公开(公告)号：US20240222078A1

公开(公告)日：2024-07-04

申请号：US18607327

申请日：2024-03-15

Applicant: Tokyo Electron Limited

Inventor： Gen TAMAMUSHI

IPC: H01J37/32

CPC classification number: H01J37/32155 ,  H01J37/32091 ,  H01J37/32926 ,  H01J37/3299 ,  H01J2237/24564

Abstract: In a plasma processing apparatus, electrical bias energy is provided from a bias power supply to a substrate support. Source radio-frequency power is provided from a radio-frequency power supply to a radio-frequency electrode through a feed line. A phase period having a minimum value of a power level of a reflected wave of the source radio-frequency power is identified from a plurality of phase periods in a bias cycle of the electrical bias energy. A reference value being a phase difference between a voltage and a current on the feed line in the identified phase period is determined. A source frequency of the source radio-frequency power is controlled for each phase period based on a result of comparison between the reference value and the phase difference between the voltage and the current on the feed line in a corresponding phase period of the plurality of phase periods.

公开(公告)号：US20210287883A1

公开(公告)日：2021-09-16

申请号：US17189858

申请日：2021-03-02

Applicant: Tokyo Electron Limited

Inventor： Gen TAMAMUSHI

IPC: H01J37/32 ,  H02N13/00

Abstract: A first electrostatic chuck of a substrate support of the disclosed plasma processing apparatus has first and second electrodes and holds an edge ring. A second electrostatic chuck of the substrate support holds a substrate. The first electrode extends closer to the second electrostatic chuck than the second electrode. During plasma processing, a first voltage having a positive polarity is applied to the first and second electrodes. In a first period after the plasma processing, a second voltage having a negative polarity is applied to the first and second electrodes. In a second period after the first period, a third voltage having a positive polarity is applied to the first electrode, and a fourth voltage having a negative polarity is applied to the second electrode. The absolute value of the third voltage is smaller than the absolute value of the first voltage and the absolute value of the second voltage.

公开(公告)号：US20240355584A1

公开(公告)日：2024-10-24

申请号：US18761386

申请日：2024-07-02

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Gen TAMAMUSHI ,  Masahiro INOUE

IPC: H01J37/32

CPC classification number: H01J37/32155 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/32715

Abstract: An apparatus, method, and non-transitory computer-readable medium reduces the power level of a reflected wave from a load coupled to a radio-frequency power supply. A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, a bias power supply, and a controller. The bias power supply periodically applies a pulsed negative voltage to the substrate support. The controller controls the radio-frequency power supply to provide radio-frequency power with a changed frequency within a period in which the pulsed negative voltage is applied from the bias power supply to the substrate support, to reduce a power level of a reflected wave from a load that is coupled to the radio-frequency power supply.

公开(公告)号：US20240153742A1

公开(公告)日：2024-05-09

申请号：US18412218

申请日：2024-01-12

Applicant: Tokyo Electron Limited

Inventor： Gen TAMAMUSHI

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32128 ,  H01J37/32165 ,  H01J37/32183 ,  H01J2237/327 ,  H01J2237/334

Abstract: A plasma processing method according to the present disclosure includes disposing a substrate on a substrate support, supplying, into a chamber, a processing gas for processing the substrate, generating, in the chamber, a plasma from the processing gas by using a first RF signal and a second RF signal, and applying a bias signal to the substrate support, and generating the plasma includes superimposing the second RF signal on the first RF signal based on a timing when the bias signal is applied to the substrate support.

公开(公告)号：US20200234931A1

公开(公告)日：2020-07-23

申请号：US16741875

申请日：2020-01-14

Applicant: Tokyo Electron Limited

Inventor： Gen TAMAMUSHI

IPC: H01J37/32 ,  B08B7/00

Abstract: A method for controlling an electrostatic attractor, which attracts an electrode to a gas plate provided in an upper portion of a plasma processing apparatus, includes, among a plasma generation period in which plasma is generated by the plasma processing apparatus and an idle period in which no plasma is generated by the plasma processing apparatus, applying voltages having polarities different from each other to first and second electrodes of the electrostatic attractor in at least the idle period.

