公开(公告)号：US20200243683A1

公开(公告)日：2020-07-30

申请号：US16851728

申请日：2020-04-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shahaji B. MORE ,  Zheng-Yang PAN ,  Chun-Chieh WANG ,  Cheng-Han LEE ,  Shih-Chieh CHANG

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/267 ,  H01L29/36 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/165 ,  H01L29/417

Abstract: A method for forming a semiconductor device is provided. The method includes forming a gate stack to partially cover a semiconductor structure. The method also includes forming a first semiconductor material over the semiconductor structure. The method further includes forming a second semiconductor material over the first semiconductor material. In addition, the method includes forming a third semiconductor material over the second semiconductor material. The first semiconductor material and the third semiconductor material together surround the second semiconductor material. The second semiconductor material has a greater dopant concentration than that of the first semiconductor material or that of the third semiconductor material.

公开(公告)号：US20190165175A1

公开(公告)日：2019-05-30

申请号：US15922681

申请日：2018-03-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shahaji B. MORE ,  Huai-Tei YANG ,  Shih-Chieh CHANG ,  Shu KUAN ,  Cheng-Han LEE

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/66

Abstract: In certain embodiments, a semiconductor device includes a substrate having an n-doped well feature and an epitaxial silicon germanium fin formed over the n-doped well feature. The epitaxial silicon germanium fin has a lower part and an upper part. The lower part has a lower germanium content than the upper part. A channel is formed from the epitaxial silicon germanium fin. A gate is formed over the epitaxial silicon germanium fin. A doped source-drain is formed proximate the channel.

公开(公告)号：US20190096997A1

公开(公告)日：2019-03-28

申请号：US15719046

申请日：2017-09-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shahaji B. MORE ,  Huai-Tei YANG ,  Zheng-Yang PAN ,  Shih-Chieh CHANG ,  Chun-Chieh WANG ,  Cheng-Han LEE

IPC: H01L29/10 ,  H01L21/8238 ,  H01L21/74 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/308 ,  H01L27/092 ,  H01L29/06

Abstract: The present disclosure describes an exemplary method to form p-type fully strained channel (PFSC) or an n-type fully strained channel (NFSC) that can mitigate epitaxial growth defects or structural deformations in the channel region due to processing. The exemplary method can include (i) two or more surface pre-clean treatment cycles with nitrogen trifluoride (NF3) and ammonia (NH3) plasma, followed by a thermal treatment; (ii) a prebake (anneal); and (iii) a silicon germanium epitaxial growth with a silicon seed layer, a silicon germanium seed layer, or a combination thereof.