公开(公告)号：US20220250909A1

公开(公告)日：2022-08-11

申请号：US17729121

申请日：2022-04-26

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Luigi COLOMBO ,  Nazila DADVAND ,  Benjamin Stassen COOK ,  Archana VENUGOPAL

IPC: C01B21/064 ,  C23C16/34 ,  C23C18/32 ,  C23C18/16 ,  C23C18/36 ,  C23C18/28 ,  C23C18/30 ,  C23C18/20

Abstract: A microstructure comprises a plurality of interconnected units wherein the units are formed of hexagonal boron nitride (h-BN) tubes. The graphene tubes may be formed by photo-initiating the polymerization of a monomer in a pattern of interconnected units to form a polymer microlattice, removing unpolymerized monomer, coating the polymer microlattice with a metal, removing the polymer microlattice to leave a metal microlattice, depositing an h-BN precursor on the metal microlattice, converting the h-BN precursor to h-BN, and removing the metal microlattice.

公开(公告)号：US20190206793A1

公开(公告)日：2019-07-04

申请号：US16236101

申请日：2018-12-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Archana VENUGOPAL ,  Benjamin Stassen COOK ,  Nazila DADVAND ,  Luigi COLOMBO

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  C01B32/184

Abstract: A structure for a semiconductor device includes a dielectric layer and a metal layer. The structure also includes a plurality of unit cells. Each unit cell is formed of interconnected segments. The plurality of unit cells forms a lattice. The lattice is between the dielectric layer and the metal layer.