center of gravity of the first magnetization free layer, positioned in a region connecting the second surface and the third surface.
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公开(公告)号：US20190044500A1
公开(公告)日：2019-02-07
申请号：US16048034
申请日：2018-07-27
申请人： TDK CORPORATION
发明人： Naomichi DEGAWA , Takekazu YAMANE
CPC分类号： H03H11/04 , H01F10/3286 , H01F10/329 , H03F15/00 , H03H2/00 , H03H11/16
摘要： A magnetoresistance effect device includes a magnetoresistance effect element including a magnetization fixed layer, a magnetization free layer of which a direction of magnetization is changeable relative to a direction of magnetization of the fixed layer, and a spacer layer sandwiched between the fixed and free layers, a first signal line configured to generate a high frequency magnetic field when a high frequency current flows and apply the field to the magnetization free layer, and a DC application terminal configured to be capable of connecting a power supply for applying a DC current or voltage in a stacking direction of the element, and the element is disposed with respect to the terminal so the DC current flows from the fixed layer to the free layer in the element or so the DC voltage at which the magnetization fixed layer is higher in potential than the magnetization free layer is applied.
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