公开(公告)号：US20220093407A1

公开(公告)日：2022-03-24

申请号：US17542874

申请日：2021-12-06

Applicant: Tokyo Electron Limited

Inventor： Gen TAMAMUSHI

IPC: H01L21/3065 ,  H01J37/32 ,  B08B7/00 ,  H01L21/306

Abstract: A method for controlling an electrostatic attractor, which attracts an electrode to a gas plate provided in an upper portion of a plasma processing apparatus, includes, among a plasma generation period in which plasma is generated by the plasma processing apparatus and an idle period in which no plasma is generated by the plasma processing apparatus, applying voltages having polarities different from each other to first and second electrodes of the electrostatic attractor in at least the idle period.

公开(公告)号：US20210183622A1

公开(公告)日：2021-06-17

申请号：US17123130

申请日：2020-12-16

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Gen TAMAMUSHI ,  Masahiro INOUE

IPC: H01J37/32

Abstract: An apparatus, method, and non-transitory computer-readable medium reduces the power level of a reflected wave from a load coupled to a radio-frequency power supply. A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, a bias power supply, and a controller. The bias power supply periodically applies a pulsed negative voltage to the substrate support. The controller controls the radio-frequency power supply to provide radio-frequency power with a changed frequency within a period in which the pulsed negative voltage is applied from the bias power supply to the substrate support, to reduce a power level of a reflected wave from a load that is coupled to the radio-frequency power supply.

公开(公告)号：US20200312623A1

公开(公告)日：2020-10-01

申请号：US16834612

申请日：2020-03-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki MOYAMA ,  Kazuya NAGASEKI ,  Shinji HIMORI ,  Michishige SAITO ,  Gen TAMAMUSHI

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/67 ,  C23C16/455

Abstract: A substrate processing apparatus includes a processing chamber that accommodates a substrate, a gas supply having a gas diffusion chamber and a plurality of gas holes that communicates the gas diffusion chamber with the processing chamber, a gas inlet tube that introduces a gas into the gas diffusion chamber of the gas supply, and a gas source connected to the gas inlet tube and supplies the gas to the gas inlet tube. The gas supply has a volume variable device for changing a volume in the gas diffusion chamber.

公开(公告)号：US20200234930A1

公开(公告)日：2020-07-23

申请号：US16738369

申请日：2020-01-09

Applicant: Tokyo Electron Limited

Inventor： Gen TAMAMUSHI ,  Kazuya NAGASEKI ,  Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: An upper electrode for a plasma processing apparatus, includes an electrode having a gas discharge hole, a gas plate having a gas flow path formed at a position facing the gas discharge hole to supply a processing gas to the gas discharge hole, an electrostatic attraction part interposed between the electrode and the gas plate and having a contact surface that is in contact with a lower surface of the gas plate and an attraction surface that attracts an upper surface of the electrode, and a shield that shields radicals or gas moving from the gas discharge hole to a gap between the electrode and the gas plate.

公开(公告)号：US20190164726A1

公开(公告)日：2019-05-30

申请号：US16201659

申请日：2018-11-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Gen TAMAMUSHI ,  Naoyuki SATOH ,  Akihiro YOKOTA ,  Shinji HIMORI

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a processing chamber in which plasma is generated, and a protection target member which is provided in the processing chamber and needs to be protected from consumption by the plasma. The protection target member is made of a material having a property of integrating radicals and/or anions or a protective layer containing the material is provided on a surface of the protection target member.