公开(公告)号：US20210319988A1

公开(公告)日：2021-10-14

申请号：US17228222

申请日：2021-04-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki MOYAMA ,  Kazuya NAGASEKI

IPC: H01J37/32

Abstract: A substrate support stage includes a substrate mounting surface on which a substrate is mounted and a ring mount on which an edge ring is mounted. The edge ring is disposed so as to surround the substrate mounted on the substrate mounting surface. The ring mount is provided with a plurality of gas ejection ports configured to eject a gas toward a lower surface side of the edge ring to levitate the edge ring while the edge ring is being mounted on the ring mount, thereby allowing the gas to flow out from a gap between inner and outer peripheries of the lower surface side of the edge ring and the ring mount.

公开(公告)号：US20210296102A1

公开(公告)日：2021-09-23

申请号：US17342668

申请日：2021-06-09

Applicant: Tokyo Electron Limited

Inventor： Kazuya NAGASEKI ,  Kazuki MOYAMA ,  Toshiya MATSUDA ,  Naokazu FURUYA ,  Tatsuro OHSHITA

IPC: H01J37/32 ,  H01L21/673 ,  C23C16/44 ,  C23C16/52 ,  C23C16/455 ,  H01L21/67

Abstract: An exhaust device including an exhaust mechanism and an exhaust unit is provided. The exhaust mechanism includes a first blade unit and a second blade unit provided in an exhaust space of a processing vessel including a processing space of a vacuum atmosphere for applying a process to a workpiece. The first blade unit and the second blade unit are arranged coaxially with a periphery of the workpiece, and at least one of the first blade unit and the second blade unit is rotatable. The exhaust unit is provided at a downstream side of the exhaust mechanism and communicates with the exhaust space. The exhaust unit is configured to exhaust gas in the processing vessel.

公开(公告)号：US20190252157A1

公开(公告)日：2019-08-15

申请号：US16270811

申请日：2019-02-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki MOYAMA ,  Kazuya NAGASEKI

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/32449 ,  H01J37/32834 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: A plasma processing system includes a chamber, a gas supply unit, a gas exhaust unit, a separating unit, a boost unit and an accumulation unit. The chamber is configured to process a target substrate by plasma of a gaseous mixture of a rare gas and a processing gas. The gas supply unit is configured to supply the rare gas and the processing gas into the chamber. The gas exhaust unit is configured to exhaust a gas containing the rare gas from the chamber. The separating unit is configured to separate the rare gas from the gas exhausted by the gas exhaust unit. The boost unit is configured to boost the rare gas separated by the separating unit. The accumulation unit is configured to accumulate the rare gas boosted by the boost unit and supply the accumulated first rare gas to the gas supply unit.

公开(公告)号：US20240047184A1

公开(公告)日：2024-02-08

申请号：US18359163

申请日：2023-07-26

Applicant: Tokyo Electron Limited

Inventor： Kazuki MOYAMA ,  Yuzuru SAKAI

IPC: H01J37/32

CPC classification number: H01J37/32834 ,  H01J37/32633 ,  H01J37/32715 ,  H01J2237/024

Abstract: A plasma processing apparatus includes a plasma processing chamber; a substrate support disposed in the plasma processing chamber; a movable member and a stationary member each disposed around the substrate support, the movable member having a plurality of moving blades, the plurality of moving blades being rotatable, the stationary member having a plurality of stationary blades, the plurality of moving blades and the plurality of stationary blades being alternately disposed along a height direction of the plasma processing chamber, and an exhaust space being formed beneath the movable member and the stationary member; a first driver configured to rotate the movable member; a pressure regulating member movably disposed around the substrate support and above the movable member and the stationary member; and a second driver configured to move the pressure regulating member.

公开(公告)号：US20210398783A1

公开(公告)日：2021-12-23

申请号：US17352383

申请日：2021-06-21

Applicant: Tokyo Electron Limited

Inventor： Kazuki MOYAMA

IPC: H01J37/32 ,  H01L21/687

Abstract: A plasma processing apparatus includes a processing chamber, a support in the processing chamber to support an edge ring assembly that includes a heat transfer sheet that is attached to an edge ring, and the edge ring surrounding the substrate supported by support, and a delivery structure for vertically moving and transferring the edge ring assembly between the plasma processing apparatus and the pressure-reducible transfer apparatus. The transfer apparatus includes a pressure-reducible transfer chamber connected to the processing chamber, and a transferer for transferring the edge ring assembly. Without exposing the processing chamber to the atmosphere, the transferer supports the heat transfer sheet and moves the edge ring assembly to a position above the support, the delivery structure receives the edge ring assembly from the transferer and supports the heat transfer sheet, and the support receives the edge ring assembly to support the edge ring via the heat transfer sheet.

