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公开(公告)号：US20180130802A1
公开(公告)日：2018-05-10
申请号：US15348652
申请日：2016-11-10
IPC分类号： H01L27/092 , H01L29/06 , H01L29/165 , H01L29/423 , H01L29/78
CPC分类号： H01L27/0928 , H01L21/823807 , H01L21/823821 , H01L27/0924 , H01L29/0649 , H01L29/165 , H01L29/42364 , H01L29/7851
摘要： A fin field effect transistor (FinFET) device structure and method for forming the same are provided. The FinFET device structure includes a fin structure extending above a substrate, and the fin structure has a first portion and a second portion below the first portion, and the first portion and the second portion are made of different materials. The FinFET device structure includes an isolation structure formed on the substrate, and an interface between the first portion and the second portion of the fin structure is above a top surface of the isolation structure. The FinFET device structure includes a liner layer formed on sidewalls of the second portion of the fin structure.
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公开(公告)号：US20180108775A1
公开(公告)日：2018-04-19
申请号：US15292428
申请日：2016-10-13
IPC分类号： H01L29/78 , H01L29/08 , H01L29/267 , H01L29/36 , H01L29/417 , H01L27/092 , H01L21/8238 , H01L29/66
CPC分类号： H01L29/7848 , H01L21/823418 , H01L21/823814 , H01L27/092 , H01L29/0847 , H01L29/267 , H01L29/36 , H01L29/41783 , H01L29/66636
摘要： Structures of a semiconductor device are provided. The semiconductor device includes a substrate, a gate structure over the substrate, and a first recess and a second recess in the substrate and at opposite sides of the gate structure. The semiconductor device also includes two source/drain structures over the first recess and the second recess respectively. At least one of the source/drain structures includes a first doped region partially filling in the first recess, a second doped region over the first doped region, and a third doped region over the second doped region. The second doped region contains more dopants than the first doped region or the third doped region.
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公开(公告)号：US20220149157A1
公开(公告)日：2022-05-12
申请号：US17582727
申请日：2022-01-24
发明人： Shahaji B. MORE , Huai-Tei YANG , Zheng-Yang PAN , Shih-Chieh CHANG , Chun-Chieh WANG , Cheng-Han LEE
IPC分类号： H01L29/10 , H01L21/8238 , H01L21/02 , H01L21/74 , H01L21/308 , H01L27/092 , H01L29/66 , H01L21/3065 , H01L29/78 , H01L29/06
摘要： The present disclosure describes an exemplary fin structure formed on a substrate. The disclosed fin structure comprises an n-type doped region formed on a top portion of the substrate, a silicon epitaxial layer on the n-type doped region, and an epitaxial stack on the silicon epitaxial layer, wherein the epitaxial stack comprises a silicon-based seed layer in physical contact with the silicon epitaxial layer. The fin structure can further comprise a liner surrounding the n-type doped region, and a dielectric surrounding the liner.
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公开(公告)号：US20190148552A1
公开(公告)日：2019-05-16
申请号：US16231719
申请日：2018-12-24
IPC分类号： H01L29/78 , H01L29/417 , H01L29/165 , H01L29/66 , H01L21/8234 , H01L27/092 , H01L29/36 , H01L29/267 , H01L29/08 , H01L21/8238
摘要： A method for forming a semiconductor device is provided. The method includes forming a gate stack to partially cover a semiconductor structure. The method also includes forming a first semiconductor material over the semiconductor structure. The method further includes forming a second semiconductor material over the first semiconductor material. In addition, the method includes forming a third semiconductor material over the second semiconductor material. The first semiconductor material and the third semiconductor material together surround the second semiconductor material. The second semiconductor material has a greater dopant concentration than that of the first semiconductor material or that of the third semiconductor material.
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公开(公告)号：US20180294357A1
公开(公告)日：2018-10-11
申请号：US16004727
申请日：2018-06-11
IPC分类号： H01L29/78 , H01L29/66 , H01L21/8238 , H01L27/092 , H01L29/417 , H01L21/8234 , H01L29/267 , H01L29/08 , H01L29/36
CPC分类号： H01L29/7848 , H01L21/823418 , H01L21/823814 , H01L27/092 , H01L29/0847 , H01L29/165 , H01L29/267 , H01L29/36 , H01L29/41783 , H01L29/665 , H01L29/66636 , H01L29/7834
摘要： Structures and formation methods of a semiconductor device are provided. The semiconductor device structure includes a substrate and a gate structure over the substrate. The semiconductor device structure also includes a source/drain structure near the gate structure. The source/drain structure has an inner portion and an outer portion surrounding an entirety of the inner portion. The inner portion has a greater average dopant concentration than that of the outer portion.
