公开(公告)号：US20200331038A1

公开(公告)日：2020-10-22

申请号：US16388387

申请日：2019-04-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shang-Ying WU ,  Ming-Hsun TSAI ,  Sheng-Kang YU ,  Yung-Teng YU ,  Chi YANG ,  Shang-Chieh CHIEN ,  Chia-Chen CHEN ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: B08B7/04 ,  H05G2/00 ,  B08B5/04 ,  B08B7/00 ,  B08B3/08 ,  B08B3/10

Abstract: Debris is removed from a collector of an extreme ultraviolet light source vessel by applying a suction force through a vacuum opening of a cable. The method for removing debris also includes weakening debris attachment by using a sticky surface or by spreading a solution through a nozzle, wherein the sticky surface and the nozzle are arranged on the cable proximal to the vacuum opening. A borescope system and interchangeable rigid portions of the cable assists in targeting a target area of the collector where the debris is.

公开(公告)号：US20190033225A1

公开(公告)日：2019-01-31

申请号：US15883971

申请日：2018-01-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis CHANG ,  Shang-Chieh CHIEN ,  Shang-Ying WU ,  Li-Kai CHENG ,  Tzung-Chi FU ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG ,  Anthony YEN ,  Chia-Chen CHEN

IPC: G01N21/88 ,  G03F7/20 ,  H01L21/027 ,  G01N21/94 ,  G01N21/956

CPC classification number: G01N21/8806 ,  G01N21/94 ,  G01N21/954 ,  G01N21/95623 ,  G03F7/2037 ,  G03F7/70033 ,  G03F7/70166 ,  G03F7/70175 ,  G03F7/70916 ,  H01L21/0275

Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.

公开(公告)号：US20180376575A1

公开(公告)日：2018-12-27

申请号：US15801225

申请日：2017-11-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shang-Chieh CHIEN ,  Po-Chung CHENG ,  Chia-Chen CHEN ,  Jen-Yang CHUNG ,  Li-Jui CHEN ,  Tzung-Chi FU ,  Shang-Ying WU

IPC: H05G2/00 ,  G03F7/20

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.