公开(公告)号：US20210375592A1

公开(公告)日：2021-12-02

申请号：US17394783

申请日：2021-08-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki MOYAMA ,  Kazuya NAGASEKI

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

Abstract: A plasma processing system includes a chamber, a gas supply unit, a gas exhaust unit, a separating unit, a boost unit and an accumulation unit. The chamber is configured to process a target substrate by plasma of a gaseous mixture of a rare gas and a processing gas. The gas supply unit is configured to supply the rare gas and the processing gas into the chamber. The gas exhaust unit is configured to exhaust a gas containing the rare gas from the chamber. The separating unit is configured to separate the rare gas from the gas exhausted by the gas exhaust unit. The boost unit is configured to boost the rare gas separated by the separating unit. The accumulation unit is configured to accumulate the rare gas boosted by the boost unit and supply the accumulated first rare gas to the gas supply unit.

公开(公告)号：US20240194459A1

公开(公告)日：2024-06-13

申请号：US18416880

申请日：2024-01-18

Applicant: Tokyo Electron Limited

Inventor： Kazuya NAGASEKI ,  Kazuki MOYAMA ,  Shinji HIMORI ,  Masanobu HONDA ,  Satoru TERUUCHI

IPC: H01J37/32

CPC classification number: H01J37/32724

Abstract: A processing method and corresponding device for performing plasma processing on a substrate includes placing a temperature adjustment target onto a support surface of a substrate support in a processing chamber being decompressible, forming a heat transfer layer for the temperature adjustment target on the support surface of the substrate support, and performing plasma processing on the substrate on the support surface on which the heat transfer layer is formed. The heat transfer layer is deformable and includes at least one of a liquid layer or a deformable solid layer.

公开(公告)号：US20170133204A1

公开(公告)日：2017-05-11

申请号：US15345106

申请日：2016-11-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki MOYAMA ,  Toyohiro KAMADA ,  Hiroyuki IKUTA ,  Yuya MINOURA

IPC: H01J37/32 ,  C23C16/50

Abstract: There is provided a member for a plasma processing apparatus, the member constituting the plasma processing apparatus configured to generate plasma in a processing space of a processing container and to perform plasma processing on an object to be processed. The member includes a face of the member exposed to the plasma and coated with a protection film. The protection film includes a columnar structure having a plurality of column-shaped portions in substantially cylindrical shapes extending in a thickness direction of the film. The plurality of column-shaped portions is adjacent to one another without gaps therebetween.

公开(公告)号：US20170125261A1

公开(公告)日：2017-05-04

申请号：US15333323

申请日：2016-10-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryo MIYAMA ,  Kazuki MOYAMA ,  Toshihisa NOZAWA

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/31122 ,  H01J37/3244 ,  H01J2237/3345 ,  H01L21/02244 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/67069 ,  H01L43/12

Abstract: Disclosed is a method of anisotropically etching a transition metal film using a substrate processing apparatus including at least one processing container configured to perform a processing on a workpiece including the transition metal film. The method includes an oxidation step of introducing a first gas containing an oxygen ion into the processing container and irradiating the transition metal film with the oxygen ion to oxidize a transition metal of the transition metal film, thereby forming a metal oxide layer; and a complexation/etching step of introducing a second gas for complexation of the metal oxide layer into the processing container and forming a metal complex in the metal oxide layer, thereby performing an etching.

公开(公告)号：US20240128057A1

公开(公告)日：2024-04-18

申请号：US18398213

申请日：2023-12-28

Applicant: Tokyo Electron Limited

Inventor： Kazuki MOYAMA ,  Nobuyuki NAGAYAMA ,  Mamoru MIURA

IPC: H01J37/32

CPC classification number: H01J37/32477 ,  H01J37/32715 ,  H01J37/32807

Abstract: A consumable member includes a core portion formed of the material having a first purity; and a protection portion provided at a portion worn out by plasma in the plasma processing apparatus around the core portion, and formed of the material having a second purity higher than the first purity. The material may be either quartz or ceramic.