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公开(公告)号：US20180151357A1
公开(公告)日：2018-05-31
申请号：US15399143
申请日：2017-01-05
发明人： Shahaji B. MORE , Zheng-Yang PAN , Cheng-Han LEE , Shih-Chieh CHANG , Chandrashekhar Prakash SAVANT
IPC分类号： H01L21/02 , H01L21/8238 , H01L27/092 , H01L29/41 , H01L29/786 , H01L29/10 , H01L29/66
CPC分类号： H01L21/02603 , H01L21/02524 , H01L21/02529 , H01L21/02532 , H01L21/02639 , H01L21/02653 , H01L21/8238 , H01L27/092 , H01L29/1037 , H01L29/1054 , H01L29/413 , H01L29/66227 , H01L29/66742 , H01L29/78696
摘要： Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a substrate, a first source portion and a first drain portion over the substrate, and a first semiconductor nanowire over the substrate and between the first source portion and the first drain portion. The first semiconductor nanowire includes a first portion over the substrate and a second portion over the first portion, and the first portion has a first width, and the second portion has a second width, and the second width is less than the first width. The semiconductor device structure also includes a first gate structure over the second portion of the first semiconductor nanowire.
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公开(公告)号：US20170213759A1
公开(公告)日：2017-07-27
申请号：US15007041
申请日：2016-01-26
发明人： Chih-Yu MA , Yii-Chi LIN , Zheng-Yang PAN , Chia-Chiung LO
IPC分类号： H01L21/687 , H01L21/66 , H01L21/324 , H01L21/67
CPC分类号： H01L21/68785 , H01L21/324 , H01L21/67115 , H01L21/67248 , H01L21/68757 , H01L21/68792 , H01L22/20
摘要： A wafer supporting structure in semiconductor manufacturing, and a device and a method for manufacturing semiconductor are provided. In accordance with some embodiments of the instant disclosure, a wafer supporting structure in semiconductor manufacturing includes a transparent ring and at least two arms. The arms are connected to the transparent ring.
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公开(公告)号：US20210359111A1
公开(公告)日：2021-11-18
申请号：US17109895
申请日：2020-12-02
发明人： Ya-Wen CHIU , Yi Che CHAN , Lun-Kuang TAN , Zheng-Yang PAN , Cheng-Po CHAU , Pin-Ju LIANG , Hung-Yao CHEN , De-Wei YU , Yi-Cheng LI
IPC分类号： H01L29/66 , H01L27/092 , H01L29/78 , H01L29/161 , H01L29/10 , H01L21/02 , H01L21/8238
摘要： In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.
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公开(公告)号：US20200243683A1
公开(公告)日：2020-07-30
申请号：US16851728
申请日：2020-04-17
IPC分类号： H01L29/78 , H01L29/08 , H01L29/267 , H01L29/36 , H01L27/092 , H01L21/8238 , H01L29/66 , H01L21/8234 , H01L29/165 , H01L29/417
摘要： A method for forming a semiconductor device is provided. The method includes forming a gate stack to partially cover a semiconductor structure. The method also includes forming a first semiconductor material over the semiconductor structure. The method further includes forming a second semiconductor material over the first semiconductor material. In addition, the method includes forming a third semiconductor material over the second semiconductor material. The first semiconductor material and the third semiconductor material together surround the second semiconductor material. The second semiconductor material has a greater dopant concentration than that of the first semiconductor material or that of the third semiconductor material.
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公开(公告)号：US20200152742A1
公开(公告)日：2020-05-14
申请号：US16741607
申请日：2020-01-13
发明人： Shahaji B. More , Huai-Tei YANG , Zheng-Yang PAN , Shih-Chieh CHANG , Chun-Chieh WANG , Cheng-Han Lee
IPC分类号： H01L29/10 , H01L21/8238 , H01L29/06 , H01L27/092 , H01L21/308 , H01L21/3065 , H01L21/02 , H01L21/74 , H01L29/78 , H01L29/66
摘要： The present disclosure describes an exemplary method to form p-type fully strained channel (PFSC) or an n-type fully strained channel (NFSC) that can mitigate epitaxial growth defects or structural deformations in the channel region due to processing. The exemplary method can include (i) two or more surface pre-clean treatment cycles with nitrogen trifluoride (NF3) and ammonia (NH3) plasma, followed by a thermal treatment; (ii) a prebake (anneal); and (iii) a silicon germanium epitaxial growth with a silicon seed layer, a silicon germanium seed layer, or a combination thereof.
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