公开(公告)号：US20240170258A1

公开(公告)日：2024-05-23

申请号：US18426925

申请日：2024-01-30

Applicant: Tokyo Electron Limited

Inventor： Gen TAMAMUSHI

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32165 ,  H01J37/32935

Abstract: A plasma processing system includes a first RF signal generator configured to generate a first RF signal, a first matching circuit coupled to the first RF signal generator, a second RF signal generator configured to generate a second RF signal, a second matching circuit coupled to the second RF signal generator, a first plasma processing apparatus coupled to the first matching circuit and to the second matching circuit, the first RF signal being supplied to the first plasma processing apparatus, and the second RF signal being supplied to the first plasma processing apparatus, and a second plasma processing apparatus coupled to the first matching circuit, the first RF signal being supplied to the second plasma processing apparatus, and the second RF signal of which the phase is shifted being supplied to the second plasma processing apparatus.

公开(公告)号：US20230369019A1

公开(公告)日：2023-11-16

申请号：US18227370

申请日：2023-07-28

Applicant: Tokyo Electron Limited

Inventor： Gen TAMAMUSHI ,  Chishio KOSHIMIZU ,  Masahiro INOUE ,  Shoichiro MATSUYAMA

IPC: H01J37/32

CPC classification number: H01J37/32137 ,  H01J37/3299 ,  H01J37/32183 ,  H01J2237/327

Abstract: A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, and a bias power supply controller. The radio-frequency power supply generates source radio-frequency power to generate plasma in the chamber. The bias power supply periodically provides bias energy having a waveform cycle to a bias electrode on the substrate support. The radio-frequency power supply adjusts a source frequency of the source radio-frequency power in an n-th phase period in an m-th waveform cycle of a plurality of waveform cycles based on a change in a degree of reflection of the source radio-frequency power. The change in the degree of reflection is identified with the source frequency being set differently in the n-th phase period in each of two or more waveform cycles preceding the m-th waveform cycle.

公开(公告)号：US20230094655A1

公开(公告)日：2023-03-30

申请号：US17951579

申请日：2022-09-23

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Gen TAMAMUSHI ,  Masahiro INOUE ,  Yuto KOSAKA ,  Shoichiro MATSUYAMA

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a chamber; a substrate support provided in the chamber; a bias power supply that supplies an electrical bias energy to an electrode of the substrate support; a matching box including a matching circuit; a radio-frequency power supply that supplies a radio-frequency power having a variable frequency into the chamber through the matching box, and adjusts the frequency of the radio-frequency power in each of a plurality of phase periods within the cycle of the electrical bias energy; a sensor that detects an electrical signal reflecting a deviation of a load impedance of the radio-frequency power supply from a matching state; and a filter that generates a filtered signal by removing and an intermodulation distortion component of the radio-frequency power and the electrical bias energy from the electrical signal in each of the plurality of phase periods.

公开(公告)号：US20190148155A1

公开(公告)日：2019-05-16

申请号：US16183945

申请日：2018-11-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinji KUBOTA ,  Kazuya NAGASEKI ,  Akihiro YOKOTA ,  Gen TAMAMUSHI

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32

Abstract: In a substrate processing method, electrons having a first energy are supplied from an electron beam generator into an inner space of a chamber body of a substrate processing apparatus to generate negative ions by attaching the electrons to molecules in a processing gas supplied to the inner space. Then a positive bias voltage is applied to an electrode of a supporting table that supports a substrate mounted on thereon in the inner space to attract the negative ions to the substrate.

公开(公告)号：US20220406568A1

公开(公告)日：2022-12-22

申请号：US17846734

申请日：2022-06-22

Applicant: Tokyo Electron Limited

Inventor： Gen TAMAMUSHI

IPC: H01J37/32

Abstract: A plasma processing method for plasma-processing a substrate with a plasma processing apparatus having a substrate support and an upper electrode inside a chamber, the method comprising: placing the substrate on the substrate support; supplying a processing gas for processing the substrate to the chamber; supplying a radio frequency to the upper electrode or the substrate support to generate plasma from the processing gas inside the chamber; periodically applying a first pulse voltage to the substrate support in a first cycle during a period in which the radio frequency is being supplied; and periodically applying a second pulse voltage to the upper electrode in a second cycle during the period in which the radio frequency is being supplied.